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Monolithically-integrated multi-functional ultraviolet/solar blind ultraviolet two-color detector and fabrication method thereof

A dual-color detector, monolithic integration technology, applied in the direction of photometry, ultraviolet measurement, semiconductor devices, etc. using electrical radiation detectors, which can solve the problem of increasing the size of the detector, affecting the convenience, increasing the complexity of the detector and increasing the manufacturing cost and other problems, to achieve the effect of convenient carrying, sensitive response and stable performance

Active Publication Date: 2016-08-17
东港智科产业园有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In many cases, multi-functionality often requires the addition of additional devices or devices. These accessories increase the complexity and manufacturing cost of the detector, and also increase the volume of the detector, which affects the convenience of use.

Method used

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  • Monolithically-integrated multi-functional ultraviolet/solar blind ultraviolet two-color detector and fabrication method thereof
  • Monolithically-integrated multi-functional ultraviolet/solar blind ultraviolet two-color detector and fabrication method thereof
  • Monolithically-integrated multi-functional ultraviolet/solar blind ultraviolet two-color detector and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Proceed as follows:

[0029] 1) Put the n-type 4H-SiC substrate into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0030] 2) put Ga 2 o 3 The target is placed on the target stage of the laser molecular beam epitaxy system, and the n-type 4H-SiC substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0031] 3) Vacuum the cavity, feed oxygen, adjust the pressure in the vacuum cavity, heat the n-type 4H-SiC substrate, and grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 4H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, when heating the ...

Embodiment 2

[0035] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 4H-SiC substrate is heated to grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 4H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, when heating the n-type 4H-SiC substrate, the cavity pressure is 1×10 -3 Pa, β-Ga 2 o 3 When the film is annealed in situ, the cavity pressure is 1Pa, and the laser energy is 5J / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 4H-SiC substrate is 700℃, β-Ga 2 o 3 The annealing temperature of the film is 750° C., and the annealing tim...

Embodiment 3

[0038] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 4H-SiC substrate is heated to grow β-Ga 2 o 3 thin film, after the growth of the thin film is completed, continue to feed oxygen, adjust the pressure in the vacuum chamber, and the obtained β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 4H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, when heating the n-type 4H-SiC substrate, the cavity pressure is 1×10 -3 Pa, β-Ga 2 o 3 When the film is annealed in situ, the cavity pressure is 1.5Pa, and the laser energy is 5J / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 4H-SiC substrate is 750℃, β-Ga 2 o 3 The annealing temperature of the film is 750° C., and the annealing t...

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Abstract

The invention relates to an ultraviolet / solar blind ultraviolet two-color detector, in particular to a monolithically-integrated multi-functional ultraviolet / solar blind ultraviolet two-color detector and a fabrication method thereof. A layer of gallium oxide thin film is deposited on a silicon carbide substrate by a laser molecular beam epitaxial technology, and then a layer of titanium / gold thin film is deposited on the silicon carbide substrate and the gallium oxide thin film by a mask plate through a radio frequency magnetron sputtering technology to be used as an electrode. The monolithically-integrated multi-functional two-color ultraviolet detector fabricated according to the method has the advantages of reaction sensitivity, performance stability and low dark current, the functions of ultraviolet flame detection and ultraviolet intensity detection of a solar blind region can be separately achieved in different voltage modes, and the monolithically-integrated multi-functional two-color ultraviolet detector can be used for detecting fire alarm, high-voltage line corona and solar ultraviolet intensity; and moreover, the fabrication method has the characteristics of high process controllability, high universality, restorability of repeated tests and great application prospect, and is simple to operate.

Description

technical field [0001] The invention relates to an ultraviolet / solar-blind ultraviolet dual-color detector, in particular to a single-chip integrated multifunctional ultraviolet / solar-blind ultraviolet dual-color detector and a preparation method thereof. technical background [0002] The ozone layer has a maximum absorption coefficient at 200‐320nm and reaches a maximum value at 255.3nm. Due to the strong absorption of the ozone layer, the solar background in this band in the near-surface troposphere is lower than 10‐13W / m 2 , there is almost no such ultraviolet band near the ground, so we call the ultraviolet within this wavelength the solar blind zone. The detection of the solar blind area can not only avoid sunlight interference, but also has extremely low background noise. Compared with infrared detection, it has the characteristics of low noise, all-weather work, and anti-interference. [0003] Because high-voltage line corona, space, missile plume and flames all con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/032H01L31/109H01L31/18G01J1/42
CPCG01J1/429H01L31/028H01L31/032H01L31/109H01L31/1804Y02E10/547Y02P70/50
Inventor 张权岳
Owner 东港智科产业园有限公司
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