Method of manufacturing chemical vapor deposition high-purity tungsten sputtering target material

Abstract

The invention discloses a method of manufacturing a chemical vapor deposition high-purity tungsten sputtering target material. The method comprises the following steps that (1) raw materials are prepared, tungsten hexafluoride which is in gaseous state at normal temperature and normal pressure is taken as a raw material; (2) the high-purity metal tungsten is prepared, the tungsten hexafluoride isreduced into the high-purity metal tungst by using a reducing gas through chemical vapor deposition equipment, the tungsten hexafluoride is reduced into high-purity metal tungsten by using the reducing gas; and (3) and the high-purity metal tungsten obtained in the step (2) is deposited on a matrix material, a one-step method is used for producing the high-purity tungsten target material or the tungsten target material blank material. According to the method, the problems that an existing tungsten target material is low in purity and not easy to process, the surface is easy to pollute, the quality consistency is poor are solved, the vapor deposition reaction is a continuous gaseous reaction, the reaction process is uniform, and the product consistency is good; the one-step method is adopted to prepare the tungsten target material, secondary machining pollution is avoided, it is beneficial to guaranteeing the quality of the tungsten target product, and the production cost is low.

Description

technical field [0001] The invention relates to a method for manufacturing a high-purity tungsten sputtering target material for chemical vapor deposition, in particular to a method for manufacturing a high-purity tungsten sputtering target material for forming a thin film for a diffusion contact layer of a large-scale integrated circuit. Background technique [0002] Large-scale integrated circuits often use tungsten targets for vacuum sputtering, especially large-scale high-purity tungsten targets. In the current semiconductor integrated circuit field, the purity of tungsten targets is 99.995%-99.999%, and the diameter is 300-450mm, thickness 5-15mm. However, with the development of the semiconductor industry, large-scale integrated circuits put forward higher requirements for tungsten targets. [0003] Tungsten is a refractory and difficult-to-process metal. The powder metallurgy method is generally used to make tungsten targets in the industry. The powder metallurgy pro...

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Problems solved by technology

[0004] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a chemical vapor deposition high-purity tungsten sputtering target manufacturing method to solve the problem that the existing tungsten target blank has low purity, is difficult to process, and is easy to pollute the surface. Problems such as poor quality consistency