Radio frequency magnetron sputtering method to prepare superhard TiB2/TiAIN nano multilayer film

A radio frequency magnetron sputtering, nano-multilayer technology, applied in the direction of sputtering coating, coating, layered products, etc., can solve the problems of surface strengthening failure, brittle cracking, low brittleness, etc., and achieve the effect of enhancing the bonding force

Inactive Publication Date: 2008-07-09
TIANJIN NORMAL UNIVERSITY
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  • Abstract
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  • Claims
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Problems solved by technology

However, in practical applications, it is impossible to further improve their hardness, wear resistance, bonding force with the substrate, and take into account low brittleness, relatively low stress, and high thickness, because as the thickness of the film increases, these A large columnar crystal structure will appear in the elemental strengthening film, and the brittleness and residual stress will increase accordingly, resulting in its brittle cracking and falling off, making the surface strengthening failure

Method used

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  • Radio frequency magnetron sputtering method to prepare superhard TiB2/TiAIN nano multilayer film
  • Radio frequency magnetron sputtering method to prepare superhard TiB2/TiAIN nano multilayer film
  • Radio frequency magnetron sputtering method to prepare superhard TiB2/TiAIN nano multilayer film

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Experimental program
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Embodiment

[0030] Synthesis of TiB at room temperature 2 / TiAlN nano multilayer film:

[0031] (1) Before the experiment, the Si wafers were ultrasonically cleaned with anhydrous alcohol and acetone for 10 minutes, and after drying, they were placed in the ion beam assisted deposition coating chamber and bombarded and cleaned with Ar ion beams for at least 15 minutes for all samples.

[0032] (2) Vacuum the chamber so that the background vacuum in the chamber is 3×10 -4 Pa to 1×10 -4 Pa between.

[0033] (3) Use a mass flow meter to control the Ar intake flow to keep it at 4-60sccm, adjust the gate valve to keep the air pressure in the vacuum chamber at 2-3Pa, gradually increase the radio frequency voltage to make the two targets glow, and TiB 2 The RF power of TiAl is set at 60-100W, and the RF power of TiAl is set at 60-100W (adjustable).

[0034] (4) On the premise of not adding substrate bias voltage, first deposit metal Ti with a thickness of about 40-60 nm on the Si substrate t...

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Abstract

The invention relates to a radio frequency magnetron sputtering method to prepare superhard TiB2 / TiAIN nano-multilayers. By adopting the radio frequency magnetron sputtering technology, a radio-frequency power supply is used to excite plasma to sputter TiB2 and TiAI ceramic targets. Multilayers of TiB2 and TiAIN are deposited on a one-side polished Si (100) substrate. A mechanical pump and a molecular pump are adopted to pump the air pressure in a vacuum chamber to 3.0X10<-4> Pa to 1.0X10<-4> Pa. When TiB2 is deposited, pure argon gas is sputtered. The flow of argon gas is controlled with a mass flow controller, and is kept to be 4sccm to 60sccm. When TiAIN is deposited, argon gas and nitrogen gas are sputtered; and the ratio of nitrogen gas to argon gas is changed from 1:1 to 1:50. During the complete deposition process, the total working air pressure is: 0.1 Pa to 0.8 Pa when TiB2 is deposited; 0.2 Pa to 1.0 Pa when TiAIN is deposited. The cycle of the multi-layers is 30 layers to 200 layers. The novel superhard TiB2 / TiAIN nano-multilayers have the overall characteristics of high hardness, low internal stress, high binding force of the layer base. The novel superhard TiB2 / TiAIN nano-multilayers have important application prospects in reinforced films on the surface of knife edges and moulds.

Description

technical field [0001] The invention belongs to the field of surface strengthening films for various cutting tools and moulds. In particular, it relates to the preparation of superhard TiB by radio frequency magnetron sputtering 2 / TiAlN nano-multilayer film, a new process for synthesizing superhard nano-multilayer surface strengthening film composed of titanium diboride and titanium aluminum nitrogen by radio frequency magnetron sputtering technology. Background technique [0002] At present, among the surface strengthening films for various cutting tools and molds, transition metal nitride films are well-known materials, mainly because they have a certain commonality of high melting point, high hardness and good chemical stability, but they are also They have defects such as high brittleness, high residual stress, and poor bonding with the substrate, which greatly affect their application range. For example: titanium diboride (TiB 2 ) film and titanium aluminum nitrogen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B7/02B32B33/00B32B9/00B32B15/04C23C14/34C23C14/54C23C14/02
Inventor 李德军刘思鹏邓湘云
Owner TIANJIN NORMAL UNIVERSITY
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