Wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material and preparation method thereof

A composite heterojunction and dandelion technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve problems such as inapplicability to large-scale industrial production, complex synthesis process, and high production cost. Achieve low cost, enhanced catalytic performance, and high reproducibility
CN104437555AInactive Publication Date: 2015-03-25EAST CHINA NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
EAST CHINA NORMAL UNIV
Publication Date
2015-03-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material. The wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material contains MoS2 nanosheets and TiO2 dandelion nanospheres, wherein the MoS2 nanosheets penetrate through the space among nanorods on the TiO2 dandelion nanospheres uniformly and can be stably combined with gaps among the nanorods,. The invention also discloses a method for preparing the wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material by a two-step solvent method. The wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material and the method have the advantages that the preparation operation is simple, the yield is high and the cost is low, and the wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material has great potential and wide application prospect in the fields of photo-catalytic industrial wastewater and field emission.
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Description

technical field

[0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and in particular relates to a wave MoS 2 Nanosheet mosaic dandelion TiO 2 Nanosphere composite heterojunction semiconductor material and its preparation method. Background technique

[0002] MoS 2 It is a metal sulfide with a narrow band gap, and it is also a typical two-dimensional layered semiconductor material. The layers are combined by weak van der Waals forces, making MoS 2 It has a wide range of applications in lithium-ion batteries, photocatalysis, field emission and sensors. Rutile TiO 2 It is a metal oxide with a wide bandgap, a three-dimensional semiconductor material that is easy to prepare and easy to undergo structural modification, TiO 2 Due to its special spherical structure and large (001) active surface, dandelion nanospheres are most commonly used in photocatalysis.

[0003] Recently, the academic community has begun ...

Claims

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