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44results about How to "Improve shape" patented technology

Method for evaluating microcrack initiation of magnesium alloy

The invention discloses a method for evaluating microcrack initiation of magnesium alloy. The method includes the following steps that an in-situ tension method is adopted for acquiring the data of an in-situ scanning electron microscope (SEM) and the data of in-situ electron back scattering diffraction (EBSD); according to the data of the in-situ SEM and the data of the in-situ EBSD, the eulerian angles representing grain orientation information are acquired; in accordance with the eulerian angles, the crack initiation parameter F1 is calculated, and the possible microcrack initiation position is predicted. According to the method for evaluating the microcrack initiation of the magnesium alloy, the in-situ EBSD method is adopted so that slipping and twinning information in grains and microcrack initiation in the uniaxial drawing process of the magnesium alloy can be observed dynamically; the correlation between microcrack initiation on the grain boundary and the orientation and stress direction of surrounding grains can be evaluated comprehensively through calculation of the crack initiation parameter F1; the nucleation and the happening position of microcracks can be accurately predicted through calculation of the F1 value, and it is of great significance to improve the plasticity of the magnesium alloy.
Owner:SHANGHAI JIAO TONG UNIV

Preparation method for Perovskite-MoS2 bulk heterojunction type perovskite solar cell

The invention discloses a preparation method for a Perovskite-MoS2 bulk heterojunction type perovskite solar cell. The preparation method specifically comprises the following steps that 1) a PEDOT:PSShole transport layer is prepared; 2) a MoS2 buffer layer is prepared; 3) a Perovskite-MoS2 bulk heterojunction photoactivation layer is prepared; 4) a PCBM electron transport layer is prepared; 5) aBphen hole blocking layer is prepared; and 6) evaporation preparation of an Ag electrode is carried out. According to the preparation method, the Perovskite-MoS2 bulk heterojunction structure is usedas the perovskite photoactivation layer, so that the morphology of the perovskite photoactivation layer can be improved, in addition, the energy level match of the perovskite photoactivation layer andthe PEDOT:PSS hole transport layer can be adjusted, meanwhile, MoS2 is used as the buffer layer, so that the extraction and transmission of holes by PEDOT:PSS can be effectively promoted, and therefore the performance of the perovskite solar cell can be improved to a great extent. The preparation method has the advantages of being simple to operate and low in cost, too high condition limitation is not needed in the preparation process, and a prepared solar cell device has good photoelectric performance.
Owner:HENAN NORMAL UNIV

Method and structure for improving luminous efficiency of green light wavelength or longer wavelength InGaN quantum well

The invention discloses a method and a structure for improving luminous efficiency of a green light wavelength or longer wavelength InGaN quantum well. The method comprises the following steps of adopting a substrate with atomic steps, wherein a chamfer angle formed between the adjacent atomic steps on the substrate is greater than 0.2 degrees; forming a buffer layer on the atomic step surfaces; forming a high-temperature n type GaN layer on the buffer layer; and forming the InGaN quantum well on the high-temperature n type GaN layer. According to the method for improving the luminous efficiency of the InGaN quantum well by adopting the large-chamfer-angle substrate, an active region of the green light wavelength or longer wavelength InGaN quantum well is grown on the substrate with the chamfer angle greater than 0.2 degrees, so that atomic step flow growth of the green light wavelength or longer wavelength InGaN quantum well can be realized, the morphology can be improved, and the internal quantum efficiency of the InGaN quantum well can be improved. In addition, the InGaN quantum well prepared by the above method can be widely applied to a GaN-based green light wavelength or longer wavelength LED or a GaN-based green light wavelength or longer wavelength laser, and also can be widely applied to a multi-quantum-well solar cell.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Annealing method for photo-anode of perovskite solar cell

The invention discloses an annealing method for a photo-anode of a perovskite solar cell, relates to the annealing method for the photo-anode of the perovskite solar cell, aims at solving the technical problems an existing annealing method for the photo-anode of the perovskite solar cell cannot well control the shape and form of a perovskite light absorbent, and is relatively multiple in defect states, excessive residues of reactants in crystal and the like. According to the annealing method, when the photo-anode of the perovskite solar cell is heated and annealed on a heating stage, a perovskite light absorbent layer of the photo-anode of the perovskite solar cell directly contacts the heating stage for annealing. The annealing method has the advantages that solvents and unreacted materials left in the crystal and on the surface can be effectively utilized in the annealing process of the perovskite light absorbent; and improvement of the shape and form of the perovskite crystal is promoted, so that partial residual reactants further react completely in the annealing process; the damage to the crystal caused by excessive solvents in a solvent-assisted annealing method is avoided; and the annealing method is applied to preparation of the perovskite solar cell.
Owner:HARBIN INST OF TECH

Preparation method of superfine spherical zirconium powder capable of realizing size grading

The invention discloses a preparation method of superfine spherical zirconium powder capable of realizing size grading. Based on a hydrogenation dehydrogenation principle, zirconium hydride powder is firstly prepared, temperature-controllable plasma is adopted to heat the zirconium hydride powder for dehydrogenation, the zirconium powder is crushed under the action of gas explosion, and meanwhile, the crushed zirconium powder is subjected to plasma spheroidizing treatment to prepare the spherical zirconium powder. The zirconium powder subjected to plasma dehydrogenation spheroidization is further dehydrogenated under the protection of high-temperature inert gas, the zirconium powder is graded by using the inert gas, and the graded zirconium powder is directly conveyed into a reaction container filled with a passivation reagent for in-situ passivation treatment, so that the passivated spherical zirconium powder with different particle sizes is obtained. The technical problems that the zirconium powder prepared by a hydrogenation dehydrogenation method is irregular in morphology, coarse in particle size, difficult to classify, easy to oxidize, long in technological process and the like are solved, and the preparation cost of the zirconium powder can be reduced.
Owner:江苏智仁景行新材料研究院有限公司
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