54results about How to "Improve warpage" patented technology

The invention provides a glass core plate of an FCBGA packaging substrate and a manufacturing method of the glass core plate, and the manufacturing method of the glass core plate comprises the following steps: providing a glass plate comprising a first surface and a second surface which are oppositely arranged, and defining at least one of the first surface and the second surface as a functional surface of the glass plate; forming a metal seed layer covering the functional surface of the glass plate, and forming a shielding layer on the surface, away from the glass plate, of the metal seed layer; patterning the shielding layer to form a plurality of first openings exposing the metal seed layer in the shielding layer; conductive circuits filling the first openings are formed, and the shielding layer is removed to obtain second openings located between the two adjacent conductive circuits; and removing the metal seed layer at the bottom of the second opening to obtain the glass core plate. According to the FCBGA packaging substrate, the glass plate which is low in thermal expansion coefficient and high in glass transition temperature is adopted as the core plate of the glass core plate in the FCBGA packaging substrate, warping of the substrate is reduced, and the reliability of the substrate and the yield of products are improved.

The invention discloses a polyphenyl ether resin composition and application thereof. The polyphenyl ether resin composition comprises the following components in parts by solid weight: 20-75 parts by weight of maleimide resin or maleimide prepolymer; 10-60 parts by weight of a polyphenylene ether resin; 5-50 parts by weight of hydrocarbon resin; the maleimide resin or the maleimide prepolymer contains a limited structural unit. Compared with the prior art, the polyphenyl ether resin composition and the application thereof have the advantages that the maleimide resin or the maleimide prepolymer containing the styrene structural unit is matched with the polyphenyl ether resin and the hydrocarbon resin, so that the compatibility among the components of the polyphenyl ether resin can be improved, the dielectric constant Dk and the dielectric loss tangent Df are reduced, and the toughness is improved; the warping of the plate is improved, the excellent heat resistance is kept, and the excellent comprehensive performance is achieved.

The invention provides a packaging film glue solution composition, a packaging film as well as a preparation method and application of the packaging film. The packaging film glue solution composition is prepared from the following components in parts by weight: 10 to 30 parts of organic silicon modified aliphatic polyurethane acrylate resin, 0.1 to 5 parts of UV (Ultraviolet) reactive diluent, 30 to 60 parts of epoxy resin, 2 to 12 parts of flexibilizer, 20 to 55 parts of curing agent, 0.1 to 2 parts of accelerant, 5 to 20 parts of light diffusion powder, 0.02 to 1.0 part of coupling agent and 0.05 to 0.5 part of photoinitiator, the organic silicon modified aliphatic polyurethane acrylate resin is prepared from the following raw materials: polyester glycol, carbon-terminated hydroxyl polydimethylsiloxane, a diisocyanate compound and hydroxyl acrylate; the molar ratio of the polyester diol to the carbon-terminated hydroxyl polydimethylsiloxane is (15-45): 1; the UV active diluent comprises an epoxy acrylate compound. The packaging film glue solution composition provided by the invention has good film-forming property, and a packaging film prepared from the packaging film glue solution composition is good in environmental reliability and has high filling rate when a Mini LED display module is packaged.

The invention relates to the technical field of glass, in particular to a method for strengthening glass through low-temperature ion exchange, which comprises the following steps: carrying out first ion exchange strengthening treatment on glass to be treated by adopting first molten salt to obtain primary strengthened glass; carrying out secondary ion exchange strengthening treatment on the primary strengthened glass by adopting second fused salt to obtain the low-temperature ion exchange strengthened glass, wherein the first molten salt comprises a lithium salt, the second molten salt comprises a potassium salt, the temperature range of the first ion exchange strengthening treatment and the second ion exchange strengthening treatment is 250-400 DEG C, and the ion exchange temperature requirement can be met. The two-step strengthening is adopted at low temperature to gradually enhance the surface stress of the glass, so that the bending deformation of the glass caused by sudden enhancement of the surface stress of the strengthened glass is avoided, and the phenomenon of warping of the edge of the glass is effectively improved.

