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Gallium oxide crystals with thermoluminescence performance and preparation method thereof

A gallium oxide and thermoluminescence technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems affecting the consistency of detectors, difficulty in controlling the amount of carbon doping, and uneven distribution of carbon, etc., to achieve Reduce the probability of cleavage cracking, stabilize the thermoluminescent performance, and inhibit the effect of decomposition and volatilization

Active Publication Date: 2016-05-25
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the melt method grows α-Al 2 o 3 : C crystal, the melting point is as high as 2050°C, carbon volatilizes in a high-temperature growth environment, and it is difficult to enter α-Al through the melt 2 o 3 lattice, resulting in α-Al 2 o 3 : The carbon doping amount of C crystal is difficult to control, and the carbon distribution is extremely uneven, which greatly affects the consistency of the detector and increases the difficulty of calibration

Method used

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  • Gallium oxide crystals with thermoluminescence performance and preparation method thereof
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Embodiment 1

[0033] With high purity β-Ga2O 3 (99.999%) powder and doping amount 0.2mol% high purity GeO 2 (99.99%) powder is used as raw material, all raw materials are mixed and ground on a planetary ball mill at 95r / min for 24 hours, taken out, isostatically pressed, and sintered at 1450°C for 15 hours in an air atmosphere to make polycrystalline ceramic raw materials. Put the polycrystalline ceramic raw material into the iridium gold crucible of the guided mode method, β-Ga2O 3 The single crystal is placed in the iridium seed crystal fixture, and the crystal growth direction is parallel to the (100) cleavage plane. After evacuating to 5Pa in the furnace, fill with Ar gas, continue to heat up to 1400°C, keep the temperature constant for 0.5h, and then fill with CO 2 Gas, continue to heat up to 1850 ° C until the raw materials are completely melted and rise to the top of the mold along the mold slit, keep the temperature for 1 hour, and ensure the final gas ratio Ar:CO in the furnace ...

Embodiment 2

[0035] With high purity β-Ga 2 o 3 (99.999%) powder and doping amount 2mol% high purity GeO 2 (99.99%) powder is used as raw material, all raw materials are mixed and ground on a planetary ball mill at 95r / min for 24 hours, taken out, isostatically pressed, and sintered at 1450°C for 15 hours in an air atmosphere to make polycrystalline ceramic raw materials. Put the polycrystalline ceramic raw material into the iridium gold crucible of the guided mode method, β-Ga2O 3 The single crystal is placed in the iridium seed crystal fixture, and the crystal growth direction is parallel to the (100) cleavage plane. After evacuating to 5Pa in the furnace, fill it with Ar gas, continue to heat up to 1400°C, keep the temperature constant for 0.5h, and then fill it with CO 2 Gas, continue to heat up to 1850 ° C until the raw materials are completely melted and rise to the top of the mold along the mold slit, keep the temperature for 1 hour, and ensure the final gas ratio Ar:CO in the fu...

Embodiment 3

[0037] With high purity β-Ga 2 o 3 (99.999%) powder and doping amount 5mol% high purity GeO 2 (99.99%) powder is used as raw material, all raw materials are mixed and ground on a planetary ball mill at 95r / min for 24 hours, taken out, isostatically pressed, and sintered at 1450°C for 15 hours in an air atmosphere to make polycrystalline ceramic raw materials. Put the polycrystalline ceramic raw material into the iridium gold crucible of the guided mode method, β-Ga 2 o 3 The single crystal is placed in the iridium seed crystal fixture, and the crystal growth direction is parallel to the (100) cleavage plane. After evacuating to 5Pa in the furnace, fill it with Ar gas, continue to heat up to 1400°C, keep the temperature constant for 0.5h, and then fill it with CO 2 Gas, continue to heat up to 1850 ° C until the raw materials are completely melted and rise to the top of the mold along the mold slit, keep the temperature for 1 hour, and ensure the final gas ratio Ar:CO in the...

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Abstract

The invention relates to gallium oxide crystals with thermoluminescence performance and a preparation method thereof. The gallium oxide crystals comprise gallium oxide and Ge4+ doped in gallium oxide, and the doping concentration preferably ranges from 0.1 mol% to 10 mol%. The gallium oxide crystals are prepared through a mode guide method. Compared with the prior art, the germanium-doped gallium oxide crystals have the good thermoluminescence performance, and the Ge4+ doping concentration can be controlled. A mixed atmosphere of Ar and CO2 is adopted, Ar gas and CO2 gas introduced at different stages are combined, decomposition and volatilization of the gallium oxide crystals in the growing process are effectively restrained, and the crystals are short in growth period and low in cost.

Description

technical field [0001] The invention relates to a crystal material and a preparation method thereof, in particular to a gallium oxide crystal with thermoluminescent properties and a preparation method thereof. Background technique [0002] Thermoluminescence (TL for short) refers to the thermoluminescence of materials after absorbing radiant energy. In the 1950s, Daniels of the University of Wisconsin in the United States first proposed that thermoluminescence could be used as a method of radiation dosimetry, and used the thermoluminescence properties of LiF for the monitoring of radiation dose at the atomic bomb test site and the irradiation of cancer patients treated with radioisotopes. Dosimetry (F. Daniels, Thermoluminescence dosimetry seminaron the effects of ionizing radiations, Evans signal corps engineering laboratories, Belmar, N.J., 1953.). At present, the thermoluminescent dosimetry materials mainly include doped lithium fluoride series (LiF:Mg,Ti and LiF:Mg,Cu,P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B15/34C30B33/02
CPCC30B15/34C30B29/16C30B33/02
Inventor 唐慧丽徐军罗平
Owner TONGJI UNIV
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