569results about How to "Form evenly" patented technology

In the semiconductor device of the present invention, a plurality of dummy patterns are formed in a grid arrangement in the scribe line areas of a wafer, and a plurality of dummy patterns are formed in a diagonally forward skipped arrangement in the chip interior areas of the wafer. Altering the arrangement of dummy patterns in the chip interior areas and scribe line areas in this way enables formation of dummy patterns with greater uniformity in the chip interior areas and enables formation of dummy patterns with greater resistance to loss that occurs when dicing in scribe line areas.

The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.

The method of the present invention for producing a urethane-based thermoplastic elastomer composition foam comprises the steps of:

• • adding and mixing 0.1 to 30 parts by weight of carbon dioxide (B) to 100 parts by weight of a urethane-based thermoplastic elastomer composition (A) in a molten state, wherein said urethane-based thermoplastic elastomer composition (A) comprises a urethane-based thermoplastic elastomer (A-1) and other thermoplastic elastomer (A-2) in an (A-1)/(A-2) ratio of 20/80 to 99/1 by weight, to form a molten urethane-based thermoplastic elastomer composition (C) which is in a state of a mixture of the urethane-based thermoplastic elastomer composition (A) and the carbon dioxide (B) (gas dissolving step); and
  • lowering a temperature of said molten urethane-based thermoplastic elastomer composition (C) (cooling step).

The present invention can produce the urethane-based thermoplastic elastomer foam of stable quality over a range from low foamed product to highly foamed product by adding a given quantity of carbon dioxide in the molten urethane-based thermoplastic elastomer quantitatively and stably. It can also produce the foam excellent in flexibility, thermal insulation and surface appearances. It is also excellent in safety, because of use of carbon dioxide in place of the common foaming agent of fluorochlorohydrocarbon or butane, thus causing no air pollution or destruction of the ozone layer.

A perpendicular magnetic recording medium for enabling high density recording is disclosed. The perpendicular magnetic recording medium includes a substrate on which a soft magnetic underlayer, a seed layer made of a non-crystalline material, an underlayer made of Ru or an Ru alloy including Ru as a main component, and a recording layer including a first magnetic layer and a second magnetic layer. The first and second magnetic layers include a plurality of magnetic grains having easy magnetization axes in a substantially perpendicular direction with respect to the substrate surface, and first and second nonmagnetic non-soluble phases segregating the magnetic grains of the first and second magnetic layers, respectively. The first magnetic layer includes the first non-soluble phase at a first atomic concentration that is higher than a second atomic concentration of the second non-soluble phase in the second magnetic layer.

This invention relates to a carbon structure manufacturing device, which forms carbon structures on a substrate. This manufacturing device comprises a first chamber, which forms a first space accommodating the substrate; a raw material gas supply device, which supplies raw material gas for formation of the carbon structures to the first space; a second chamber, which forms a second space separate from the first space; a gas supply device, which supplies gas for generation of plasma to the second space; a plasma generation device, which generates plasma in the second space; an aperture, connecting the first space and the second space; and, a plasma introduction device, which introduces plasma generated in the second space into the first space via the aperture; the raw material gas is used to form the carbon structures on the substrate. By means of this manufacturing device, when forming carbon structures on the substrate, the occurrence of contamination, foreign matter, and/or the like on electrodes and/or the like can be suppressed, and carbon structures can be formed satisfactorily over a broad area.

A method for fabricating a thin film pattern on a substrate includes a bank forming step of forming banks in a predetermined pattern on said substrate, a first material disposing step of disposing first liquid droplets made of a function liquid between said banks to form a first pattern, a second material disposing step of disposing second liquid droplets made of a function liquid on said first pattern, and an intermediate drying step of removing at least a part of a solvent contained in said first liquid droplets between said first material disposing step and said second material disposing step.

The invention supplies a method used to produce orientation silicon steel by low temperature heating. It includes the following steps: heating the plate blank under 1280 degree centigrade; hot rolling; once or double cold rolling to gain finished product sheet thickness; nitriding treatment; decarburizing annealing; coating insulator; high temperature annealing. In the nitriding technology, heating area dew point is controlled at -15-40 degree centigrade. The invention has the advantages of high nitriding efficiency, no influence from the surface oxide film, excellent MgO coat formula which makes the magnesium silicate substrate have good magnetic property, ensure the implementation for the next hot leveling annealing and insulating coating.

A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.

The present invention relates to methods and apparatuses for transferring pattern, a flexible display panel, a flexible solar cell, an electronic book, a thin film transistor, an electromagnetic-shielding sheet, and a flexible printed circuit board applying thereof. A pattern transfer method related to the present invention comprises: a first step of forming a pattern material on a substrate; a second step of hardening the pattern material in the solid state; a third step of patterning the pattern material by irradiating a laser beam to the hardened pattern material in the solid state; and a fourth step of pressing the patterned pattern material in the solid state and a flexible substrate facing each other and transferring the pattern material to the flexible substrate by a viscous force of the flexible substrate occurring in a facing part between the pattern material and the flexible substrate by irradiating the laser beam from the pattern material to the flexible substrate or from the flexible substrate to the pattern material.