The invention relates to the technical field of special glass manufacturing, in particular to a method for preparing ultrathin aluminosilicate glass, which comprises the following steps: mixing SiO2, Al2O3, MgO, K2O, Na2O and ZrO2 / Li2O in proportion; feeding the mixed raw material into a glass melting furnace for high-temperature melting to form molten glass; pouring the molten glass into a float tank filled with tin liquor, and forming a layer of uniform glass tape on the surface of the tin liquor; standing and cooling the glass tape in the tin bath until the glass tape is solidified to form plate glass; carrying out annealing treatment on the cured plate glass, and carrying out chemical strengthening treatment in the annealing treatment process; judging whether the chemical strengthening treatment meets a preset standard or not according to the strengthening warping value; secondarily judging whether the chemical strengthening treatment meets a preset standard or not according to the strength evaluation value; the plate glass which meets the preset standard through chemical strengthening treatment is cut to obtain the ultra-thin aluminosilicate glass, and the quality of the ultra-thin aluminosilicate glass is improved.

The present invention relates to the field of glass physical tempering cooling, and specifically to a cooling air outlet mechanism for a glass tempering furnace. A cooling air outlet mechanism for a glass tempering furnace is provided, comprising a plurality of wind grille packages arranged up and down, the wind grille packages comprising a plurality of wind grille bars arranged in parallel, the wind grille bars being provided with air inlets, and a plurality of air outlets being provided on the side of the wind grille bars facing the roller of the tempering furnace, wherein the air outlets on each wind grille bar are arranged at intervals in the longitudinal direction, and the air outlets on two adjacent wind grille bars are arranged in a longitudinally staggered manner. By changing the arrangement of the air outlets on the wind grille bars, the longitudinal air outlets are also spaced apart like the transverse ones, and the longitudinal air outlet is intermittent and not distributed in a whole strip, thereby reducing the pressure difference of the wind force on the upper and lower surfaces of the glass plate, balancing the compressive stress on the upper and lower surfaces of the glass, making the wind pressure on the upper and lower surfaces of the glass more uniform, and greatly reducing the degree of bending of the four sides of the glass plate up and down, thereby effectively improving the problem of glass warping.

The invention provides a high-performance MEMS (Micro Electro Mechanical System) thermal conductive gas sensor and a preparation method thereof, and the high-performance MEMS thermal conductive gas sensor comprises a substrate structure layer, a supporting structure layer, a heating structure layer, a passivation structure layer and an electrode structure layer which are sequentially arranged from bottom to top, the supporting structure layer, the heating structure layer and the passivation structure layer are each provided with a plurality of through holes, the through holes are communicated with the cavity, the cantilever between at least two through holes is in a drum shape, and by means of the design structure, the working concentrated stress of the center of the cantilever is reduced, and the service life of the cantilever is prolonged. The joint of the suspension beam and the heating center is subjected to fillet design, so that the working stress is reduced; and the sensor has the characteristics of miniaturization, low power consumption, compatibility with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process and batch production.

The present invention discloses an LCP resin composition and a preparation method and application thereof, belonging to the technical field of polymer materials. The LCP resin composition comprises the following components in parts by weight: 100 parts of LCP resin, 0.1 to 1 part of a fully aromatic multifunctional oligomer, 10 to 60 parts of glass fiber and 20 to 70 parts of filler; the LCP resin comprises repeating units of the following structure: ‑O‑Ar1‑O‑, ‑OC‑Ar2‑CO‑, ‑O‑Ar3‑CO‑, ‑OC‑Ar4‑CO‑. The present invention uses LCP resin with a trace amount of fully aromatic multifunctional oligomer to form a micro-branched or micro-crosslinked structure, improve the skin-core structure of the LCP resin, destroy the segment regularity of the LCP resin, thereby improving the warping performance of the LCP resin composition and adjusting the bending modulus of the LCP resin composition.

