Selective wet etching of metal nitrides

A wet etching, nitride technology, applied in the direction of chemical instruments and methods, surface etching compositions, electrical components, etc., can solve the lack of selectivity, loss of photoresist coated substrate adhesion, less acceptance, etc. question

Inactive Publication Date: 2008-08-20
SACHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] A longstanding problem with the use of these standard, conventional wet etchants is their lack of selectivity
These wet etchants often attack surrounding structures, resulting in etching, or especially in the case of some photoresists, increased and / or loss of adhesion of the photoresist-coated substrate
As critical dimensions continue to be reduced, this lack of selectivity becomes less and less acceptable

Method used

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  • Selective wet etching of metal nitrides
  • Selective wet etching of metal nitrides
  • Selective wet etching of metal nitrides

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Embodiment Construction

[0017] A "composition" as used herein includes a mixture of materials including the composition as well as products formed from reactions between or decomposition of materials comprising the composition.

[0018] As is known in the art, although not directly related, generally in wet etching, as the etch rate increases, the etch selectivity decreases. While it is important to achieve high etch rates to maintain productivity, it is equally or more important to achieve high selectivity. Thus, there is a need to balance these two desirable properties. Accordingly, the present invention provides a wet etch composition that is effective on metal nitrides relative to surrounding structures such as photoresist, glass, polycrystalline and monocrystalline silicon, silicon oxide, silicon nitride, and other materials. A good balance is maintained between the etch rate and etch selectivity.

[0019] wet etching composition

[0020] According to an embodiment of the present invention, t...

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Abstract

In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, BPSG, BSG, silicon oxynitride, silicon nitride and silicon oxycarbide and combinations and mixtures thereof and/or photoresist materials, including steps of providing a wet etching composition including hydrogen peroxide, an organic onium hydroxide, and an organic acid; and exposing a metal nitride to be etched with the wet etching composition for a time and at a temperature effective to etch the metal nitride selectively to the surrounding structures.

Description

technical field [0001] The present invention relates to the wet etching of metal nitrides, such as titanium, tungsten, tantalum, hafnium and zirconium nitrides and mixtures thereof, for materials such as glass, BPSG, BSG, silicon dioxide, silicon nitride and photoresist The surrounding structure formed by the agent is selective. Background technique [0002] Lithography generally consists of the following steps. First, a photoresist (PR) material is coated onto the surface of the wafer by a suitable method such as spin coating. Then, the PR layer is selectively exposed to radiation such as ultraviolet light, electrons, or X-rays, wherein the exposed area is defined by an exposure tool, a mask, or computer data. After exposure, the PR layer is developed, which destroys the unwanted parts of the PR layer. area, thereby exposing the corresponding area of ​​the underlying layer. Depending on the resist type, the developing stage may destroy exposed or unexposed areas. Then, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213
CPCH01L21/32134C09K13/06C09K13/00C09K13/02H01L21/3063
Inventor 威廉·A·沃伊特恰克迪安·德维尔夫
Owner SACHEM INC
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