Junction termination structure of transverse high-voltage power device
A power device, lateral high voltage technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of electric field curvature effect and charge imbalance at the connection, and optimize the breakdown voltage and charge imbalance. Improve and alleviate the problem The effect of the curvature effect
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Embodiment 1
[0037] Such as Figure 5 As shown, the structure of this example includes a linear knot terminal structure and a curvature knot terminal structure;
[0038] The linear junction terminal structure is the same as that of the active region of the lateral high-voltage power device, including the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source N + Contact area 7, source P + Contact region 8, P-type buried layer 9; P-well region 6 and N-type drift region 2 are located on the upper layer of P-type substrate 3, wherein P-well region 6 is located in the middle, with N-type drift region 2 on both sides, and P- The well region 6 is connected to the N-type drift region 2; the two sides of the N-type drift region 2 away from the P-well region 6 are the drain N + The surface of the contact region 1, the P-well region 6 has a source N connected to the metallized source + contact area 7 and the source P...
Embodiment 2
[0043] Such as Image 6 As shown, the difference between this example and Example 1 is that in this example, the junction of the P-type buried layer 9 in the linear junction termination structure and the P-type buried layer 9 in the curvature junction termination structure is located in the N-type drift region 2. The principle Same as Example 1.
Embodiment 3
[0045] Such as Figure 7 As shown, the difference between this example and Embodiment 1 is that the inner wall of the P-type buried layer 9 in the direct junction termination structure coincides with the inner wall of the N-type drift region 2 in the direct junction termination structure, and the P-type buried layer 9 in the curvature junction termination structure The inner wall is located in the P-type substrate 3, and the inner wall of the P-type buried layer 9 in the curvature junction terminal structure extends to the middle to connect with the inner wall of the P-type buried layer 9 in the direct junction termination structure. A circle, then a straight line with a distance of e, and finally a circular arc with a counterclockwise radius of one-twelfth of r1 to connect with the inner wall of the P-type buried layer 9 in the direct junction terminal structure; in the curvature junction terminal structure The distance between the inner wall of the ring-shaped P-type buried ...
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