The invention relates to the technical field of semiconductors, in particular to a low-temperature bonding method of a chip, which comprises the following steps of: preparing an upper chip with a micro bump which comprises a low-temperature material containing Sn; preparing a lower chip with a copper column, and reducing the roughness of the bonding surface of the copper column; and enabling the bonding surfaces of the micro bumps and the copper columns to be opposite, and carrying out bonding in a vacuum environment under the conditions that the temperature is 50-150 DEG C, the pressure is 10-40MPa and the pulse voltage is 2-6V. According to the low-temperature bonding method of the chip, low-temperature bonding can be realized, the bonding stability is improved, thermal damage caused by bonding is reduced, and the problem of warping of substrates of the upper chip and the lower chip after bonding is solved.

The invention discloses a resin composition and application thereof. The resin composition comprises the following components in parts by solid weight: 50-100 parts by weight of a first component; 5-60 parts by weight of a second component; 5-50 parts by weight of a third component; 0-50 parts by weight of epoxy resin; wherein the first component is a maleimide resin or a maleimide prepolymer, the second component is a cross-linking agent, the third component is an elastomer, and at least two of the first component, the second component and the third component comprise at least one of limiting groups. Compared with the prior art, the resin composition and the application thereof have the advantages that by adopting the components containing the styrene structural units, the compatibility among the components in the resin composition can be improved, the dielectric property of the resin composition can be reduced, the toughness can be improved, the warping of a plate can be improved, and excellent heat resistance and proper modulus can be kept; the comprehensive performance is excellent.

The invention relates to the technical field of semiconductors, in particular to an epitaxial structure and a preparation method thereof.The epitaxial structure comprises a substrate, a combined buffer layer comprising at least one buffer unit and a drift layer which are sequentially stacked from bottom to top; wherein each buffer unit comprises a nitrogen-doped buffer unit and a phosphorus-doped buffer unit. According to the epitaxial structure provided by the invention, by performing nitrogen and phosphorus doping on the surface of the substrate to form epitaxy of the composite structure buffer layer, the induction probability of stacking fault in the initial epitaxy stage can be reduced, and meanwhile, a large amount of atomic phosphorus is doped in the epitaxy process, and the lattice constant can be expanded, so that the problem that the nitrogen-doped lattice constant is reduced in the mass production process is solved, and the yield of the product is improved. Therefore, the wafer warping is improved, and the yield is improved.

The invention discloses a soft PP floor, and relates to the technical field of floors, the soft PP floor comprises a wear-resistant layer, a decorative layer, a high-multiple base material layer, a low-multiple base material layer and a balance layer in sequence from top to bottom, and the high-multiple base material layer and the low-multiple base material layer are prepared from PP particles, a filler, an antioxidant, a lubricant, a heat stabilizer, a compatilizer and chopped glass fibers. The soft floor is produced by using a PP material through reasonable formula matching, so that the floor meets the environmental protection requirement, meanwhile, the floor has higher mechanical strength, and through reasonable structural configuration, the problems that the soft PP floor material is high in crystallinity, easy to warp and large in contractibility are solved; the method has the advantages of good warping degree, less equipment investment, environmental protection and no plasticizer precipitation risk.

The present invention relates to a polycarbonate modified material for 3D printing with low printing temperature, a preparation method thereof and a printing filament. The polycarbonate modified material comprises 65 to 80 parts of polycarbonate, 20 to 35 parts of aliphatic aromatic copolyester and 1 to 5 parts of vinyl acetate copolymer, and a polycarbonate blended modified material is obtained by twin-screw melt extrusion, and then a filament that can be used for 3D printing is prepared by a single-screw extrusion wire drawing device. The print head temperature of the polycarbonate modified material can be reduced to 220°C, the base plate temperature can be reduced to 80°C, and the warping curvature can be controlled within 1.0m ‑1 Below, normal printing is not affected.

