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Preparing method of porous tungsten oxide film

A tungsten oxide and thin film technology, applied in the field of preparation of porous tungsten oxide thin films, can solve the problems of uncontrolled porosity of thin films, uneven pore size distribution, pore collapse and connection, etc., to achieve controllable porosity and pore size, and easy control of process parameters. , the effect of uniform pore size distribution

Inactive Publication Date: 2010-03-03
GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The anodic oxidation method can obtain a tungsten oxide film with a uniform distribution of pores on the surface, but because the substrate is a thin tungsten sheet, it is not suitable for applications in the fields of optics and microelectronics
The sol-gel method requires organic polymers as pore-forming templates, but due to the poor bonding ability between template molecules and tungsten ions, the porous structure formed is difficult to maintain stability during high-temperature annealing, and the pores are prone to collapse and connection, and the porosity of the film is out of control. , the problem of uneven pore size distribution

Method used

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  • Preparing method of porous tungsten oxide film
  • Preparing method of porous tungsten oxide film
  • Preparing method of porous tungsten oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Choose a common glass plate as the substrate, and ultrasonically clean it in deionized water, ethanol, and acetone for ten minutes in sequence.

[0027] (2) Send the cleaned glass substrate into the sputtering chamber, the purity of the selected tungsten target and aluminum target is 99.99%; the vacuum is pumped to 10 -3 Pa; the temperature of the sputtering chamber is room temperature; argon is introduced as the working gas, the flow rate is 60sccm, and the working pressure is adjusted to 1.0Pa; after the gas flow is stable, turn on the RF power supply connected to the tungsten target and the aluminum target, and the tungsten target uses RF power supply is 3.5W / cm 2 , the power of the RF power supply used by the aluminum target is 5W / cm 2 ; After 30 minutes of pre-sputtering, the double-target co-sputtering film was formed. After sputtering, a silver-colored tungsten-aluminum alloy film is obtained on the substrate.

[0028] (3) Immerse the obtained tungsten-alu...

Embodiment 2

[0032] The difference from Example 1 is that the sputtering power of the aluminum target is set to 5.2W / cm during sputtering 2 .

[0033] Compared with the film prepared in Example 1, the porous tungsten oxide film prepared in this example has a higher porosity of about 40%, uniform pore size distribution, and an average pore size of about 120 nm.

Embodiment 3

[0035] The difference from Example 1 is that the sputtering power of the aluminum target is set to 1.2W / cm 2 .

[0036] The porous tungsten oxide film prepared in this example has a relatively low porosity of about 15%, a uniform pore size distribution, and an average pore size of about 80 nm.

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Abstract

The invention provides a preparing method of a porous tungsten oxide film, which is characterized in that the preparing method comprises the following steps: adopting a tungsten-target and aluminum-target magnetic control co-sputtering technology to deposit tungsten and aluminum on a substrate to form an aluminum alloy film; dipping the obtained tungsten-aluminum alloy film into alkaline solutionfor selective corrosion and oxidation; and finally, obtaining the porous tungsten oxide film on the substrate. The porous tungsten oxide film prepared with the method has even aperture distribution, and the average aperture size is about 100nm. The invention has the following obvious advancement and originality of simple preparation, easy control of technological parameters, controllable porosityand aperture size and even aperture distribution. The product structure and the property thereof are very suitable for manufacturing electrochromic devices and air-sensitive devices.

Description

technical field [0001] The invention relates to the technical field of chemistry and chemical engineering, in particular to a method for preparing a porous tungsten oxide film with a nanoscale aperture. technical background [0002] Tungsten oxide thin film has the characteristics of electrochromism and gas sensitivity, and can be applied to smart windows, displays, H 2 Sensors and other fields. Tungsten oxide film with nanoporous structure can enhance its gas sensitivity and electrochromic sensitivity due to its high specific surface area and special spectral response. In recent years, the preparation of porous tungsten oxide film has become a research hotspot. [0003] The currently reported methods for preparing porous tungsten oxide films are mainly anodic oxidation and sol-gel methods. The anodic oxidation method can obtain a tungsten oxide film with a uniform distribution of pore size on the surface, but since the substrate is a thin tungsten sheet, it is not suitabl...

Claims

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Application Information

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IPC IPC(8): C23C14/14C23C14/35C23C14/58C23F1/02C23F1/36
Inventor 徐刚黄志峰黄春明徐雪青苗蕾
Owner GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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