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Preparation method for Perovskite-MoS2 bulk heterojunction type perovskite solar cell

A solar cell and bulk heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems affecting the effective transport of photogenerated carriers and the inappropriate energy level matching of the hole transport layer. The effect of good photoelectric conversion efficiency, promotion of extraction and transmission, and good photoelectric performance

Active Publication Date: 2018-09-25
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single perovskite layer prepared by the solution spin coating method has large defects due to the influence of heating and annealing, and the energy level matching with the hole transport layer is not suitable enough, which affects the effective transport of photogenerated carriers.

Method used

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  • Preparation method for Perovskite-MoS2 bulk heterojunction type perovskite solar cell
  • Preparation method for Perovskite-MoS2 bulk heterojunction type perovskite solar cell
  • Preparation method for Perovskite-MoS2 bulk heterojunction type perovskite solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step S100: preparing a PEDOT:PSS hole transport layer, the specific steps are:

[0036] Step S101: Place the cleaned and dried ITO glass on a homogenizer, uniformly coat the PEDOT:PSS aqueous solution on the ITO glass with a pipette gun and perform spin coating to obtain the precursor film of the PEDOT:PSS hole transport layer, spin coating The rotating speed is 2000 rpm, and the spin coating time is 50 seconds;

[0037] Step S102: Place the ITO substrate of the spin-coated precursor film treated in step S101 on a heating table, and continue annealing at 120° C. for 15 minutes in an air environment to obtain a PEDOT:PSS hole transport layer with uniform thickness;

[0038] Step S200: Prepare MoS 2 The buffer layer, the specific steps are:

[0039] Step S201: black powder MoS 2 Dissolved with DMF to prepare MoS with a concentration of about 5wt% 2 Buffer layer precursor solution;

[0040] Step S202: Transfer the ITO substrate grown with the PEDOT:PSS hole transport ...

Embodiment 2

[0057] Step S100: preparing a PEDOT:PSS hole transport layer, the specific steps are:

[0058] Step S101: Place the cleaned and dried ITO glass on a homogenizer, uniformly coat the PEDOT:PSS aqueous solution on the ITO glass with a pipette gun and perform spin coating to obtain the precursor film of the PEDOT:PSS hole transport layer, spin coating The rotating speed is 2500 rpm, and the spin coating time is 40 seconds;

[0059] Step S102: placing the ITO substrate of the spin-coated precursor film treated in step S101 on a heating table, and continuously annealing at 120° C. for 20 minutes in an air environment to obtain a PEDOT:PSS hole transport layer with uniform thickness;

[0060] Step S200: Prepare MoS 2 The buffer layer, the specific steps are:

[0061] Step S201: black powder MoS 2 Dissolved with DMF to prepare MoS with a concentration of about 5wt% 2 Buffer layer precursor solution;

[0062] Step S202: Transfer the ITO substrate grown with the PEDOT:PSS hole tran...

Embodiment 3

[0079] Step S100: preparing a PEDOT:PSS hole transport layer, the specific steps are:

[0080] Step S101: Place the cleaned and dried ITO glass on a homogenizer, uniformly coat the PEDOT:PSS aqueous solution on the ITO glass with a pipette gun and perform spin coating to obtain the precursor film of the PEDOT:PSS hole transport layer, spin coating The rotating speed is 2500 rpm, and the spin coating time is 30 seconds;

[0081] Step S102: Place the ITO substrate of the spin-coated precursor film processed in step S101 on a heating table, and continue annealing at 130° C. for 15 minutes in an air environment to obtain a PEDOT:PSS hole transport layer with uniform thickness;

[0082] Step S200: Prepare MoS 2 The buffer layer, the specific steps are:

[0083] Step S201: black powder MoS 2 Dissolved with DMF to prepare MoS with a concentration of about 5wt% 2 Buffer layer precursor solution;

[0084] Step S202: Transfer the ITO substrate grown with the PEDOT:PSS hole transpor...

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Abstract

The invention discloses a preparation method for a Perovskite-MoS2 bulk heterojunction type perovskite solar cell. The preparation method specifically comprises the following steps that 1) a PEDOT:PSShole transport layer is prepared; 2) a MoS2 buffer layer is prepared; 3) a Perovskite-MoS2 bulk heterojunction photoactivation layer is prepared; 4) a PCBM electron transport layer is prepared; 5) aBphen hole blocking layer is prepared; and 6) evaporation preparation of an Ag electrode is carried out. According to the preparation method, the Perovskite-MoS2 bulk heterojunction structure is usedas the perovskite photoactivation layer, so that the morphology of the perovskite photoactivation layer can be improved, in addition, the energy level match of the perovskite photoactivation layer andthe PEDOT:PSS hole transport layer can be adjusted, meanwhile, MoS2 is used as the buffer layer, so that the extraction and transmission of holes by PEDOT:PSS can be effectively promoted, and therefore the performance of the perovskite solar cell can be improved to a great extent. The preparation method has the advantages of being simple to operate and low in cost, too high condition limitation is not needed in the preparation process, and a prepared solar cell device has good photoelectric performance.

Description

technical field [0001] The invention belongs to the technical field of design and preparation of perovskite solar cells, in particular to a Perovskite-MoS 2 Fabrication method of bulk heterojunction perovskite solar cells. Background technique [0002] In the current environment of rapid technological development, human beings use more and more energy, especially electric energy, and electric energy mainly comes from coal-based thermal power generation. The resulting environmental problems are becoming more and more serious. Finding clean energy is the solution necessary approach to this problem. Although wind power, hydropower and geothermal power are environmentally friendly, they are greatly affected by the conditions of use. Solar cells, based on the principle of photovoltaic special effects, can convert light energy into electrical energy for people to use. Perovskite solar cells have attracted much attention due to their facile fabrication process. After rapid deve...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/30Y02E10/549
Inventor 刘志勇刘凯凯段君杰刘鹏飞虞登吉
Owner HENAN NORMAL UNIV
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