The invention provides an IGBT (Insulated Gate Bipolar Translator) device and a manufacturing method thereof, the IGBT device comprises an N-type semiconductor layer and a plurality of grooves located in the N-type semiconductor layer, gate electrodes are arranged in the grooves, and the gate electrodes are insulated and isolated from the N-type semiconductor layer through gate dielectric layers; the P-type body region is located between the adjacent grooves, and an N-type emitter region is arranged in the P-type body region; the N-type carrier storage layer is positioned below the P-type body region and is positioned between the adjacent grooves; the bottom of each groove is provided with a P-type protection layer, and the P-type protection layer is located below the N-type carrier storage layer and surrounds the bottom of the groove. The IGBT device adopts the shallow trench, so that the on-state voltage drop can be reduced, and the process yield can be improved; the bottom of the groove is surrounded by the P-type protection layer, so that local charge balance can be formed, and voltage resistance is improved.

The invention discloses a processing method for improving picosecond cutting board warping of an FPCOIL product, which comprises the following steps that a circuit board containing the product and a laser carrier capable of containing the circuit board are provided, and the laser carrier comprises a lower jig and an upper jig; the lower jig is placed on a working table; the circuit board is placed in the lower jig, and then the upper jig is placed at the upper end of the lower jig; the working table board adsorbs a circuit board through a lower jig, and a plurality of exhaust holes are formed in the lower jig; and cutting the circuit board by using a picosecond laser. The structure that the lower jig and the upper jig are fixed in a magnetic attraction mode is adopted for improving warping of a product board, the lower jig is placed on the working table, the whole circuit board is placed in the lower jig, a plurality of exhaust holes distributed in the periphery of the product are formed in the lower jig, effective attraction of the working table to the circuit board is facilitated, and the follow-up laser cutting precision is improved; and the upper jig is pressed on the edge area of the circuit board, so that the warping of the product can be improved.

A method for forming a semiconductor structure comprises the following steps: providing a wafer which comprises a functional surface and a non-functional surface; forming a functional layer structure on the surface of the functional surface; obtaining the warping condition of the wafer; according to the warping condition, at least one time of stress neutralization treatment is carried out on the surface of the non-functional surface to form a stress neutralization structure, the stress neutralization structure comprises at least one stress layer, and the stress neutralization treatment comprises the steps that an initial stress layer is formed on the surface of the non-functional surface; and performing stress enhancement processing on the initial stress layer to form the stress layer. The warping condition of the wafer is improved.

The problem is to provide a thermosetting resin composition that can form a resin layer with an excellent balance of flexibility, reflectivity, heat resistance and warpage. The thermosetting resin composition of the solution is characterized by containing a hydroxyl-containing fluororesin, an isocyanate compound having two or more isocyanate groups, and rutile titanium oxide, wherein the mass ratio of the fluororesin to the isocyanate compound is 1 or more and 20 or less, and the mass ratio of the rutile titanium oxide to the fluororesin is 1.4 or more and 4 or less. In addition, the thermosetting resin composition of the present invention contains a hydroxyl-containing fluororesin, an isocyanate compound having two or more isocyanate groups, and rutile titanium oxide, wherein, when the elemental analysis is performed on the cured product obtained by curing the thermosetting resin composition by a combustion method, when the whole is defined as 100 mass%, it is detected that the ash content is 45 mass% or more, the fluorine atoms are 3 mass% or more, and the nitrogen atoms are 0.1 mass% or more.

The utility model belongs to the field of additive manufacturing, and relates to a powder spreading device which comprises a supporting seat, a powder spreading roller assembly, a vibration generating mechanism and a driving device. The driving device is arranged on the supporting seat and is connected with the powder spreading roller group; the driving device drives the powder spreading roller assembly to work; and the vibration generating mechanism is arranged on the powder spreading roller assembly. The utility model provides the powder spreading device capable of effectively improving the powder spreading density.

This invention discloses a novel POP (Position-on-Pack) packaging structure that improves heat dissipation and reduces warpage. The structure includes: a multilayer substrate, comprising at least a bottom substrate and a top substrate; a chip; a ceramic structural layer embedded within the bottom substrate, wherein the ceramic structural layer has through-holes that allow electrical conductivity between the upper and lower layers; and an indium wafer structural layer, the lower surface of which is mounted to the upper surface of the chip, and the upper surface of which is soldered to the lower surface of the top substrate. This invention improves warpage issues caused by thermal stress during packaging by adding a ceramic structural layer inside the bottom substrate. The through-holes in the ceramic structural layer create electrical conductivity between the upper and lower layers, ensuring that the ceramic structural layer does not affect the conductivity of the bottom substrate. Furthermore, by mounting an indium wafer on the upper surface of the chip in the bottom packaging structure and adding a soldering surface to the lower surface of the top substrate for soldering to the indium wafer, the overall POP packaging achieves heat dissipation through the indium wafer's connection to the external environment.

