18results about How to "High breakdown field strength" patented technology

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

The present disclosure relates to a complex-phase ceramic and a preparation method and application thereof, the electrical performance of the ceramic single crystal boundary is improved by introducing yttrium element and complex phase, and then the electrical performance of the entire ceramic system is improved; the prepared yttrium element doped calcium copper titanate and strontium copper titanate complex phase ceramic system has excellent breakdown field strength and giant dielectric performance, and can improve the performance of capacitor energy storage elements, memory functional devices, multilayer ceramic capacitors and other functional devices.

The invention discloses a polyimide dielectric film containing carboxyl betaine and a preparation method thereof. The carboxyl betaine-containing polyimide dielectric film is prepared from carboxyl betaine-containing polyimide, and the carboxyl betaine-containing polyimide is prepared by the following steps: firstly, taking a precursor of carboxyl betaine, m-phenylenediamine and bisphenol a type diether dianhydride as monomers, and carrying out condensation polymerization to obtain polyamide acid; carrying out complete imidization on the polyamide acid under the action of a catalyst isoquinoline to obtain polyimide containing a precursor; and reacting the polyimide containing the precursor with sodium bromoacetate to obtain polyimide containing carboxyl betaine. The zwitterions are introduced into the polyimide structure to improve the dielectric and energy storage performance of the polyimide dielectric film, and meanwhile, the preparation method has the advantages of being low in cost, simple in process, controllable and adjustable in performance, suitable for large-scale application and the like.

The application discloses an iron-based barium sodium niobate ceramic material with high energy storage performance and a preparation method thereof. 4‑2x Sm 2x Na2Fe x Nb 10‑x O 30 , wherein 1<=x<=1.25. Barium carbonate, samarium oxide, sodium carbonate, ferrous oxide and niobium pentoxide are used as raw materials, and a standard solid-phase method is adopted to sinter the iron-based barium sodium niobate ceramic material. In the product formula, iron is used to replace niobium in the barium sodium niobate, which is lead-free, environment-friendly, rich in iron reserves and low in price, and is beneficial to control the cost of raw materials. In addition, the iron replacement is beneficial to enhance the relaxor ferroelectric performance of the material, can obtain a more slender hysteresis loop, and improves the energy storage efficiency of the material. The prepared ceramic material has few pores and cracks, high density, and the microstructure is obviously improved, the grain size is more fine and uniform, the ferroelectric polarization intensity and the breakdown field strength are significantly improved, the problem that the barium sodium niobate material is difficult to sinter is solved, and the ferroelectric performance and the energy storage performance are significantly improved.

The invention discloses a half-piece battery edge passivation method, which belongs to the technical field of half-piece battery edge passivation, and comprises the following steps of: 1, cutting a battery piece to obtain a half-piece battery; 2, cleaning the cutting surface of the half battery; 3, sequentially depositing a Ga2O3 film layer and an Al2O3 film layer on the cutting surface of the half cell after cleaning; step 4, carrying out annealing treatment on the Ga2O3 film layer and the Al2O3 film layer; and step 5, carrying out detection, sorting and packaging treatment on the half-piece battery after annealing treatment. The method has the beneficial effects that the cut surface of the half-piece cell is passivated and repaired by adopting the Ga2O3 / Al2O3 double-layer structure composite coating film, the interface state of the cut surface of the half-piece cell can be reduced by the strong passivation property of Ga2O3, and meanwhile, a smooth plane can be provided for subsequent deposition of an Al2O3 film, so that the passivation effect of the Al2O3 film can be greatly enhanced, the passivation performance is improved, and the service life of the half-piece cell is prolonged. And the pFF loss of the half cell is reduced, so that the power of the module is improved.

