High breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and preparation method

A technology of silicon dioxide and ceramic materials, used in circuits, capacitors, electrical components, etc., can solve the problem of low energy storage density, and achieve the effects of low reaction temperature, strong practicability and good repeatability

Active Publication Date: 2017-09-22
SHAANXI NORMAL UNIV
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its energy storage density is low. How to improve the energy storage density of dielec

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and preparation method
  • High breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and preparation method
  • High breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1. According to CdCu 3 Ti 4 O 12 The stoichiometric ratio of 3.1159g Cd(NO 3 ) 2 ·4H 2 O, 7.3212g Cu(NO 3 ) 2 ·3H 2 O was added to 10 mL of a mixed solvent of absolute ethanol and deionized water to prepare solution A, and 13.8 mL of Ti (C 4 H 9 O) 4 Add into 52.2mL absolute ethanol to prepare solution B; mix solution A and solution B, and add 4mL glacial acetic acid, the concentration of butyl titanate in the obtained mixed solution is 0.5mol / L, and the volume fraction of glacial acetic acid is 5.0 %, the volume fraction of deionized water is 10%, heated at 45 ° C and stirred evenly to obtain a sol, continue to stir until the sol becomes a gel, age the gel for 12 hours, and dry it at 100 ° C for 48 hours, A brown-blue loose xerogel was obtained; after grinding the xerogel, calcined at 650°C for 10 hours to obtain CdCu 3 Ti 4 O 12 Ceramic powder.

[0022] 2. To CdCu 3 Ti 4 O 12 1.0% by mass of silica powder was added to the ceramic powder, and 5-6mm aga...

Embodiment 2

[0024] In this example, to CdCu 3 Ti 4 O 12 Silica powder of 2.0% by mass was added to the ceramic powder, and other steps were the same as those in Example 1 to obtain a silica-doped copper-cadmium titanate giant dielectric ceramic material with high breakdown field strength and energy storage density.

Embodiment 3

[0026] In this example, to CdCu 3 Ti 4 O 12 Silica powder of 4.0% by mass was added to the ceramic powder, and other steps were the same as in Example 1 to obtain a silica-doped copper-cadmium titanate giant dielectric ceramic material with high breakdown field strength and energy storage density.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Breakdown field strengthaaaaaaaaaa
Breakdown field strengthaaaaaaaaaa
Breakdown field strengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a high breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and a preparation method. The ceramic material is prepared from materials shown in CdCu3Ti4O12-x wt%SiO2, wherein x ranges from 1.0 to 4.0, Cd(NO3)2.4H2O, Cu(NO3)2.3H2O and Ti(C4H9O)4 serve as raw materials, glacial acetic acid serves as a chelating agent, precursor powder is prepared through a sol-gel method firstly, the precursor powder is calcined at low temperature, CdCu3Ti4O12 ceramic powder which can be mixed on the molecular level and has good uniformity and high activity is obtained, then silicon dioxide powder is added into the ceramic powder, and the silicon dioxide doped cadmium copper titanate giant dielectric ceramic material can be obtained after ball milling, prilling, tableting, glue discharging and sintering. The ceramic material is simple in preparation method, low in reaction temperature, good in repeatability, high in yield and excellent in dielectric performance. The breakdown field strength can reach up to 895-2,353 V/cm, the energy storage density can reach up to 0.712-1.77 mJ/cm<3>, and wide application prospects are achieved.

Description

technical field [0001] The invention belongs to the technical field of electronic ceramic materials, in particular to a high breakdown field strength and energy storage density silicon dioxide doped copper cadmium titanate giant dielectric ceramic material and a preparation method. Background technique [0002] Energy and the environment are one of the biggest problems and challenges facing the world today. Therefore, how to effectively store energy, reduce energy loss and reduce environmental pressure has been a hot research topic for scientists for more than a decade. Energy storage materials and their technologies are a new type of energy-saving means, playing an increasingly important role in daily life and industrial production. However, most renewable energy sources must first be converted into electrical energy, and although electrical energy can be transported over long distances through cables to where it is needed, there is still a need to develop efficient electri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C04B35/462C04B35/622H01G4/12
CPCC04B35/462C04B35/622C04B2235/3232C04B2235/3241C04B2235/3281C04B2235/3418C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567H01G4/1218H01G4/129H01G4/30
Inventor 晁小练彭战辉杨祖培梁朋飞
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products