Welding method of tungsten target assembly

A welding method and target material technology, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of large difference in melting point, low bonding strength, poor welding tightness of target components, etc., to prevent oxidation, High binding rate, small deformation effect

Inactive Publication Date: 2012-06-20
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] For the target assembly composed of tungsten target and copper back plate, since the melting point of tungsten is 3407°C and the melting point of copper is 1084°C, the melting points of the two materials are quite different, and the existing welding equipment cannot realize large-scale welding. Therefore, it is not suitable to weld the tungsten target and the copper back plate together by welding; the tin solder or indium solder used in the brazing process has a low melting point (less than 250 ° C), so that when the tungsten target is welded by brazing When the material and the copper back plate are welded together, not only the bonding s

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  • Welding method of tungsten target assembly
  • Welding method of tungsten target assembly
  • Welding method of tungsten target assembly

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Embodiment 1

[0061] figure 1 It is the flow chart of the welding method of the tungsten target assembly in the first embodiment of the welding method of the tungsten target assembly of the present invention, which shows that the target assembly is formed when the intermediate layer between the tungsten target and the copper back plate is manufactured separately The welding process, the following will figure 1 and figure 2 , image 3 , Figure 4 Embodiment 1 will be described in detail in combination.

[0062] Step S11 is first performed: providing a tungsten target blank, a copper back plate, and an intermediate layer.

[0063] A tungsten target blank 11 is provided. In this embodiment, a tungsten target blank with a purity of 99.995% is taken as an example. According to the actual requirements of the application environment and sputtering equipment, the shape of the tungsten target blank 11 can be any of circular, rectangular, annular, conical or other similar shapes (including regu...

Embodiment 2

[0077] Figure 5 It is the flow chart of the welding method of the tungsten target assembly in the second embodiment of the welding method of the tungsten target assembly of the present invention, which shows that when the intermediate layer between the tungsten target and the copper back plate is formed on the pre-combined tungsten target blank The welding process of the target assembly on the surface, the following will Figure 5 and Figure 6 , Figure 7 Embodiment 2 will be described in detail in combination.

[0078] First, step S21 is performed: providing a tungsten target blank and a copper back plate.

[0079] A tungsten target blank is provided. In this embodiment, a tungsten target blank with a purity of 99.995% is taken as an example. According to the actual requirements of the application environment and sputtering equipment, the shape of the tungsten target blank 21 can be any of circular, rectangular, annular, conical or other similar shapes (including regular ...

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Abstract

The invention provides a welding method of a tungsten target assembly, which comprises the following steps of: providing a tungsten target blank and a copper back plate between which an intermediate layer is additionally arranged; placing the tungsten target blank, the intermediate layer and the copper back plate in a vacuum sheath, so that the intermediate layer is positioned between the tungsten target blank and the copper back plate, and the vacuum sheath is placed in welding equipment; welding materials to be welded together by a hot isostatic pressing process to form the tungsten target assembly; and after the ompletion of welding, carrying out cooling, and removing the vacuum sheath to obtain the tungsten target assembly. By additionally arranging the intermediate layer between the tungsten target blank and the copper back plate and welding the tungsten target blank and the copper back plate together by utilizing the hot isostatic pressing process, the large-area welding can be realized, and the surface of the welding material can be prevented from being oxidized because the whole welding process is in a vacuum environment; and in addition, in the formed tungsten target assembly, the bond rate and the bond strength of the tungsten target blank and the copper back plate are higher, and the deformation is small after the tungsten target blank and the copper back plate are welded together.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method for tungsten target components. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate that can be combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. For example, metal tungsten (Co) can be selected as the target material, and copper or copper alloy material with sufficient strength, high thermal conductivity and high electrical conductivity can be selected as the back plate to form the target component. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. For example, the ambient temperature of the target assembly is relatively high...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/14B23K20/24
Inventor 姚力军潘杰王学泽周友平
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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