Diffusion welding method for tungsten target material and copper back plate

A technology of diffusion welding and copper backplane, applied in the field of target manufacturing, can solve the problem of insufficient bonding ability between tungsten target and copper backplane, and achieve the effect of solving the insufficient bonding ability and improving the bonding performance.

Pending Publication Date: 2021-08-27
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the above technical problems, the present application provides a diffusion welding method of a tungsten target and a copper backplane, which can improve the

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  • Diffusion welding method for tungsten target material and copper back plate
  • Diffusion welding method for tungsten target material and copper back plate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] This embodiment provides a method for diffusion welding of a tungsten target and a copper backplane. The diffusion welding method includes the following steps:

[0048] The welding surface of the tungsten target is finely ground. After the fine grinding, the roughness Ra of the welding surface is ≤ 3 μm. After IPA ultrasonic cleaning, PVD titanium coating is performed. The thickness of the titanium film is 3 μm, and the non-welding surface is polished. Carry out IPA ultrasonic cleaning after described polishing treatment;

[0049] Machining the copper backplane to the assembly size, performing IPA ultrasonic cleaning on the welding surface of the copper backplane after IPA ultrasonic cleaning, the thickness of the titanium film is 3 μm, and performing IPA ultrasonic cleaning after the PVD coating;

[0050]Machining the middle layer to the assembly size, the surface roughness of the middle layer is Ra≤1.6 μm, and performing IPA ultrasonic cleaning after the machining;

...

Embodiment 2

[0055] This embodiment provides a method for diffusion welding of a tungsten target and a copper backplane. The diffusion welding method includes the following steps:

[0056] The welding surface of the tungsten target is finely ground. After the fine grinding, the roughness Ra of the welding surface is ≤ 3 μm. After IPA ultrasonic cleaning, a PVD titanium coating is performed. The thickness of the titanium film is 6 μm, and the non-welding surface is polished. Carry out IPA ultrasonic cleaning after described polishing treatment;

[0057] Machining the copper backplane to the assembly size, performing IPA ultrasonic cleaning on the welding surface of the copper backplane with PVD titanium film, the thickness of the titanium film is 6 μm, and performing IPA ultrasonic cleaning after the PVD coating;

[0058] Machining the middle layer to the assembly size, the surface roughness of the middle layer is Ra≤1.6 μm, and performing IPA ultrasonic cleaning after the machining;

[00...

Embodiment 3

[0063] This embodiment provides a method for diffusion welding of a tungsten target and a copper backplane. The diffusion welding method includes the following steps:

[0064] The welding surface of the tungsten target is finely ground. After the fine grinding, the roughness of the welding surface is Ra≤3μm. After IPA ultrasonic cleaning, PVD titanium coating is performed. The thickness of the titanium film is 3.5μm, and the non-welding surface is polished. , carry out IPA ultrasonic cleaning after described polishing treatment;

[0065] Machining the copper backplane to the assembly size, performing IPA ultrasonic cleaning on the welding surface of the copper backplane with PVD titanium film, the thickness of the titanium film is 3.5 μm, and performing IPA ultrasonic cleaning after the PVD coating;

[0066] Machining the middle layer to the assembly size, the surface roughness of the middle layer is Ra≤1.6 μm, and performing IPA ultrasonic cleaning after the machining;

[00...

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Abstract

The invention provides a diffusion welding method for a tungsten target material and a copper back plate. The diffusion welding method comprises the following steps that accurate grinding and PVD film plating are sequentially carried out on the welding face of the tungsten target material, and polishing treatment is carried out on the non-welding face of the tungsten target material; PVD film plating is carried out on the welding surface of the copper back plate; and the tungsten target material, the welding surface and the middle layer are assembled, and sequentially subjected to sheath welding and hot isostatic pressing welding. According to the diffusion welding method for the tungsten target material and the copper back plate, the bonding performance of the tungsten target and the copper back plate can be improved, and the problem that the bonding capacity of the tungsten target and the copper back plate is insufficient is solved.

Description

technical field [0001] The invention belongs to the field of target material manufacturing and relates to a diffusion welding method of a tungsten target material and a copper back plate. Background technique [0002] Sputtering Target Back Plate (BP): Metal sputtering target is the material used as cathode in sputtering deposition technology. The cathode material breaks away from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations in the sputtering machine and redeposits on the surface of the anode. Since the metal sputtering target is often a relatively expensive material such as high-purity aluminum, copper, titanium, nickel, tantalum, and precious metals, relatively common materials are often used as the back plate during its manufacture. The back plate plays the role of supporting the target, cooling, and reducing costs. The commonly used materials are aluminum alloy (ALBP), copper alloy (CUBP), etc. [0003] Hot isostati...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/24B23P23/04
CPCB23K20/026B23K20/24B23P23/04
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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