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Making method for IV-VI semiconductor single crystal film and the heterogeneous structure

A single crystal thin film, heterostructure technology, applied in semiconductor/solid state device manufacturing, chemical instruments and methods, single crystal growth and other directions, can solve the problem of inability to precisely control the growth of quantum wells and superlattice structures, and achieve smooth surface. No cracks, low manufacturing cost, precise and controllable thickness

Inactive Publication Date: 2008-01-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is only the growth of IV-VI semiconductor polycrystalline and single crystal thin film materials of binary system, and cannot precisely control the growth of IV-VI semiconductor single crystal thin film materials of ternary system and quaternary system and its quantum well and superlattice structure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] BaF 2 Growth of PbSe Single Crystal Thin Films on (111) Substrates

[0027] ●BaF 2 The substrate is placed in a vertical laminar flow purification workbench, cleaved along the (111) plane, and blown off with high-purity nitrogen;

[0028] ●BaF 2 The substrate is mounted on the sample holder, and loaded into the sample chamber, and vacuumed to ≤5×10 -5 After Pa, heat the substrate to degas at 150-200°C for 30 minutes;

[0029] ●BaF 2 The substrate is transferred into the preparation chamber with a magnetic transfer rod at room temperature, and the substrate is heated to 350°C in ultra-high vacuum for 30 minutes to degas;

[0030] ●To degas the PbSe beam source furnace, raise the temperature of the PbSe beam source furnace to about 700°C (the specific temperature depends on the growth rate), and degas the beam source furnace at 15°C higher than the growth beam temperature for 10 minutes, use an ion gauge The molecular beam current is measured, the beam size determin...

Embodiment 2

[0037] BaF 2 (111) Epitaxial PbMnSe Single Crystal Thin Films on Substrates

[0038] BaF 2 The substrate is placed in a vertical laminar flow purification bench, cleaved along the (111) plane, and blown with high-purity nitrogen.

[0039] BaF 2 The substrate is mounted on the sample holder, and loaded into the sample chamber, and vacuumed to ≤5×10 -5 After Pa, heat to degas the substrate at 150-200°C for 30 minutes.

[0040] BaF 2 The substrate was transferred into the preparation chamber with a magnetic transfer rod at room temperature, and the substrate was heated to 350 °C for 30 minutes in ultra-high vacuum to degas.

[0041] Degas the PbSe beam source furnace, raise the temperature of the PbSe beam source furnace to about 700°C, and degas the beam source furnace at 15°C higher than the growth beam temperature for 10 minutes, measure the molecular beam current with an ion gauge, and the beam size determines The growth rate is controlled by adjusting the temperature o...

Embodiment 3

[0049] BaF 2 (111) Epitaxial PbSe / PbSrSe Multiple Quantum Wells on Substrate

[0050] BaF 2 The substrate is placed in a vertical laminar flow purification bench, cleaved along the (111) plane, and blown with high-purity nitrogen.

[0051] BaF 2 The substrate is mounted on the sample holder, and loaded into the sample chamber, and vacuumed to ≤5×10 -5 After Pa, heat to degas the substrate at 150-200°C for 30 minutes.

[0052] BaF 2 The substrate was transferred into the preparation chamber with a magnetic transfer rod at room temperature, and the substrate was heated to 350 °C for 30 minutes in ultra-high vacuum to degas.

[0053] Degas the PbSe beam source furnace, raise the temperature of the PbSe beam source furnace to about 700°C, and degas the beam source furnace at 15°C higher than the growth beam temperature for 10 minutes, measure the molecular beam current with an ion gauge, and the beam size determines The growth rate is controlled by adjusting the temperature ...

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Abstract

The invention discloses a method to produce IV-VI semiconductor single-crystal thin film and the hetero-structure thereof. Under the condition of accurately controlled ultra-high vacuum, IV-VI atom and molecular beams vaporized from a beam source furnace encounter a clean single-crystal liner surface with good crystal surface orientation, and atom and molecular reaching the surface of the liner form high-quality single-crystal thin film after processes such as attachment, transition, and crystallization on the surface of liner. Through the accurate control of growth conditions, such as beam runoff and linear temperature, extended IV-VI compounds grow on the surface of linear by a molecular layer and a molecular layer. The method can grow IV-VI semiconductor hetero-structures, including quantum-well and super-lattice. The production cost is low, and the quality is high.

Description

technical field [0001] The invention belongs to the technical field of epitaxial preparation of semiconductor single crystal thin films, and in particular relates to a molecular beam epitaxial growth technology for growing high-quality IV-VI group narrow bandgap semiconductor single crystal thin films on different substrate materials at room temperature. Background technique [0002] In recent years, optoelectronic devices such as mid-infrared lasers and mid-infrared detectors developed by IV-VI semiconductors have application prospects in important fields such as environmental detection, toxic gas monitoring, biomedicine, and national defense, making IV-VI semiconductor materials a research field. hotspot. Group IV-VI semiconductor materials are narrow-bandgap semiconductor materials with unique physical properties such as direct bandgap, high energy band symmetry, and low Auger recombination rate, and they have the characteristics of high luminous efficiency, large dielect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/363C30B23/02
Inventor 吴惠桢斯剑霄徐天宁夏明龙
Owner ZHEJIANG UNIV
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