ZrB2/W nano multilayer film and preparation method thereof

A nano-multilayer, multi-layer film technology, applied in the direction of coating, layered products, metal material coating process, etc., can solve the problems of no report, high melting point chemical stability, etc., to improve mechanical properties and enhance bonding force Effect

Inactive Publication Date: 2012-07-04
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] ZrB 2 Because of its extremely high melting point, high chemical stability, high hardness and excellent wear resistance, it is used as hard tool materials, abrasives, alloy additives and wear-resistant parts; W film is used in tool coatings and electronic devices, etc. It has also been well used in the field, but at present, for ZrB 2 / W The study of nano-multilayer film has not been reported yet

Method used

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  • ZrB2/W nano multilayer film and preparation method thereof
  • ZrB2/W nano multilayer film and preparation method thereof
  • ZrB2/W nano multilayer film and preparation method thereof

Examples

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Embodiment

[0047] use N 2 Synthesis of ZrB with Auxiliary Combination of Substrate Heating Conditions 2 / W Nano multilayer film:

[0048] (1) Before the experiment, the Si wafers were ultrasonically cleaned with acetone and absolute alcohol for 15 minutes, dried and put into the ion beam assisted deposition coating chamber.

[0049] (2) Vacuum the chamber so that the background vacuum in the chamber is 2.0×10 -4 Pa.

[0050] (3) Open the air inlet of the auxiliary chamber, control the Ar inlet flow rate with a mass flow meter to keep it at 4.5 sccm, adjust the discharge voltage to 70V, the acceleration voltage is 100V, the auxiliary energy is 500eV, and the auxiliary beam current is 5mA, The sample was bombarded and cleaned for at least 5 min with an Ar ion beam.

[0051] (4) Open the air inlet of the sputtering chamber, control the Ar intake flow rate with a mass flow meter, keep it at 4.5sccm, adjust the discharge voltage to 70V, the acceleration voltage is 200V, and the sputtering...

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Abstract

The invention relates to a ZrB2 / W nanometer multilayer film and a preparation method thereof. By using an auxiliary sedimentation system of an ionic jet, Ar<+> is used for bombarding ZrB2 and W target under three circumferences that supplementary condition is not added, N2 supplementary condition is added, N2 supplementary condition is combined with the heating condition; multilayer film of the ZrB2 and W is deposited on a substrate Si (100), a single side of which is polished. The ZrB2 / W nanometer multilayer film alternatively has W and ZrB2 / W layers on a pure ZrB2 / W layer with the thickness of 20-30 nanometers; the thickness of the layer per period is 3-16 nanometers; the period of the multilayer film is 33-140 layers; the total thickness of the layer is 480-540 nanometers. The technique parameters of sputtering ion source are that: 200 eV of auxiliary energy and 5 mA of sputtering beam. By changing the modulation period of the multilayer layer, the modulation ration of the ZrB2 / W and W layer is kept in 3 / 1, and the thickness is kept in about 500 nm. The ZrB2 / W nanometer multilayer film has good characteristics of high hardness, lower internal stress, and high film base bonding force and has important potential application prospect in a knife cutting tool and the surface strengthening film of a mould.

Description

technical field [0001] The invention belongs to the technical field of surface strengthening films for various cutting tools and moulds. Especially involving a ZrB 2 / W Nano multilayer film and its preparation method, a new process for preparing superhard nano multilayer surface strengthening film composed of zirconium diboride and tungsten by using high vacuum ion beam assisted deposition system (IBAD). Background technique [0002] Thin films of Group VIB transition metals (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W) and transition metal compounds with boron, carbon, nitrogen, and oxygen have been extensively studied in recent years. Nitrides, carbides, and borides of transition metals are good superhard thin film materials, and there are still many thin film materials to be further researched and developed in this field. At present, domestic Zr, ZrB 2 , ZrN, W, WN and other research and application have achieved certain results, but about ZrB 2 / W Nano-multilayer research has n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/00C23C14/34C23C14/54C23C14/02
Inventor 李德军谭明曹猛
Owner TIANJIN NORMAL UNIVERSITY
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