The invention provides a diamond device and a preparation method thereof, and relates to the technical field of diamond devices. The device comprises a diamond substrate; a conducting channel is arranged on the diamond substrate; one side of the conductive channel is provided with a source electrode, and the other side is provided with a drain electrode. A graphite grid electrode is embedded in the diamond substrate under the conducting channel; and the diamond substrate surrounds the graphite grid electrode on the whole circumference in a cross section perpendicular to the direction of the source-drain connecting line. A grid electrode is arranged below a conducting channel, and a graphite grid electrode with a buried grid structure is arranged in a diamond substrate. The in-situ diamond between the graphite grid electrode and the conductive channel plays a role of grid insulation. The in-situ diamond material has extremely high breakdown field strength, and the high-quality in-situ diamond is used as the gate medium, so that the breakdown characteristic of the diamond device can be remarkably improved. Diamond is adopted as the gate insulating layer, the gate insulating layer and the conductive channel layer are both diamond, the thermal expansion coefficient is the same, and thermal stress is reduced.

This invention belongs to the field of dielectric energy storage materials, and proposes a layered perovskite flexible dielectric thin film based on the synergistic effect of interlayer dipoles and intralayer dipoles, and its preparation method. The film includes a substrate, which is an Aurivillius phase layered perovskite SrBi. 5‑ x Pr x Ti4AlO 18 It has (Bi2O2) that is periodically stacked alternately along the c-axis. 2+ Insulating layer and (A) containing A-site cation and B-site cation n‑1 B n O 3n+1 ) 2‑ The perovskite structure layer, where x represents the Pr doping concentration, has doped ions occupying both Bi sites in the insulating layer and A sites in the perovskite layer. The preparation steps include preparing a precursor solution, spin-coating deposition, heat treatment, repeated spin-coating and heat treatment, and crystallization annealing. This invention enhances the dielectric energy storage performance by controlling the synergistic coupling between interlayer dipoles and intrinsic polyhedral dipoles within the perovskite layer, thereby strengthening both polarization intensity and breakdown field strength, and breaking the reverse coupling relationship between the two.

The present application relates to the technical field of dielectric material, and more particularly to a kind of polyetherimide dielectric film containing indane ring structure and its preparation method and application.The polyetherimide dielectric film containing indane ring structure provided by the present application is obtained by polymerization reaction and imidization reaction from diamine monomer and dianhydride monomer containing segment shown in formula I.The polyetherimide dielectric film provided by the present application has higher room temperature and high-temperature breakdown field strength, and also has good high-temperature energy storage performance, and the preparation method is simple, suitable for industrial application.Formula I.

The invention discloses a piezoelectric polymer and a blood pressure monitoring device based on the piezoelectric polymer, and relates to the technical field of blood pressure monitoring, the piezoelectric polymer comprises polyvinylidene fluoride, polyvinyl alcohol and N, N-dimethylacetamide according to the weight ratio of (61-71): (19-22): (400-500); the blood pressure monitoring device comprises a pressure sensor and a signal processing system, and the pressure sensor is in communication connection with the signal processing system; a sensitive material in the pressure sensor is a piezoelectric polymer; the piezoelectric polymer has higher piezoelectric property and has higher sensitivity to the real-time change state of the blood pressure in the blood pressure monitoring process, the detection result can be more accurate, and the device is suitable for being used in the treatment process of critical patients.

The invention discloses a nano composite dielectric film with a laminated structure and a preparation method thereof, and is characterized in that pressure-bearing layers and polarization layers are alternately laminated up and down to form 2-8 layers of nano composite dielectric films with the total thickness of 10-14 microns, and the preparation method comprises the following steps: coating the surface of a Ni (OH) 2 nanosheet with an organic matter PDI to obtain a Ni (OH) 2 (at) PDI nanosheet with a core-shell structure; the preparation method comprises the following steps: carrying out electrostatic spinning on a pressure-bearing layer solution in which the volume ratio of P (VDF-HFP) and Ni (OH) 2 (at) PDI nanosheets is 50% and a polarization layer solution in which the volume ratio of P (VDF-HFP) and Ni (OH) 2 (at) PDI nanosheets is 50%, and controlling the thickness ratio of the pressure-bearing layer to the polarization layer to be (6-3): (2-5) to obtain a primary nano-composite dielectric film, and finally carrying out hot-pressing film formation to obtain the nano-composite dielectric film with a laminated structure. The invention has the advantages that the breakdown field strength and the dielectric constant are synchronously improved, and the energy storage density is improved.

