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Manufacturing method of groove MOSFET device based on microwave plasma oxidation

A technology of microwave plasma and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor stability of bottom gate oxide, inability to obtain forward characteristics, and abnormal operation of devices, etc. Achieve the effects of reducing electron defects, increasing effective mobility, and improving oxidation efficiency

Pending Publication Date: 2020-12-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, due to the thermal oxidation growth of SiO on the sidewall 2 The rate is several times that of the bottom oxidation rate, which makes the device unable to turn on when the gate voltage of the device reaches the maximum safe operating voltage of the gate oxide, and the channel region on the sidewall cannot be turned on because the gate voltage does not reach the threshold voltage, and the forward characteristic cannot be obtained. If the gate voltage continues to increase, the stability of the bottom gate oxide will deteriorate, causing premature breakdown of the bottom oxide layer, and the device cannot work normally.

Method used

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  • Manufacturing method of groove MOSFET device based on microwave plasma oxidation
  • Manufacturing method of groove MOSFET device based on microwave plasma oxidation
  • Manufacturing method of groove MOSFET device based on microwave plasma oxidation

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Embodiment 1

[0068] Such as Figure 6 As shown, the preparation method of the groove MOSFET device generally includes the following steps:

[0069] (1) cleaning the substrate;

[0070] (2) Forming a P-base implantation mask and ion implantation on the substrate;

[0071] (3) Form N-plus mask and ion implantation;

[0072] (4) Forming the P-base and removing the corresponding mask;

[0073] (5) Forming N-plus and removing the corresponding mask;

[0074] (6) Forming a P-plus mask and ion implantation;

[0075] (7) High temperature activation annealing;

[0076] (8) Forming P-plus and removing the corresponding mask;

[0077] (9) forming a groove gate etching mask;

[0078] (10) Groove gate etching;

[0079] (11) forming a groove gate oxide layer;

[0080] (12) making a polysilicon gate electrode;

[0081] (13) making the source electrode;

[0082] (14) making the drain electrode;

[0083] (15) making interlayer medium;

[0084] (16) Make the cover metal.

[0085] In this embod...

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Abstract

A manufacturing method of a groove MOSFET device based on microwave plasma oxidation comprises the step that after a groove gate is etched, silicon carbide on the surface of the groove gate is oxidized into silicon dioxide through microwave plasma to form a groove gate oxide layer. The step of forming the groove gate oxide layer comprises the steps as follows: placing a silicon carbide substrate subjected to groove gate etching in a microwave plasma generating device; introducing oxygen-containing gas to generate oxygen plasma; reacting the oxygen plasma with silicon carbide to generate silicon dioxide with a preset thickness; and stopping introducing the oxygen-containing gas, and ending the reaction; wherein the reaction temperature of the oxygen plasma and the silicon carbide is 500-900DEG C, and the reaction pressure is 400-1000 mTorr. The oxidation efficiency of silicon carbide can be remarkably improved, the interface quality is improved, and a uniform gate dielectric layer is formed.

Description

[0001] This application belongs to a divisional application, and the application number of its parent case is: 201810521159.6, the application date is: May 25, 2018, and the title of the invention is: a method for manufacturing groove MOSFET devices based on microwave plasma oxidation. technical field [0002] The invention belongs to the technical field of semiconductors, and in particular relates to a method for manufacturing a groove MOSFET device based on microwave plasma oxidation. Background technique [0003] Silicon carbide (SiC) is the third-generation semiconductor-wide bandgap semiconductor material. It has the advantages of large bandgap width, high critical breakdown field strength, and high thermal conductivity. It is an ideal material for making high-voltage and high-power semiconductor devices. SiC power Electronic devices are at the heart of next-generation high-efficiency power electronics technology. Compared with Si MOSFETs, SiC MOSFETs have smaller on-re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28
CPCH01L21/28211H01L29/66068
Inventor 刘新宇汤益丹王盛凯白云杨成樾
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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