Internal connection structure of semiconductor device and manufacturing method of internal connection structure

Abstract

The invention provides an internal connection structure of a semiconductor device and a manufacturing method of the internal connection structure. The manufacturing method includes the steps of forming a first medium layer on the substrate structure and covering a first layer interconnecting wire in the process of forming the inner connecting layer, wherein the first medium layer is attached to the side wall of the first layer interconnecting wire and grows in the direction away from the side wall of the first layer interconnecting wire to partially fill the interval region in a non-filling mode, so that a first air gap is formed in the first medium layer in the interval region, and the first air gap is sealed in the first medium layer; opening the first air gap to form a plurality of opengrooves between the first layer interconnecting wires, and expanding the space size of the grooves; forming a second medium layer on the first medium layer, covering the upper notch of the grooves bythe second medium layer to seal the open slot to form a second air gap, wherein the space enclosed by the second air gap is larger than the space enclosed by the first air gap, so that an air gap with a larger size can be formed between every two adjacent interconnecting wires to realize effective and reliable isolation between the interconnecting wires.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an interconnection structure of a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor integrated circuit technology, interconnection structures for connecting semiconductor devices are more and more widely used. The interconnection structures mainly include interconnection lines and dielectric layers for isolating the interconnection lines. The continuous reduction in the size of semiconductor devices and the size of interconnection lines leads to the gradual reduction of the spacing between interconnection lines, which in turn causes the part of the dielectric layer between the interconnection lines to become smaller and smaller, which often leads to interconnection Crosstalk occurs between wires. At present, by reducing the dielectric constant of the dielectric layer, this c...

AI Technical Summary

Problems solved by technology

The continuous reduction in the size of semiconductor devices and the size of interconnection lines leads to the gradual reduction of the spacing between interconnection lines, which in turn causes the part of the dielectric layer between the interconnection lines to become smaller and smaller, which often leads to interconnection crosstalk between wires

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