The invention discloses a production process and device of composite paper with excellent warping degree, for a process from a PET base film to a PET laser aluminized film part, a chemical layer coating and low-temperature drying process is added after mold pressing so as to prevent the composite paper from warping; the chemical layer is a waterborne polyurethane compound; when the chemical layer is coated, the temperature of the coating box is 40-60 DEG C, so that the laser information weakening caused by the influence of the temperature on the laser layer can be avoided. According to the invention, the process from the PET base film to the PET laser aluminum laminated film is mainly improved, and a chemical layer coating process and a low-temperature drying process are added after mold pressing, so as to prevent the composite paper from warping. The chemical layer is made of a waterborne polyurethane compound, and the drying temperature of the chemical layer is 40-60 DEG C. Under the temperature zone, after the chemical layer is dried, the influence on laser information on the PET mould pressing laser film is small, and the phenomenon that the laser layer is influenced by the temperature to cause'extinction 'is prevented.

This application relates to a photovoltaic module and an electrical device. The photovoltaic module includes a backsheet layer, which comprises a substrate layer and an inorganic ceramic coating located on at least one side of the substrate layer. This application reduces the overall shrinkage variation of the backsheet layer by forming an inorganic ceramic coating on the surface of the substrate layer. This inorganic ceramic coating constrains the expansion or contraction of the substrate layer, thereby improving the warpage problem of the backsheet layer.

The invention relates to the technical field of semiconductor packaging and manufacturing, and particularly discloses a material strip tool structure for improving warping of an organic substrate and a using method thereof.The material strip tool structure comprises a magnetic plate and a pressing plate, the magnetic plate and the pressing plate are installed on the two sides of the organic substrate respectively, a plurality of magnet positioning holes are formed in the magnetic plate, and the pressing plate is arranged on the magnetic plate; a plurality of hollow windows are arranged in the middle of the pressing plate, pressing plate positioning holes are formed in the two sides of the pressing plate, a plurality of base islands are arranged in the middle of the organic substrate, substrate positioning holes are formed in the two sides of the organic substrate, and the positioning pins sequentially penetrate through the substrate positioning holes and the pressing plate positioning holes. The organic substrate is mounted on the magnetic suction plate, and the pressing plate covers the organic substrate; wherein the organic substrate is completely attached to the magnetic attraction plate through attraction of the magnetic attraction plate and the pressing plate. According to the invention, the warping condition of the organic substrate can be effectively improved, and the quality and precision of glue drawing and surface mounting are improved.

The invention provides aluminum oxide ceramic slurry, aluminum oxide ceramic, a preparation method and application of the aluminum oxide ceramic and a gas sensor. Wherein the aluminum oxide ceramic slurry comprises the following components in percentage by mass: 5%-9% of an organic solvent, 2%-4% of a plasticizer, 0.6%-2.2% of a binder, 60%-80% of aluminum oxide powder and 10%-30% of a sintering aid; wherein the binder comprises the following components in percentage by mass: 2%-5% of polyethylene glycol-4000, 5%-10% of polyvinyl alcohol and 85%-93% of water; the sintering aid comprises silicon dioxide and boron oxide. According to the alumina ceramic slurry disclosed by the invention, the problems of warping of a ceramic layer and layering between Al2O3 ceramic and YSZ ceramic in a sintering process can be improved, and the flatness and device performance of a gas sensor can be improved.

