Bipolar integrated circuit chip based on groove dielectric isolation and production technology thereof

Abstract

The invention discloses a bipolar integrated circuit chip based on groove dielectric isolation and a production technology thereof, and belongs to the field of integrated circuit design / manufacturing. The production technology sequentially comprises the steps of N+ buried layer forming, lower isolation area forming, epitaxial layer forming, phosphorus bridge area forming, upper isolation area forming, groove forming and the like. According to the bipolar integrated circuit chip based on groove dielectric isolation, which is manufactured by the production technology, the inner side of an upper isolation area, the outer side of the upper isolation area and the outer side of a base area are respectively provided with an annular groove, the design size is lowered to the high limit, meanwhile, the maximum withstanding voltage of BVCBO is improved, and electrical performance maximization between electrodes within minimum spacing is achieved.

Description

technical field [0001] The invention relates to a bipolar integrated circuit chip based on trench dielectric isolation and a production process thereof, belonging to the field of integrated circuit design / manufacture. Background technique [0002] At present, most conventional bipolar IC products use the upper and lower PN junction-to-connection isolation process to isolate the islands from each other. Although the lateral diffusion size of the upper isolation is reduced, in high-voltage products, such as figure 1 As shown in the cross-sectional view of a conventional bipolar IC product, due to the thicker epitaxial layer, the lateral distance A between the upper isolation and the phosphorus bridge is still relatively wide, while the phosphorus bridge in the island is to the upper isolation (distance a), and the phosphorus bridge to the base region (distance b), the base region to the upper isolation (distance c) still rely on lateral dimensions to achieve mutual electrical ...

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Problems solved by technology

The thicker the epitaxy, the larger the size of its lateral diffusion, which seriously increases the design size of the product, which is not conducive to reducing the processing cost

[0003] In addition, due to the upper isolation, phosphorus bridge, and base area after high-temperature diffusion, the lateral diffusion distance is about 80% of the vertical junction depth, so the dimension A / B / C on the layout design becomes the actual spacing a / b / c after diffusion ,from figure 1 It can be clearly found that the deeper the vertical junction, the smaller the lateral pitch size will actually become. Since the internal electrodes of the final device, such as BVCS / BVCBO / BVBS, are completely determined by the size of the lateral pitch a / b / c, the epitaxy The thicker the product, the higher the voltage. There must be a sufficient safety distance between the electrodes to ensure that the electrical performance requirements of the product are met. However, in this way, the layout area will become larger and the cost of a single die will become higher and higher. , competitiveness will drop!

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