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Manufacture method of target structure

A production method and target material technology, which is applied in the field of target material structure production, can solve the problems of not meeting the requirements of semiconductor target material and low bonding strength, achieve high bonding strength, and realize the effect of industrialized production

Inactive Publication Date: 2012-07-18
余姚康富特电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem solved by the invention is that the bonding strength of the direct welding of tungsten or tungsten alloy target and the back plate is not high enough to meet the requirements of the semiconductor target

Method used

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  • Manufacture method of target structure

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Embodiment Construction

[0028] The production of existing tungsten or tungsten alloy target components is to directly weld tungsten or tungsten alloy to the back plate of dissimilar metals (such as copper, copper alloy, aluminum or aluminum alloy), which will cause unstable welding quality of the two (such as welding combination The strength is weak), which cannot meet the requirements of semiconductor targets.

[0029] An embodiment of the present invention provides a method for manufacturing a target assembly, figure 1 It is a schematic flow chart of manufacturing a target structure according to an embodiment of the present invention. Such as figure 1 as shown,

[0030] Step S11, providing a target material, the target material is tungsten or tungsten alloy;

[0031] Step S12, performing activation treatment on the surface to be welded of the target;

[0032] Step S13, using an electroless plating process to form a metal coating on the surface to be welded of the activated target;

[0033] Ste...

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Abstract

The invention relates to a manufacture method of a target structure, which includes providing a target such as tungsten or a tungsten alloy; conducting activating treatment on a face to be welded of the target; forming a metal coating on the face to be welded of the target after activating treatment; and welding the target after chemical plating treatment to a back panel. The metal coating is formed on a face to be welded of a tungsten target or a tungsten alloy target through chemical plating, the metal coating is used as an intermediation, firm combination of the target and the back panel is achieved after the target and the back panel are welded, and high combination strength is achieved. The manufacture method explores a stable technological process of plating the metal coating through the chemical plating method on the face to be welded of the tungsten target or the tungsten alloy target and achieves industrialized production.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a target structure. Background technique [0002] Generally, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and can conduct heat. In the sputtering process, the working environment of the target assembly is relatively harsh, for example, the target assembly has a higher operating temperature; -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target assembly; moreover, the target assembly is in a high-voltage electric field and magnetic field, and will be bombarded by various particles. In such a harsh environment, if the bonding strength between the target and the back plate in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C18/18
Inventor 潘杰姚力军王学泽宋佳
Owner 余姚康富特电子材料有限公司
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