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Method of preparing ITO target material by oxygen atmosphere pressureless sintering process

A sintering method and oxygen atmosphere technology, applied in the field of ITO target preparation, can solve the problems of difficult process control, extremely high requirements for sintering equipment, danger, etc., and achieve the effects of low cost, good electrical conductivity and safe production

Inactive Publication Date: 2011-08-31
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] At present, the more commonly used sintering method for sintering ITO targets is high temperature and high pressure pure oxygen sintering, but using this method, there is a certain risk in production, the requirements for sintering equipment are extremely high, and the process is not easy to control

Method used

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  • Method of preparing ITO target material by oxygen atmosphere pressureless sintering process
  • Method of preparing ITO target material by oxygen atmosphere pressureless sintering process

Examples

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Effect test

Embodiment 1

[0037] After degreasing the pressed green body, put it into the sintering furnace for sintering. Raise the furnace temperature to 1600°C at 400°C / hr, keep it warm for 60 hours, and the oxygen flow rate is 20L / min. The density of the sample obtained by sintering is 6.03g / cm 3 , the density is 84.2%.

Embodiment 2

[0039] After degreasing the pressed green body, put it into the sintering furnace for sintering. Raise the furnace temperature to 1000°C at 400°C / hr, keep it warm for 10 hours, and the oxygen flow rate is 8L / min; ℃ / hr Raise the furnace temperature to 1600 ℃, keep it warm for 60 hours, the oxygen flow rate is 20L / min, and the density of the sample obtained by sintering is 6.75g / cm 3 , the density is 94.3%.

Embodiment 3

[0041]After degreasing the pressed green body, put it into the sintering furnace for sintering. Raise the furnace temperature to 1000°C at 400°C / hr, keep it warm for 10 hours, and the oxygen flow rate is 8L / min; ℃ / hr Raise the furnace temperature to 1600℃, keep it warm for 60 hours, the oxygen flow rate is 20L / min, and the density of the sample obtained by sintering is 7.01g / cm 3 , the density is 97.9%.

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Abstract

The invention discloses an innovative method of sintering ITO target material, and aims to realize pressureless oxygen atmosphere sintering by optimizing sintering process, and finally to obtain target material having high density and high performance. With sintering method as the basis and according to sintering characteristics of the ITO target material, the method adopts segmented sintering process, and controls oxygen partial pressure of the sintering atmosphere by controlling oxygen flow entering into a hearth to inhibit decomposition of the target material, and to finally obtain the high conductive performance target material, the density of which is more than 99.3%. The oxygen atmosphere pressureless sintering method is a novel ceramic sintering method, and is mainly applied to thesintering of oxide ceramics easy to decompose. Equipment for the method is simple, and products to be sintered are not restricted by size, so large-size ceramics can be produced. It is the first timeto produce the ITO target material by the method, and the ITO target material produced by the method is better than that produced by the commonly used sintering process with hot pressing, sintering process with hot isostatic pressing or common normal pressure sintering process.

Description

technical field [0001] The invention relates to the scientific field of ceramic material synthesis, in particular to a method for preparing an ITO target. Background technique [0002] ITO, commonly known as indium tin oxide, is a metal compound with good electrical conductivity. ITO film can be plated on various substrate materials (substrate materials include soda-lime glass, borosilicate glass, PET plastic, etc.) by magnetron sputtering and other methods. It is used as a conductive electrode on the surface, and is widely used in various flat panel display devices such as LCD, OLED, PDP, and touch screen. [0003] With its excellent optical and electrical properties, ITO transparent conductive film has been widely used in the field of optoelectronics, especially in the fast-growing FPD industry. In addition to LCD, there are high-definition television (HDTV), plasma tube display (PDP), Touch screen (Touch Panel), electroluminescence (EL), etc. In addition, ITO thin film g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/457
Inventor 陈敬超周晓龙杜焰阮进于杰冯晶
Owner KUNMING UNIV OF SCI & TECH
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