The present disclosure provides a carrier assembly for carrying semiconductor package strips, comprising: a carrier body comprising a housing, the housing comprising side walls with support slots for carrying the semiconductor package strips inside the housing respectively, and the housing defining a front opening and a rear opening between the side walls to allow placement and displacement of the semiconductor package strips; and a pair of clamping devices for applying a clamping force to the semiconductor package strips against the support slots respectively, and each of the pair of clamping devices comprising: a locking plate; a strip contact extension extending from the locking plate and insertable through one of the front opening and the rear opening of the housing; and a locking member for moving the strip contact extension between a locked position and an unlocked position, wherein in the locked position, a semiconductor package strip is pressed by the respective strip contact extension against the support slot.

The present disclosure embodiment discloses a semiconductor packaging structure and a preparation method thereof, wherein the semiconductor packaging structure includes: a substrate; a first semiconductor chip located on the substrate, the first semiconductor chip having an exposed first surface, the first surface having a silicon-containing surface; a second semiconductor chip structure located on the first surface of the first semiconductor chip; the second semiconductor chip structure having a second surface opposite to the first surface; a first packaging compound structure, the first packaging compound structure having a bonding surface, the bonding surface at least covering the first surface of the first semiconductor chip and the second surface of the second semiconductor chip structure; wherein the bonding surface has a silicon-containing surface.

The technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first stack structure, a plurality of first slits passing through the first stack structure in a vertical direction and extending in a first horizontal direction orthogonal to the vertical direction, a first source line layer contacting a top of the first stack structure, a second source line layer directly contacting the first source line layer, and a second source line layer contacting the second source line layer. A second stack structure contacting the second source line layer and overlapping the first stack structure in the vertical direction, and a plurality of second slits penetrating the second stack structure in the vertical direction and extending in a second horizontal direction orthogonal to the vertical direction.

The invention provides a cover plate and a preparation method thereof, a display module and a display device. The cover plate comprises a substrate; the composite film layer is positioned on one side of the substrate; wherein the composite film layer comprises a positive expansion material and a negative expansion material. According to the cover plate provided by the invention, the composite film layer containing the positive expansion material and the negative expansion material is formed on the substrate, the positive expansion material is used for improving the hardness and friction resistance of the film layer, and the negative expansion characteristic of the negative expansion material is used for counteracting the strong extrusion stress generated by the positive expansion material; therefore, the extrusion stress in the superhard coating layer is eliminated, cover plate warping caused by the extrusion stress of the positive expansion material is avoided, and the warping problem of the cover plate is effectively solved. Meanwhile, the warping problem of the cover plate does not need to be improved by reducing ICP deposition power, and high ICP deposition power can be kept, so that it is guaranteed that the hardness and friction resistance of the film layer are not affected.

This disclosure provides a semiconductor device and a method for manufacturing the same. The method for manufacturing the semiconductor device includes: providing a first wafer; the first wafer having a first side and a second side opposite to each other in a first direction; bonding the first wafer to a carrier wafer via the first side; thinning the second side of the first wafer; forming a rigid thermally conductive film covering the second side of the first wafer; removing the carrier wafer; dicing the first wafer and the rigid thermally conductive film along the first direction to divide the first wafer into a plurality of chips; the rigid thermally conductive film covering the second side of the plurality of chips; bonding the first side of the plurality of chips to a second wafer; and bonding a third wafer to the rigid thermally conductive film.

The invention discloses a semiconductor device and a preparation method, the semiconductor device is provided with a trench, and the trench comprises a gate trench and an emitter trench which are arranged perpendicular to each other; the axis of the gate trench and the axis of the emitter trench have at least one intersection point, the gate trench or the emitter trench is disconnected at the intersection point so that the gate trench is not in contact with the emitter trench, and the disconnected parts of the gate trench and the emitter trench are electrically connected through a conductive material outside the trench; a P well region and an N + doped region are arranged between the gate trench and the emitter trench, the N + doped region is located above the P well region, and one side of the front metal extends to the P well region in a punching mode to realize ohmic contact with the substrate. According to the invention, the extension directions of the gate trench and the emitter trench are set to be two different directions, so that the stress generated by polycrystalline silicon in the trench has two different extension directions, and the two directions can generate opposite stress at the same time, thereby enabling the stress generated in the trench to counteract each other, and improving the reliability of the device. Therefore, the warping degree of the wafer is reduced.