Junction terminal structure of transverse high-voltage power device

A power device, lateral high voltage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as charge imbalance and electric field curvature effect at the connection, improve the problem of charge imbalance, optimize breakdown voltage, and alleviate Effect of Curvature Effect

Active Publication Date: 2015-11-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve is to propose a junction terminal structure of a lateral high-voltage power device in view of the defects of the traditional device charge imbalance and the curvature effect of the electric field at the connection

Method used

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  • Junction terminal structure of transverse high-voltage power device
  • Junction terminal structure of transverse high-voltage power device
  • Junction terminal structure of transverse high-voltage power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] like Figure 5 As shown, the structure of this example includes a linear knot terminal structure and a curvature knot terminal structure;

[0028] The linear junction terminal structure is the same as that of the active region of the lateral high-voltage power device, including the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source N + Contact area 7, source P + Contact region 8, P-type buried layer 9; P-well region 6 and N-type drift region 2 are located on the upper layer of P-type substrate 3, wherein P-well region 6 is located in the middle, with N-type drift region 2 on both sides, and P- The well region 6 is connected to the N-type drift region 2; the two sides of the N-type drift region 2 away from the P-well region 6 are the drain N + The surface of the contact region 1, the P-well region 6 has a source N connected to the metallized source + contact area 7 and the source P +...

Embodiment 2

[0033] like Figure 6 As shown, the difference between this example and Example 1 is that the inner wall of the ring-shaped P-type buried layer 9 in the curvature junction termination structure in this example is located in the P-type substrate 3 , and the principle is the same as that of Example 1.

Embodiment 3

[0035] like Figure 7 As shown, the difference between this example and Example 2 is that in this example, the junction of the P-type buried layer 9 in the linear junction termination structure and the P-type buried layer 9 in the curvature junction termination structure is located in the N-type drift region 2. The principle Same as Example 2.

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Abstract

The invention belongs to the technical field of a semiconductor, in particular relates to a junction terminal structure of a transverse high-voltage power device. In the structure, the inner wall of an N-type shift region 2 and the inner wall of a P-type buried layer 9 in a curvature junction terminal structure respectively extend to the middle until to be connected with the inner wall of an N-type shift region 2 and the inner wall of a P-type buried layer 9 in a direct junction terminal structure, included angles of Alpha degrees are generated between the extension directions and the vertical directions of the inner walls of the N-type shift region 2 and the P-type buried layer 9 in the direct junction terminal structure, and the Alpha degrees is 45 degrees. By the junction terminal structure, the curvature effect of an electric field at a connection part can be effectively relieved; and on the vertical direction of the extension direction at the connection part, the distance of the P-type buried layer 9 exceeding the N-type shift region is 5 micrometers, and thus, the problem of charge unbalance is solved. The junction terminal structure has the advantages that the problems of charge unbalance in the connection part between the direct junction terminal structure and the curvature junction terminal structure and the curvature effect of the electric field at the connection part are solved, a device is prevented from being broken down in advance, and thus, optimal breakdown voltage is obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and the interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, and the electric field lines are easy to concentrate at the small curvature radius, which will lead to early avalanche breakdown of the device at the small curvature radius , which poses new challenges to the layout structure of lateral high-voltage power devices. [0003] The Chinese patent with the publication number CN10224...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78
CPCH01L29/0619H01L29/7823
Inventor 乔明王裕如张晓菲代刚方冬张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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