Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing column-shaped nano-tungsten

A kind of metal tungsten and nanotechnology, applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems that are not suitable for insulating materials

Inactive Publication Date: 2013-10-23
BEIHANG UNIV
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The DC sputtering method requires the target to be able to transfer the positive charge obtained from the ion bombardment process to the cathode that is in close contact with it, so this method can only sputter conductive materials, not suitable for insulating materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing column-shaped nano-tungsten

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] This embodiment includes the following steps:

[0015] (1) Fabrication of the sample holder

[0016] Car out an aluminum cylinder with a specified size, with an outer diameter of 5.8cm and an inner diameter of 5.1cm. The wall of the cylinder is divided into four rows of holes. The distance between the two holes in each row is 2.0cm, and the sample holder is 2.5cm. In the well, the sample is fixed on the sample holder.

[0017] (2) Cleaning of the substrate

[0018] Graphite substrates of 1cm*1cm were ultrasonically cleaned in ethanol, acetone, and deionized water for 10 minutes in sequence, and then dried with high-pressure airflow. Finally it is fixed at a specific angle on the sample holder.

[0019] (3) Preparation of nano-columnar tungsten film

[0020] Using the method of grazing angle deposition and oblique growth, under the conditions of background vacuum 3*10-4Pa, current 0.15A, and voltage 300V, by changing the angle α between the normal direction of the su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing column-shaped nano-tungsten. The method enables tungsten to grow on a graphite substrate in a tilted column shape, and can be used for studying the radiation performance of a first wall material. The method mainly comprises the following steps of: (1) manufacturing a sample rack, namely manufacturing a cylinder, and clamping four substrates at different angles inside the cylinder for simultaneously sputtering; (2) preparing the graphite substrate, namely preparing the graphite substrate with the size of 1cm*1cm, and washing the substrate to a certain extent; and (3) preparing the column-shaped nano-tungsten by a direct-current magnetron sputtering glancing angle deposition method, namely sputtering a pure tungsten target material on the graphite conductive substrate by changing the included angle alpha between the normal direction of the substrate and an incident particle flow so as to prepare a column-shaped nano-tungsten membrane.

Description

technical field [0001] The patent of the invention belongs to the field of nanomaterials and material manufacturing, and relates to a method for preparing nano-columnar metal tungsten by DC magnetron sputtering. Background technique [0002] Magnetron sputtering is to perform high-speed sputtering under low pressure, and the ionization rate of the gas must be effectively increased. By introducing a magnetic field on the surface of the target cathode, using the magnetic field to confine the charged particles to increase the plasma density and increase the sputtering rate. The DC sputtering method requires the target to be able to transfer the positive charge obtained from the ion bombardment process to the cathode that is in close contact with it, so this method can only sputter conductive materials and is not suitable for insulating materials. Commonly used metal materials are W, Au, Ag, Ti, Cr, etc. The methods commonly used at present usually include: the sputtering dire...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/18
Inventor 朱开贵蔡亚南
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com