Zinc oxide based semiconductor luminous component and manufacturing method thereof

A light-emitting component, zinc oxide technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in producing high-quality P-type zinc oxide, inability to produce light-emitting diodes, stagnant technological development, etc. Effects of interface quality and uniformity, low material growth temperature, and low material defect density

Inactive Publication Date: 2009-09-23
陈敏璋
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, due to the presence of many donor defects in ZnO, this defect will have a compensating effect on the doped acceptor, and because the solid-state solubility of acceptor impurities in ZnO is very low, it is difficult to Produce high-quality P-type zinc oxide, and therefore cannot produce the core structure of light-emitting diodes-p-n junction
[0009] Although zinc oxide is very suitable as a white light LED material, due to current technical limitations, the development of technology using zinc oxide as a white light LED material has stagnated

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  • Zinc oxide based semiconductor luminous component and manufacturing method thereof
  • Zinc oxide based semiconductor luminous component and manufacturing method thereof
  • Zinc oxide based semiconductor luminous component and manufacturing method thereof

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Embodiment Construction

[0024] see figure 1 , figure 1 is a schematic diagram of a manufacturing method according to a preferred embodiment of the present invention. The manufacturing method according to the preferred embodiment of the present invention utilizes a process based on atomic layer deposition to manufacture zinc oxide-based semiconductor light-emitting components. Here, the zinc oxide-based semiconductor light-emitting component means that it contains a zinc oxide layer, Mg x Zn 1-x O layer, Be y Zn 1-y O layer or other compound layers containing zinc oxide, but not limited thereto.

[0025] Such as figure 1 As shown, first, a substrate 10 is prepared, and the substrate 10 is placed in a reaction chamber 20 designed to perform an atomic layer deposition process. In this embodiment, substrate 10 can be sapphire substrate, silicon substrate, SiC substrate, GaN substrate, AlGaN substrate, InGaN substrate, ZnO substrate, YSZ (yttria-stabilized zirconia) substrate, ScAlMgO 4 Substrate,...

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Abstract

The invention discloses a zinc oxide based semiconductor luminous component and a manufacturing method thereof. According to the manufacturing method of the invention, firstly, a substrate is prepared, and then a zinc oxide based multilayer structure is formed on or above the substrate by a process based on atomic layer deposition, wherein the zinc oxide multilayer structure contains a luminous area.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device (Semiconductor light-emitting device) and a manufacturing method thereof, in particular to a zinc oxide-based (ZnO-based) semiconductor light-emitting device and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor component, and it was mostly used as an indicator light, a display panel, etc. at the beginning. With the advent of white LEDs, they are also used as lighting. It is known as a new type of light source in the 21st century, and has advantages that traditional light sources cannot compare with, such as high efficiency, long life, and not easily damaged. [0003] Zinc oxide (ZnO) is a group II-VI compound semiconductor with a direct energy band structure, a bandgap energy of about 3.37eV, and a luminescent range in the ultraviolet band. As a material for manufacturing white LEDs, zinc oxide has the foll...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/30
Inventor 陈敏璋陈星兆
Owner 陈敏璋
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