The application relates to the technical field of cable materials, in particular to an insulating cable material and a preparation method thereof. A large number of'sea-island' interface structures exist in a PP / SEBS blended material body, and charges generated by electrode injection and polarization are prone to accumulating at the'sea-island' interface, so that space charge accumulation is caused, and the voltage breakdown field strength of the material is reduced. Based on the above problems, the application provides an insulating cable material, wherein long-carbon-chain modified graphene is added in the material system; the long carbon chain makes the nano-graphene sheet layer structure not prone to agglomeration; the long carbon chain can also act as a 'bridge' to accelerate the migration speed of carriers in SEBS in all directions, so that the difference between the number of carriers reaching and leaving the'sea-island' interface in the polarization process of the PP / SEBS blended material is reduced, and the space charge accumulation phenomenon at the interface is effectively improved.

The invention discloses a good-conductivity and high-breakdown silicone rubber composite medium applied to cable accessories and a preparation method thereof, and belongs to an electrical insulating material and a preparation method thereof. The invention aims to solve the problem of local concentration of an electric field caused by mismatching of conductivity of SiR and XLPE in an existing cable accessory. The invention relates to a silicon rubber composite medium with good conductivity and high breakdown applied to cable accessories. The silicon rubber composite medium is obtained by modifying silicon rubber by using 3-methyl-2-butene-1-ol and 4-propylbenzoic acid; the preparation method comprises the following steps: grafting 3-methyl-2-butene-1-ol onto a molecular chain of the silicone rubber to improve the conductivity of the silicone rubber in a low field, and doping 4-propylbenzoic acid into the 3-methyl-2-butene-1-ol grafted silicone rubber to improve the free volume of the silicone rubber and improve the breakdown field strength of the silicone rubber in a high field; the cable accessory is used in offshore wind power, urban underground power grids, transformer substation engineering, photovoltaic power generation and energy storage systems.

The application provides a high-frequency transformer functional insulating material of plasmonic orientation boron nitride and a preparation method and application thereof, and relates to the technical field of insulating materials. The functional insulating material is obtained by sequentially covering, from an inner layer to an outer layer, a thermosetting resin matrix layer, a silicon-rich transition layer, an oriented boron nitride sheet layer, a boron nitride gradient insulating layer and a densified surface layer on the surface of a metal conductor. The insulating material can realize heat diffusion enhancement, electric field distribution homogenization and space charge inhibition, and exhibits high breakdown strength, high local discharge starting voltage and good long-term insulating stability under high-frequency non-sinusoidal voltage, and is suitable for insulating reinforcement of the winding end, the outgoing line end and the core clamping piece area of a high-frequency transformer of a super-speed train, and has a good application prospect.

The invention discloses an iron-based sodium barium niobate ceramic material with high energy storage performance and a preparation method thereof, the composition of the iron-based sodium barium niobate ceramic material is Ba (4-2x) Sm (2x) Na2FexNb (10-x) O30, and x is greater than or equal to 1 and less than or equal to 1.25. Barium carbonate, samarium oxide, sodium carbonate, ferric oxide and niobium pentoxide are used as raw materials, and a standard solid-phase method is adopted for sintering to prepare the samarium-doped barium carbonate. According to the product formula, iron is selected to replace niobium in barium sodium niobate, the product is lead-free and environment-friendly, iron reserves are rich, the price is low, the cost of raw materials is favorably controlled, iron replacement is favorable for enhancing the relaxor ferroelectric property of the material, a slender ferroelectric hysteresis loop can be obtained, and the energy storage efficiency of the material is improved. The prepared ceramic material has the advantages of few pores and cracks, high density, obviously improved microstructure, finer and more uniform grain size, obviously improved ferroelectric polarization strength and obviously improved breakdown field strength, solves the problem that the barium sodium niobate material is difficult to sinter, and obviously improves the ferroelectric property and energy storage property.

