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495results about How to "Improve warpage" patented technology

Light curing 3D printing equipment and image exposure system

The invention relates to an image exposure system of 3D printing equipment. The image exposure system comprises a spatial light modulator, a light source, a projection lens, a micro-displacement driving mechanism and a controller. The spatial light modulator has multiple micro-mirrors and is used for adjusting reflection direction of light irradiated on the micro-mirrors according to control signals, and each micro-mirror is a concave mirror and is used for converging light irradiated on the micro-mirror into micro-spot with the size being less than corresponding pixel size of the micro-mirror. The light source generates a light beam irradiated on the spatial light modulator. The projection lens is directed at a first direction of the spatial light modulator to make the light source to be projected onto the surface of a light-sensitive material through a micro-spot array formed by the micro-mirrors. The micro-displacement driving mechanism is connected with the spatial light modulator and can drive the spatial light modulator to move in a third direction and a fourth direction, which are perpendicular to each other, so as to fine-tune the position of the micro-spot array projected on the surface of the light-sensitive material. The controller is used for ordering the light source to expose more than once and ordering the micro-displacement driving mechanism to move during each exposure so as to project the exposed micro-spot array to different positions on the surface of the light-sensitive material.
Owner:PRISMLAB CHINA +1

Three-dimensional fan-out type PoP packaging structure and manufacturing process

The invention relates to a three-dimensional fan-out type PoP packaging structure and a manufacturing process. Metal layers are manufactured on a carrying sheet through the process with the front faces of chips facing upwards, grooving is conducted according to the arrangement positions of the chips, and electrodes connected with other packaging units are manufactured according to the requirements. Rerouting layers are manufactured on the front faces of the chips after plastic package, and bonding pads of the chips are fanned out to form first layer chip circuits. Second layer chips are manufactured by repeating the process with the front faces of the chips facing upwards, and the corresponding chip and the corresponding metal layer are pasted on the first packaging unit so that the first packaging unit can be connected with the previous packaging unit. Plastic package, drilling and metal filling are then conducted, and RDL manufacturing is conducted on the second layer chips. Multiple layers of chips are stacked by repeating the stacking process, or lower bump metal layer manufacturing and ball planting are conducted on RDL layers. The carrying sheet is removed after ball planting is completed, a back face rerouting layer is arranged on the back face of each first layer chip, the corresponding packaging unit is obtained, and the packaging units are stacked to form the PoP packaging structure. According to the three-dimensional fan-out type PoP packaging structure and the manufacturing process, slip dislocation caused by warping and expansion and contraction of plastic package materials can be effectively reduced.
Owner:江苏中科智芯集成科技有限公司

Method for reducing warping stress of LED epitaxy

The invention provides a method for reducing warping stress of LED epitaxy. The method comprises the steps of forming a GaN buffer layer on a sapphire substrate in an epitaxial mode, then growing a GaN layer on the GaN buffer layer in a three-dimensional mode, and forming a GaN epitaxial wafer which is provided with an island-shaped surface; after cooling is conducted, forming a double-layer thin film on the GaN epitaxial wafer provided with the island-shaped surface in an epitaxial mode, wherein the double-layer thin film comprises the GaN layer and an All-xGaxN layer, and forming double-layer thin films repeatedly in the epitaxial mode so as to form a superlattice on the GaN epitaxial wafer provided with the island-shaped surface; growing the GaN layer on the superlattice in a two-dimensional mode, and finishing preparation of a GaN base layer on the sapphire substrate. A superlattice inserting layer structure is adopted to adjust and release the warping stress between the GaN epitaxial layer growing in the two-dimensional mode and the sapphire substrate, accordingly, the warping degree when a light-emitting layer is grown on the epitaxial wafer is improved, wavelength difference between the central part and the edge part of the epitaxial wafer after the light-emitting layer is grown can be reduced, uniformity of the wavelength of the epitaxial wafer is improved, and accordingly the wave length yield of the epitaxial wafer is improved.
Owner:EPILIGHT TECH

Three-dimensional printer and printing method and three-dimensional printing head

