High purity zirconium boride / hafnium boride and preparation of superhigh temperature ceramic target material

A technology of ultra-high temperature ceramics and high-purity boron powder is applied in the preparation of high-purity ultra-high temperature ceramic targets, and the hot-pressing preparation field of high-purity zirconium boride ZrB2/hafnium boride HfB2 ultra-high temperature ceramic targets, which can solve the strength of the ceramic body. and poor density uniformity, difficult to obtain dense ceramic body, difficult sputtering process, etc., to achieve uniform density, improve mixing efficiency, and increase the effect of sintering temperature
CN101468918AActive Publication Date: 2009-07-01有研资源环境技术研究院(北京)有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
有研资源环境技术研究院(北京)有限公司
Publication Date
2009-07-01
Patent Text Reader

Abstract

The invention discloses a method for preparing a high-purity ultrahigh-temperature ceramic target material which belongs to the technical field of ceramic target materials, and in particular provides a method for preparing high-purity zirconium / hafnium boride powder and a ceramic target material thereof. The method comprises the steps of taking high-purity Zr powder, Hf powder and high-purity B powder as raw materials, adopting a self-propagating method to prepare high-purity ZrB2 and HfB2 powder respectively and then adopting a high-temperature high-pressure hot-pressing molding process to prepare a high-purity dense zirconium / hafnium boride ultrahigh-temperature ceramic target material, wherein the relative density of the target material reaches 95 to 99 percent. Relative to the prior art, metal powder in the method is slightly excessive when the materials are mixed, so as to make up for the metal loss during self-propagating reaction and further guarantee the component unicity of products. Relative to pressureless sintering, the sintering temperature needed in the method is greatly lowered; in addition, as the hot-pressing process adopts two-stage temperature, blank is uniform in temperature field, so as to ensure that the target material with uniform density can be obtained in the late hot-pressing process.
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Description

technical field

[0001] The invention belongs to a preparation method of high-purity ultra-high temperature ceramic target material, specifically high-purity zirconium boride ZrB 2 / hafnium boride HfB 2 The invention relates to a hot-press preparation method of an ultra-high temperature ceramic target, belonging to the technical field of ceramic targets. Background technique

[0002] Ultra-High Temperature Ceramics (UHTCS) is a class of ceramics that are widely used in aerospace due to their unique characteristics such as high melting point, high strength, high hardness, good oxidation resistance and flame retardancy. and other technical fields, such ceramics mainly include ZrB 2 , HfB 2 , ZrC, HfC and their composite ceramic materials. With the continuous progress of modern industry, thin-film technology and thin-film materials have developed rapidly, and have achieved fruitful results both in academics and in practical applications, and have become the most active fiel...

Claims

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