The invention discloses high-strength electrical epoxy resin and a preparation method thereof in the technical field of epoxy resin. The high-strength electrical epoxy resin comprises the following components in parts by weight: 30-50 parts of bisphenol F epoxy resin, 50-70 parts of bisphenol A epoxy resin, 15-25 parts of a functionalized epoxy monomer, 30-40 parts of a hyperbranched curing agent, 5-8 parts of a reactive diluent, 0.5-1 part of an antioxidant, 10-15 parts of aluminum hydroxide and 1-2 parts of a silane coupling reagent. By introducing the functionalized epoxy monomer and the hyperbranched curing agent, the technical effects of remarkably improving the tensile strength of the epoxy resin, improving the interfacial compatibility of the inorganic filler and the resin matrix, increasing the volume resistivity and reducing the dielectric loss are achieved.

The invention provides orthogonal-tetragonal multilayer heterostructure antiferroelectric ceramic and a preparation method thereof. Tetragonal phase antiferroelectric presintering powder is prepared, orthogonal phase antiferroelectric presintering powder is prepared, the tetragonal phase antiferroelectric presintering powder and the orthogonal phase antiferroelectric presintering powder are respectively subjected to secondary ball milling, drying and sieving and then subjected to tape casting treatment, and the antiferroelectric ceramic with the orthogonal-tetragonal multilayer heterostructure is obtained. A single-layer film A and a single-layer film B are obtained; and carrying out heterogeneous lamination temperature isostatic pressing treatment on the single-layer film A and the single-layer film B according to modes of AAAA, ABBA, BAAB, ABAB and BBBB to obtain the multi-layer heterostructure anti-ferroelectric ceramic, carrying out glue removal on the multi-layer heterostructure anti-ferroelectric ceramic, and calcining to obtain the orthogonal-tetragonal multi-layer heterostructure anti-ferroelectric ceramic. According to the multilayer heterostructure constructed by the invention, the breakdown field strength and the macroscopic polarization response of the material are synergistically improved through the interface blocking effect induced by the interlayer interface and the MWS interface polarization effect, so that the energy storage density is effectively improved.

This invention discloses a cross-linked polyethylene insulation material for medium-voltage DC cables and its preparation method. By weight, it comprises the following raw materials: 100-110 parts LDPE, 5-8 parts modified filler, 0.4-0.6 parts antioxidant, 0.2-0.3 parts cross-linking aid, and 0.4-0.7 parts initiator. The modified filler, prepared by a specific method, combined with an optimized cross-linking and antioxidant system, significantly improves the overall performance of the insulation material. This modified filler, through the synergistic effect of its deep trap energy levels in the core and the shallow trap energy levels of the outer organic molecules, increases the DC resistivity and breakdown field strength of the material. Simultaneously, the flexible long-chain structure grafted onto the filler surface improves its interfacial compatibility with the polyethylene matrix, giving the material excellent mechanical properties that meet the stringent requirements for long-term safe and stable operation of medium-voltage DC cables.

This invention discloses a polynorbornene imide insulating material, its preparation method, and its applications, belonging to the technical field of electrical insulation materials and their preparation. This invention solves the problem of poor insulation performance in existing polynorbornene imide dielectric films. This invention obtains FPNI by fluorinating polynorbornene imide (PNI), a polymer dielectric film with a wide bandgap and a high glass transition temperature organic rigid backbone. Furthermore, by doping FPNI with the wide bandgap organic molecule 4,4-dihydroxydicyclohexane (OH), not only is hydrogen bonding crosslinking between hydroxyl and fluorine atoms achieved, but the wide bandgap OH also brings higher electronic transition energy levels, resulting in a crosslinked polymer film with excellent insulation performance and a breakdown field strength of 619.53 MV / m.