Combinatorial synthesis of material chips
a technology of material chips and synthesis, applied in the direction of chemical libraries, ion implantation coatings, chemical vapor deposition coatings, etc., can solve the problems of inconvenient synthesis, inability to form true multi-composition compounds, and inability to understand the situ approach, etc., and achieve the effect of relatively simple target exchang
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[0018]FIG. 1 schematically illustrates an embodiment of the invention that uses ion beam sputtering as part of a combinatorial synthesis of a desired material. A substrate 11 is positioned inside an ultra-high vacuum chamber 13, preferably having a pressure level of 10−9 Torr or lower, using a cryogenic pump, ion pump or other pump means (not shown) suitable for metal alloy deposition. Preferably, a load-and-lock chamber 15 is provided to facilitate sample exchange without breaking the vacuum of the main chamber 13. A sputtering target 17 receives an ion beam 19, provided by an ion source 21, and produces deposition or precursor particles DP having a desired chemical composition. A portion of the precursor particles DP is received at, and deposited on, an exposed surface of the substrate 11. Growth rate of the deposited layer on the substrate 11 can be controlled, within a high precision range, by the power applied to the ion beam sputtering source 21 and by the angular orientation ...
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