PZT-base anti-ferroelectric material based on rolling membrane process and preparation method of PZT-base anti-ferroelectric material

An antiferroelectric and rolling film technology, which is applied in the field of PZT-based antiferroelectric materials and its preparation, can solve the problems of low breakdown field strength, poor internal uniformity, and poor compactness, so as to improve the breakdown field strength, The steps are simple and easy to improve the effect of energy storage density

Inactive Publication Date: 2016-12-07
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the energy storage density of reported antiferroelectric ceramic bulks generally does not exceed 3J/cm 3 , the main preparation method is solid-phase synthesis, due to the large thickness, poor internal uniformity, and low breakdown field strength, the energy storage performance has been unable to improve
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Method used

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  • PZT-base anti-ferroelectric material based on rolling membrane process and preparation method of PZT-base anti-ferroelectric material
  • PZT-base anti-ferroelectric material based on rolling membrane process and preparation method of PZT-base anti-ferroelectric material
  • PZT-base anti-ferroelectric material based on rolling membrane process and preparation method of PZT-base anti-ferroelectric material

Examples

Experimental program
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Effect test

Embodiment 1

[0033]The purity is analytically pure lead oxide, lanthanum oxide, zirconium oxide, tin oxide and titanium oxide, according to the stoichiometric ratio (Pb 0.97 La 0.02 )(Zr 0.29 sn 0.65 Ti 0.06 )O 3 Weigh the ingredients, put the prepared ingredients into the ball mill tank, the ball to material ratio is 3:1, add deionized water to about 2 / 3 of the ball mill tank volume. The ball milling time is 12 hours. After the ball milling, take it out and dry it, pre-burn it at 900°C for 2 hours, then ball mill it again for 12 hours, and sieve. Add 30% binder, first repeat rough rolling on the rolling machine for 1 hour, and finally finish rolling to 0.1mm, cut into square pieces of 10mm*10mm, put in the furnace at 600°C for 4h, and the heating rate is 1°C per minute . Finally, put the biscuit sheet after degumming into the airtight aluminum oxide dry pot, and add an appropriate amount of (Pb 0.97 La 0.02 )(Zr 0.29 sn 0.65 Ti 0.06 )O 3 powder to avoid the loss of lead. Then...

Embodiment 2

[0035] The purity is analytically pure lead oxide, lanthanum oxide, zirconium oxide, tin oxide and titanium oxide, according to the stoichiometric ratio (Pb 0.97 La 0.02 )(Zr 0.26 sn 0.68 Ti 0.06 )O 3 Weigh the ingredients, put the prepared ingredients into the ball mill tank, the ratio of ball to material is 3:1, add deionized water to 2 / 3 of the volume of the ball mill tank. The ball milling time is 12 hours. After the ball milling, take it out and dry it, pre-burn it at 920°C for 2 hours, then ball mill it again for 12 hours, and sieve it. Add 30% binder, first repeat the rough rolling on the film rolling machine for 1.5h, and finally finish rolling to 0.1mm, cut into square pieces of 10mm*10mm, put it in the furnace at 600°C for 4h, the heating rate is 1°C per minute. Finally, put the biscuit sheet after degumming into the airtight aluminum oxide dry pot, and add an appropriate amount of (Pb 0.97 La 0.02 )(Zr 0.26 sn 0.68 Ti 0.06 )O 3 powder to avoid the loss o...

Embodiment 3

[0038] The purity is analytically pure lead oxide, lanthanum oxide, zirconium oxide, tin oxide and titanium oxide, according to the stoichiometric ratio (Pb 0.97 La 0.02 )(Zr 0.5 sn 0.44 Ti 0.06 )O 3 Weigh the ingredients, put the prepared ingredients into the ball mill tank, the ratio of ball to material is 3:1, add absolute ethanol to about 2 / 3 of the volume of the ball mill tank. The ball milling time is 12 hours. After the ball milling, take it out and dry it, pre-burn it at 920°C for 2 hours, then ball mill it again for 12 hours, and sieve it. Add 30% binder, first repeat rough rolling on the rolling machine for 1 hour, and finally finish rolling to 0.1mm, cut into square pieces of 10mm*10mm, put in the furnace at 600°C for 4h, and the heating rate is 1°C per minute . Finally, put the biscuit sheet after degumming into the airtight aluminum oxide dry pot, and add an appropriate amount of (Pb 0.97 La 0.02 )(Zr 0.5 sn 0.44 Ti 0.06 )O 3 powder to avoid the loss o...

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Abstract

The invention relates to a PZT-base anti-ferroelectric material based on a rolling membrane process and a preparation method of the PZT-base anti-ferroelectric material. According to the material, a perovskite structured PZT system is taken as a matrix, La and Sn are utilized for partially replacing Pb and Zr to enter the matrix, and chemical components meet a chemical general formula (Pb[1-a]La2a/3)(Zr1-x-ySnxTiy)O3, wherein a is more than 0 and less than or equal to 0.06, x is more than 0 and less than 1.0, and y is more than 0 and less than 1.0. The preparation method mainly comprises the steps of preparing powder and a binder, carrying out burdening, mixing, rough rolling, finish rolling and film cutting, finally carrying out rubber discharging and sintering, and plating or sputtering different electrodes or laminates according to the requirements. Compared with the prior art, the anti-ferroelectric material has the advantages that the breakdown field strength is very high (more than or equal to 200 kV/cm), the energy storage density is very high (2J/cm<3>-4.2J/cm<3>), the preparation process is simple, the operation is simple and convenient, and the cost is relatively low; and the anti-ferroelectric material is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and relates to a PZT-based antiferroelectric material based on rolling film technology and a preparation method thereof. Background technique [0002] Antiferroelectrics are a kind of ferroelectric materials, and the research on antiferroelectrics is also inseparable from the response of spontaneous polarization to the outside world. Unlike ferroelectrics, antiferroelectrics have zero macroscopic polarization due to the antiparallel arrangement of the spontaneous polarization directions of adjacent sublattices in the structure, but antiferroelectrics can be induced to ferroelectricity under the action of an electric field It has the characteristics of fast discharge speed after removing the electric field. This kind of material has high energy storage density and small dielectric loss, and is considered to be a superior energy storage material. [0003] In terms of energy storage ap...

Claims

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Application Information

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IPC IPC(8): C04B35/491C04B35/622
CPCC04B35/491C04B35/622C04B2235/3227C04B2235/3293C04B2235/768
Inventor 杨同青王修才沈杰
Owner TONGJI UNIV
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