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Diffusion welding method for tungsten target and copper-zinc alloy back plate

A diffusion welding and target technology, which is applied in the field of diffusion welding of tungsten targets and copper-zinc alloy backplates, can solve the problems of poor uniformity of stress distribution on the welding surface, low welding bonding rate, and short service life, so as to prolong the service life. , Strengthen the thermal conductivity, strengthen the effect of uniform distribution

Inactive Publication Date: 2020-12-25
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the existing welding methods, the welding bonding rate is low, the uniformity of stress distribution on the welding surface is poor, and the service life is short.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] This embodiment provides a method for diffusion welding of a tungsten target and a copper-zinc alloy backplane. The diffusion welding method includes the following steps:

[0038] (1) The welding surface of the tungsten target with a roughness Ra of 3 μm is treated with titanium coating, and then the coated tungsten target is cleaned and dried in sequence; the thickness of the titanium film is 3 μm; the cleaning method is ultrasonic cleaning, and the time is 10min; the drying method is vacuum drying, the vacuum degree in drying is 0.01Pa, and the time is 60min;

[0039] (2) Assemble the dried tungsten target material and copper-zinc alloy back plate in step (1) and place them in the sheath, then carry out argon arc welding on the sheath in turn, vacuumize to a vacuum degree of 0.001Pa and degas , hot isostatic welding is performed on the degassed sheath, and after completion, the sheath is removed to obtain the tungsten target assembly;

[0040] An aluminum alloy inter...

Embodiment 2

[0045] This embodiment provides a method for diffusion welding of a tungsten target and a copper-zinc alloy backplane. The diffusion welding method includes the following steps:

[0046] (1) The welding surface of the tungsten target with a roughness Ra of 1 μm is treated with titanium coating, and then the coated tungsten target is cleaned and dried in sequence; the thickness of the titanium film is 5 μm; the cleaning method is ultrasonic cleaning, and the time is 20min; the drying method is vacuum drying, the vacuum degree in drying is 0.001Pa, and the time is 80min;

[0047] (2) Assemble the dried tungsten target and copper-zinc alloy back plate in step (1) and place them in the sheath, then carry out argon arc welding on the sheath in turn, vacuumize to a vacuum degree of 0.0007Pa and degas , hot isostatic welding is performed on the degassed sheath, and after completion, the sheath is removed to obtain the tungsten target assembly;

[0048] An aluminum alloy intermediate...

Embodiment 3

[0053] This embodiment provides a method for diffusion welding of a tungsten target and a copper-zinc alloy backplane. The diffusion welding method includes the following steps:

[0054] (1) The welding surface of the tungsten target with a roughness Ra of 2 μm is treated with titanium coating, and then the coated tungsten target is cleaned and dried in sequence; the thickness of the titanium film is 4 μm; the cleaning method is ultrasonic cleaning, and the time is 30min; the drying method is vacuum drying, the vacuum degree in drying is 0.006Pa, and the time is 90min;

[0055] (2) Assemble the dried tungsten target and copper-zinc alloy back plate in step (1) and place them in the sheath, then carry out argon arc welding on the sheath in turn, vacuumize to a vacuum degree of 0.0004Pa and degas , hot isostatic welding is performed on the degassed sheath, and after completion, the sheath is removed to obtain the tungsten target assembly;

[0056] An aluminum alloy intermediate...

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Abstract

The invention relates to a diffusion welding method for a tungsten target and a copper-zinc alloy back plate. The diffusion welding method comprises the following steps that (1) titanium film platingtreatment is conducted on the welding face, with the roughness Ra smaller than or equal to 3 micrometers, of the tungsten target, and then the tungsten target obtained after film plating is sequentially cleaned and dried; and (2) the tungsten target dried in the step (1) and the copper-zinc alloy back plate are assembled and then placed in a sheath, then the sheath is sequentially welded, vacuumized and degassed, hot isostatic pressing welding is conducted on the degassed sheath, and after hot isostatic pressing welding is completed, the sheath is dismounted to obtain a tungsten target assembly. An aluminum alloy middle layer is arranged between the tungsten target and the copper-zinc alloy back plate in the sheath. After titanium plating treatment is conducted on the welding face of the target under the specific roughness, effective welding of the target and the back plate is achieved, stress distribution of the welding face is uniform after welding, the welding bonding rate is largerthan or equal to 98%, the heat transfer performance between the target and the back plate is enhanced, and the service life is prolonged.

Description

technical field [0001] The invention relates to the field of target welding, in particular to a diffusion welding method for a tungsten target and a copper-zinc alloy back plate. Background technique [0002] Metallic sputtering targets are currently the materials used as cathodes in sputtering deposition techniques. The cathode material breaks away from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations in the sputtering machine and redeposits on the surface of the anode. Since the metal sputtering target is often a relatively expensive material such as high-purity aluminum, copper, titanium, nickel, tantalum, and precious metals, relatively common materials are often used as the back plate during its manufacture. The back plate plays the role of supporting the target, cooling, and reducing costs. The commonly used materials are aluminum alloy or copper alloy. [0003] For example, CN108544045A discloses a tungsten target we...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/14B23K20/24
CPCB23K20/026B23K20/14B23K20/24
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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