ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof

A multi-quantum well and ultraviolet laser technology is applied in the field of laser diodes and their preparation to achieve the effects of improving crystal quality, good lattice matching, and realizing industrialized production

Active Publication Date: 2010-11-17
常熟紫金知识产权服务有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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There is no report on ZnO/ZnMgO multi-quantum well ultraviol

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  • ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof
  • ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof
  • ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof

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Embodiment 1

[0026] 1. Substrate cleaning: Use n-type GaN grown on sapphire as the substrate, cut it into a size of 15mm×15mm, ultrasonically clean it with acetone, alcohol, and deionized water for 3 minutes, and finally dry it with a nitrogen gun.

[0027] 2. ZnO / Zn 1-x Mg x O Growth of multi-quantum well active layer: put the substrate after surface cleaning into the growth chamber of the radio frequency magnetron sputtering system, and the growth chamber is evacuated to the background pressure of 5×10 -4 Pa, heating the substrate to a temperature of 250°C. ZnO ceramic target is selected as the target material for depositing ZnO potential well layer, and a mixed target material of Mg metal target and ZnO ceramic target is selected as the target material for depositing ZnO potential well layer. 1-x Mg x The target material of the O barrier layer, wherein the area ratio of the Mg metal target and the ZnO ceramic target is 2:3, the Zn 1-x Mg x x=0.1 in the O layer. Before coating, pre...

Embodiment 2

[0032] 1. Substrate cleaning: Use n-type GaN grown on sapphire as the substrate, cut it into a size of 15mm×15mm, ultrasonically clean it with acetone, alcohol, and deionized water for 3 minutes, and finally dry it with a nitrogen gun.

[0033] 2. ZnO / Zn 1-x Mg x O Growth of multi-quantum well active layer: put the substrate after surface cleaning into the growth chamber of the radio frequency magnetron sputtering system, and the growth chamber is evacuated to the background pressure of 1×10 -3 Pa, heating the substrate to a temperature of 200°C. ZnO ceramic target is selected as the target material for depositing ZnO potential well layer, and a mixed target material of Mg metal target and ZnO ceramic target is selected as the target material for depositing ZnO potential well layer. 1-x Mg x The target material of the O barrier layer, wherein the area ratio of the Mg metal target and the ZnO ceramic target is 1:1, the Zn 1-x Mg x x=0.18 in the O layer. Before coating, pr...

Embodiment 3

[0037] 1. Substrate cleaning: Use n-type GaN grown on sapphire as the substrate, cut it into a size of 15mm×15mm, ultrasonically clean it with acetone, alcohol, and deionized water for 3 minutes, and finally dry it with a nitrogen gun.

[0038] 2. ZnO / Zn 1-x Mg x O Growth of multi-quantum well active layer: put the substrate after surface cleaning into the growth chamber of the radio frequency magnetron sputtering system, and the growth chamber is evacuated to the background pressure of 1×10 -3 Pa, heating the substrate to a temperature of 300°C. ZnO ceramic target is selected as the target material for depositing ZnO potential well layer, and a mixed target material of Mg metal target and ZnO ceramic target is selected as the target material for depositing ZnO potential well layer. 1-x Mg x The target material of the O barrier layer, wherein the area ratio of the Mg metal target and the ZnO ceramic target is 1:1, the Zn 1-x Mg x x=0.18 in the O layer. Before coating, pr...

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Abstract

The invention discloses a ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and a preparation method thereof. The substrate of the ultraviolet laser diode is n-shaped GaN growing on a sapphire, a ZnO/Zn1-xMgxO multi-quantum trap active layer formed by alternately depositing ZnoO and Zn1-xMgxO, a p-shaped NiO thin film layer and a second electrode are sequentially arranged on the substrate from bottom to top, and a first electrode and the ZnO/Zn1-xMgxO multi-quantum trap active layer are deposited on an n-shaped GaN film layer in parallel. The preparation method of the ZnO/ZnMgO multi-quantum trap ultraviolet laser diode comprises the following steps of: firstly preparing the ZnO/Zn1-xMgxO multi-quantum trap active layer on the substrate by using a radio-frequency magnetic-control sputtering process; then sputtering the p-shaped NiO thin film layer on the n-shaped ZnO thin film layer; and finally making the first electrode and the second electrode. The ZnO/ZnMgO multi-quantum trap ultraviolet laser diode has the characteristic of favorable electro-ultraviolet free lasing light emitting, the light-emitting peak wavelength is about 373 nm, and the width of single lasing light rays is less than 0.5 nm. The ZnO/ZnMgO multi-quantum trap ultraviolet laser diode has the advantages of simple preparation process, low cost and easy realization of industrialization.

Description

technical field [0001] The invention relates to a laser diode and a preparation method thereof, belonging to the field of optoelectronic devices. Background technique [0002] Zinc oxide (ZnO) is a new type II-VI direct bandgap wide bandgap semiconductor material. The band gap of ZnO is 3.37eV at room temperature, and the emission wavelength is equivalent to the wavelength of near-ultraviolet light (370nm), which is very suitable for making short-wavelength light-emitting, photosensitive and other optoelectronic devices. ZnO is similar to GaN in terms of lattice structure, unit cell parameters and forbidden band width, and has a higher melting point and greater exciton binding energy than GaN, and has lower photoluminescence and stimulated emission. threshold as well as good electromechanical coupling properties, thermal and chemical stability, while being low cost and environmentally friendly. Therefore, ZnO is considered to be an ideal substitute material for GaN, and ha...

Claims

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Application Information

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IPC IPC(8): H01S5/34H01S5/30H01S5/042
Inventor 方国家龙浩黄晖辉李颂战莫小明王皓宁
Owner 常熟紫金知识产权服务有限公司
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