A method of forming a thin film pattern by placing a functional liquid on a substrate, includes a bank formation step of forming banks in accordance with the thin film pattern on the substrate, a residue processing step of removing residue between the banks, and a material placement step of placing the functional liquid between the banks removed the residue.

The invention provides a conductive paste. The conductive paste contains silver powder, glass powder and an organic carrier, wherein the average particle size of the silver powder is 0.05-0.8mu m, and the glass powder contains a compound of Ag. According to the invention, the super-fine silver powder is used as the main component of the conductive paste provided by the invention, thereby greatly reducing sintering temperature and shortening sintering time; and simultaneously, addition of the compound of Ag in the glass powder is in favor of evenly and rapidly forming a Ag-Si intermetallic compound and reducing a contact resistance between an electrode and a solar substrate. Through using the conductive paste provided by the invention, the energy consumption generated by a solar battery can be effectively reduced, production efficiency is improved, and simultaneously the solar battery plate is ensured to have good photoelectric conversion efficiency.

PROBLEM TO BE SOLVED: To form the anodically oxidized films of the row of zip teeth of a fastener chain to arbitrary thicknesses while preventing the defects of energization and contact.SOLUTION: The forming apparatus 1 has an external energizing section 8 for electrically and directly energizing an electrode plate 4a disposed in an electrolyte of a first electrolytic cell 2a and a chain introducing section 5 to each other and a plurality of energizing sections 9 for energizing two sets a pair of adjacent electrode plates 4 within the second and subsequent electrolytic cells 2 to each other across the electrolyte and the fastener chain F. While the fastener chain is successively wrapped around a plurality of rollers 3 and 7 and is transferred zigzag, the tooth trains of the fastener chain are directly energized through the energizing yarn of the fastener chain by the external energizing section. The two sets a pair of the second and subsequent electrode plates are energized to each other in the bath by the energizing sections. The anodically oxidized films having the arbitrary film thicknesses are formed by changing the number of the passage stages to the second and subsequent electrolytic cells, the energizing quantity in the arbitrary electrolytic cells, etc.

A method for forming a protective layer for a dielectric material in an alternating current type plasma display is provided. In this connection, a coating sol solution is provided which can form a protective layer on a large area substrate without the need to introduce any expensive equipment, the protective layer thus formed being excellent in properties such as strength, adhesion, transparency, and protective properties and capable of being formed by a sol-gel process without use of the conventional vacuum process. The sol solution comprises a dispersion of a precursor to magnesium oxide in a specific form. A method for film formation, using this solution is also provided.

Information for generating a target speed pattern is computed from information acquired from various sensors and a running mode input switch, so as to generate the target speed pattern (S16). A process for determining whether to form a vehicle group or not calculates the difference between the target vehicle pattern of the own vehicle and a target speed pattern of another vehicle or vehicle group obtained through inter-vehicle communication, so as to determine whether to form the vehicle group or not (S22, S28, S32). This can determine whether to run solo or form a vehicle group according to a driver's demand.

The intermittent cutting transferring device 1 in the present invention is configured to guide the continuum of film sheet 10A between the blade 32 and the stationary glade 32 while the continuum of film sheet 10A is being sucked onto the outer peripheral surface 41 of the lower blade roll 40 by the suction through the suction holes 43 formed in the first region 41A on the outer peripheral surface 41 of the lower blade roll 40. The first region 41A is configured of a suction region 41A-1 in which a plurality of the suction holes are formed and a non-suction region 41A-2 in which suction hole is not formed. And the suction region and the non-suction region 41A-2 are provided alternately in a roll peripheral direction.

The invention discloses a high-speed feeding and discharging system, which comprises a control assembly, a bottle collecting net belt, a target platform and a bottle pushing assembly, wherein the target platform and the bottle pushing assembly are respectively located at two sides of the bottle collecting net belt; a bottle feeding end of the bottle collecting net belt is in butt joint with a bottle feeding net belt; the bottle feeding end is provided with a bottle feeding assembly; a bottle stopping assembly is arranged at one end, opposite to the bottle feeding end, of the bottle collecting net belt; the bottle collecting net belt is provided with a detection assembly used for detecting the length of a bottle queue on the bottle collecting net belt; and the detection assembly is connected with the control assembly. The invention also discloses a high-speed feeding and discharging method. When a condition that the length of the bottle queue on the bottle collecting net belt is identical with the length of the target platform is detected, the control assembly stops the transmission of the bottle collecting net belt and the bottle feeding net belt, and the bottle queue on the bottle collecting net belt is pushed towards the bottle stopping assembly, so that after the bottle queue between the bottle feeding assembly and the bottle stopping assembly is in butt joint with a bottle feeding end of the target platform, the bottle queue is pushed onto the target platform by the bottle pushing assembly. The system and the method have the advantage that the feeding speed is improved.