The invention relates to a three-dimensional printer, a three-dimensional printing head and a printing method. The three-dimensional printing head comprises a material volume cavity, wherein a screw rod is arranged in the material volume cavity, a motor is connected with the screw rod, a material supply device is communicated with the material volume cavity, a printing nozzle is arranged on the end part of the material volume cavity, a heater is arranged on the material volume cavity and positioned between the material supply device and the printing nozzle, and a supercritical fluid supply system is communicated with the material volume cavity. A molten printing material is mixed with supercritical fluid to generate a single-phase molten mixture under the mixing and stirring effect of the screw rod, and a uniform microporous bubble formation effect is formed, so that the density value of a printing object can be reduced, the size deviation of the three-dimensional printing object can be alleviated, the flatness and straightness of the three-dimensional printing object can be improved by more than 50 percent, the temperature for printing the molten printing material is effectively lowered, the energy is saved, and the operation personnel is prevented from being scalded.
Owner:PRINT RITE UNICORN IMAGE PROD CO LTD

Low-fiber-emergence low-warping high-tenacity flame-retardant PET/PETG composite material and preparation method

The invention discloses a low-fiber-emergence low-warping high-tenacity flame-retardant PET/PETG composite material and a preparation method, and relates to the field of high polymer materials. The composite material is prepared by mixing 30-50 parts of PET resin, 5-20 parts of PETG resin, 0.1-1 part of a coupling agent, 2-8 parts of a flexibilizer, 11-15 parts of a fire retardant, 0-1 part of a nucleating agent, 0.1-1 part of an antioxidant and 0.1-1 part of a lubricating agent, adding 15-30 parts of irregular-shaped glass fibers during the extrusion process of a twin-screw extruder, extruding, and pelletizing to obtain. The preparation method of the low-fiber-emergence low-warping high-tenacity flame-retardant PET/PETG composite material disclosed by the invention utilizes the characteristic that the PETG resin is well compatible with the PET resin; the addition of the flame-retardant system PETG, the flexibilizer and the nucleating agent greatly improves the processing performance, the surface performance and the impact performance of the composite material, while influencing the other performances a little; meanwhile, the addition of the PETG and the irregular-shaped glass fibers reduces the crystallization temperature and the crystallization rate of the material, and lowers the warping degree.
Owner:古道尔工程塑胶(深圳)有限公司

Antistatic low-warping glass-fiber-reinforced weatherproof PP material and preparation method thereof

The invention discloses an antistatic low-warping glass-fiber-reinforced weatherproof PP material and a preparation method thereof, belonging to the field of modification of high polymer materials. The antistatic low-warping glass-fiber-reinforced weatherproof PP material comprises, by mass, 50 to 72 parts of PP resin, 3 to 7 parts of a flexibilizer, 1.5 to 5 parts of a compatilizer, 15 to 25 parts of glass fibers, 7 to 12 parts of mica powder, 0.3 to 0.8 part of a light stabilizing agent, 1 to 2.5 parts of an antistatic agent, 0.1 to 0.4 part of a nucleating agent and 0.2 to 0.5 part of an anti-oxidant. The antistatic low-warping glass-fiber-reinforced weatherproof PP material prepared in the invention has low warping, high strength and antistatic performance and can effectively prevent dust; due to high weatherability of the material, the performance retention rate of the material can be maintained at 80% or more under the condition of high-temperature high-humidity xenon lamp aging; through usage of the flat glass fibers, low warping performance of the material is guaranteed on the prerequisite that high strength of the material is ensured; since propenyl elastomer and the nucleating agent are used, buckling deformation of the material can be effectively improved; and the material has good application prospects in the fields of fan blades of wind wheels, motors and the like.
Owner:GUANGDONG ALDEX NEW MATERIAL CO LTD

Low warping PP (propene polymer) material for 3D (three-dimensional) printing and preparation method thereof

The invention discloses a low warping PP (propene polymer) material for 3D (three-dimensional) printing and a preparation method thereof. The low warping PP material is prepared from the following components in parts by weight: 40 to 95 parts of PP, 0 to 10 parts of a flexibilizer, 5 to 60 parts of warping resistant filler, 0.1 to 10 parts of a warping resistant agent, 0.2 to 5 parts of a compatilizer, 0.1 to 1 part of an antioxidant, 0.1 to 1 part of a lubricant, 0 to 0.5 part of an anti-ultraviolet agent and 0 to 1 part of toner. The shrinking percentage, weight-average molecular weight, molecular weight distribution and melt index of the PP are strictly controlled, so that the printing of the PP is realized; the printing stability of the PP is improved; and meanwhile, the warping during printing is controlled to some extent. The addition of the warping resistant filler having a relatively high degree of sphericity not only reduces the shrinking percentage of the PP but also can effectively eliminate the stress of a material; accordingly, the warping generated during printing is effectively prevented. The grain size of the warping resistant filler is controlled, so that not only is the filler dispersion facilitated, but also a nozzle of a 3D printer cannot be blocked. In addition, the warping resistant agent can thin the crystal form of the PP; crystal form thinning is conducive to lowering the internal stress of the PP, so that the warping of the PP during printing is ameliorated.
Owner:HUIZHOU RES INST OF SUN YAT SEN UNIV

Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the field of a semiconductor technology. The gallium nitride-based light emitting diode epitaxial wafer comprises a sapphire substrate, and an AlN buffer layer, a 3D nucleating layer, a non-doped GaN layer, an N type layer, a multi-quantum-well layer, an electronbarrier layer and a high-temperature P type layer which are laminated on the sapphire substrate in sequence; the 3D nucleating layer comprises a first sub layer and a second sub layer; the first sub layer is a GaN layer grown at a temperature of 800-1,100 DEG C; and the second sub layer is a GaN layer grown at a temperature of 1,000-1,200 DEG C. The lower the growth temperature of the first sub layer is, the formed crystal particles are smaller and more intensive; the crystal particles are stretched and deformed to close gaps to lower surface energy, so that tensile stress is generated, and the epitaxial wafer is to be concave, thereby improving warping and improving wavelength concentration degree; and the temperature of the second sub layer is higher, the surface energy of the crystal particles is lower, so that it is ensured that warping of the whole epitaxial wafer is not caused, thereby improving the photoelectric performance of the LED chip.
Owner:HC SEMITEK SUZHOU

Wafer-level fan-out PoP encapsulation structure and making method thereof

The invention discloses a wafer-level fan-out PoP encapsulation structure and a making method thereof. The wafer-level fan-out PoP encapsulation structure is formed by stacking at least one fan-out PoP encapsulation units, each two adjacent fan-out PoP encapsulation units are connected through a second welding ball and coated and sealed by adopting a second plastic sealing material, each fan-out PoP encapsulation unit comprises an IC chip, a first plastic sealing material, a second binding material, a metal salient point structure, a first metal layer, a second metal layer, a first rewiring metal routing layer, a first dielectric material layer, a second rewiring metal routing layer, a second dielectric material layer, a first welding ball and the second welding ball, a bonding pad of each IC chip is connected with the corresponding first rewiring metal routing layer, each metal salient point structure forms a molded plastic through hole, and three-dimensional integrated interconnection between an upper encapsulating body as well as a lower encapsulating body in each fan-out PoP encapsulation unit and an external structure is realized through the corresponding molded plastic through hole. The making method mainly includes arranging a metal substrate wafer on a first carrier wafer; making the metal salient point structure on the surface of the metal substrate wafer; feeding the chip; plastically sealing, making the first rewiring metal routing layer; arranging a second carrier wafer, removing the first carrier wafer, etching the lower surface of the metal substrate wafer to form the second rewiring metal routing layer; performing stacking and reflow soldering; removing the second carrier wafer; forming the fan-out PoP encapsulation unit after ball placing and reflow soldering processes; performing stacking and reflow soldering on the fan-out PoP encapsulation units; and forming the wafer-level fan-out PoP encapsulation structure after plastic sealing. By the wafer-level fan-out PoP encapsulation structure and the making method, the problems of encapsulating density, cost and reliability of existing PoP encapsulation technology are solved.
Owner:HUATIAN TECH XIAN

Liquid crystal display module and liquid crystal display device

The present invention provides a liquid crystal display module and a liquid crystal display device. The liquid crystal display module comprises: a display panel; a flexible circuit board and an integrated circuit chip, wherein the flexible circuit board comprises a first end and a second end; the first end comprises a second binding terminal; the second binding terminal of the first end is connected to a first binding terminal of a non-display area; the flexible circuit board comprises at least two conductive layers; the flexible circuit board further comprises at least two rows of bonding pads between the first end and the second end; each row of the bonding pads comprises a plurality of sub-bonding pads; the conductive layers are exposed by the sub-bonding pads; the flexible circuit board further comprises a component group; and the integrated circuit chip is electrically connected to the sub-bonding pads through conductive adhesive. The module provided by the invention has the technical effects that the production efficiency can be improved; the cost is reduced; the risk of pressing deviation is reduced; the product yield is increased; the problem that the integrated circuit chip is easy to break is improved; and the package reliability of the integrated circuit chip is increased.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD
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