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Combinatorial synthesis of material chips

a technology of material chips and synthesis, applied in the direction of chemical libraries, ion implantation coatings, chemical vapor deposition coatings, etc., can solve the problems of inconvenient synthesis, inability to form true multi-composition compounds, and inability to understand the situ approach, etc., and achieve the effect of relatively simple target exchang

Inactive Publication Date: 2005-08-04
INTEMATIX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Enables the formation of complex compounds with precise control over composition and growth rates, reducing interdiffusion temperatures and times, and allowing for the formation of oxides, nitrides, and other substances, while maintaining purity and flexibility in deposition patterns.

Problems solved by technology

However, a true multi-composition compound probably cannot be formed unless each multilayer is formed and uniformly diffused at relatively low temperatures.
This appears to require an in situ approach, which is not well understood and is not developed in the background art.

Method used

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  • Combinatorial synthesis of material chips
  • Combinatorial synthesis of material chips
  • Combinatorial synthesis of material chips

Examples

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Embodiment Construction

[0018]FIG. 1 schematically illustrates an embodiment of the invention that uses ion beam sputtering as part of a combinatorial synthesis of a desired material. A substrate 11 is positioned inside an ultra-high vacuum chamber 13, preferably having a pressure level of 10−9 Torr or lower, using a cryogenic pump, ion pump or other pump means (not shown) suitable for metal alloy deposition. Preferably, a load-and-lock chamber 15 is provided to facilitate sample exchange without breaking the vacuum of the main chamber 13. A sputtering target 17 receives an ion beam 19, provided by an ion source 21, and produces deposition or precursor particles DP having a desired chemical composition. A portion of the precursor particles DP is received at, and deposited on, an exposed surface of the substrate 11. Growth rate of the deposited layer on the substrate 11 can be controlled, within a high precision range, by the power applied to the ion beam sputtering source 21 and by the angular orientation ...

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Abstract

Systems and methods for providing in situ, controllably variable concentrations of one, two or more chemical components on a substrate to produce an integrated materials chip. The component concentrations can vary linearly, quadratically or according to any other reasonable power law with one or two location coordinates. In one embodiment, a source and a mask with fixed or varying aperture widths and fixed or varying aperture spacings are used to produce the desired concentration envelope. In another embodiment, a mask with one or more movable apertures or openings provides a chemical component flux that varies with location on the substrate, in one or two dimensions. In another embodiment, flow of the chemical components through nuzzle slits provides the desired concentrations. An ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source and / or an evaporative source can provide the chemical component(s) to be deposited on the substrate. Carbides, nitrides, oxides, halides and other elements and compounds can be added to and reacted with the deposits on the substrate.

Description

FIELD OF THE INVENTION [0001] This invention relates to methods and systems for deposition of chemicals in controllably variable amounts on a substrate. BACKGROUND OF THE INVENTION [0002] In the past decade, several workers have applied a combinatorial synthesis approach to development of new materials, or to construction of known materials in new ways. Material chip samples, with varying chemical compositions involving two or three components and with discrete or continuous composition change, can, in principle, be synthesized, using multilayers and masks. However, a true multi-composition compound probably cannot be formed unless each multilayer is formed and uniformly diffused at relatively low temperatures. This appears to require an in situ approach, which is not well understood and is not developed in the background art. [0003] What is needed is an in situ approach and / or a multilayer approach for formation of chemical compounds having two, three or more components and having ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B01J19/00B05D1/32B05D1/34B05D7/24C23C14/04C22C1/00C23C14/54C23C16/04C23C16/44C23C16/455C23C16/52C40B40/18C40B60/14
CPCB01J19/0046C23C16/042B01J2219/00441B01J2219/00443B01J2219/00445B01J2219/00527B01J2219/00585B01J2219/0059B01J2219/00592B01J2219/00605B01J2219/00659B01J2219/00745B01J2219/0075B01J2219/00752B01J2219/00754B01J2219/00756B05D1/32B05D1/34B05D1/60C23C14/044C23C16/04C23C16/45563C40B40/18C40B60/14C23C14/042B01J2219/0043
Inventor LI, YI-QUN
Owner INTEMATIX
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