Large-sized high purity tungsten target and production method thereof

A production method and large-scale technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of stainless steel sleeve deformation, complex production process, and not suitable for mass industrial production

Active Publication Date: 2014-05-21
ZHUZHOU HARD ALLOY GRP CO LTD
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The production process of this method is complicated, and it is not suitable for large-scale industrial production; at the same time, when the stainless steel sleeve coated on the outside of the tungsten slab is hot-rolled and deformed after being heated at a high temperature, because its high-temperature strength is lower than that of the tungsten slab, it is mainly The deformation of the stainless steel sleeve makes it difficult to achieve the purpose of uniform deformation of the tungsten slab

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-sized high purity tungsten target and production method thereof
  • Large-sized high purity tungsten target and production method thereof
  • Large-sized high purity tungsten target and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: Select 38.1 kg of tungsten powder with a particle size of 2.45 μm and a purity of 99.999%, and use a steel core mold to press and hold the pressure at 200 MPa for 5 minutes before forming; sintering in an intermediate frequency furnace, the sintering temperature is 2350 ° C, and the sintering time is 10 hour, the prepared size is 47.3×201×218mm, the density is 18.4g / cm 3 sintered tungsten slabs; tungsten slabs are annealed at 1500°C / 90min, and hot-rolled through multiple passes to a size of 11.1×425×419mm and a density of 19.27g / cm 3 (density 99.6%) hot-rolled tungsten plate, the total hot-rolled deformation is 76.5%; after the hot-rolled tungsten plate is annealed at 1350°C / 120min, it is machined by turning, milling, and grinding. The processing volume is 1.9mm and 2.2mm respectively; the tungsten target material of Φ400±0.1×7±0.1mm is finally processed, and the average grain size of the surface is measured to be 64μm, and the surface grain structure is as f...

Embodiment 2

[0020] Example 2: Select 54.5 kg of tungsten powder with a particle size of 2.6 μm and a purity of 99.999%, and use a steel core mold to press isostatically press at 250 MPa for 8 minutes and then form it; sinter in an intermediate frequency furnace, the sintering temperature is 2400 ° C, and the sintering time is 8 Hours, the prepared size is 60.7×223×219mm, the density is 18.4g / cm 3 The sintered tungsten slab; after the tungsten slab is annealed at 1550℃ / 120min, it is hot-rolled through multiple passes to a size of 12.3×476×483mm and a density of 19.28g / cm 3 (Density 99.6%) hot-rolled tungsten plate, the total deformation of hot-rolled is 79.7%; after the hot-rolled tungsten plate is annealed at 1400℃ / 90min, it is machined by turning, milling, grinding, etc., the mechanical processing of the upper and lower surfaces The processing volume is 2.1mm and 2.2mm respectively; the Φ450±0.1×8±0.1mm tungsten target is finally processed. After measurement, the average grain size of th...

Embodiment 3

[0021] Example 3: Select 64.3 kg of tungsten powder with a particle size of 2.2 μm and a purity of 99.999%, and use a steel core mold to press and hold the pressure at 180 MPa for 10 minutes before forming; sintering in an intermediate frequency furnace, the sintering temperature is 2300 ° C, and the sintering time is 12 Hours, the prepared size is 64.3×235×230mm, the density is 18.5g / cm 3 sintered tungsten slabs; tungsten slabs are annealed at 1450°C / 180min, and hot-rolled through multiple passes to a size of 12.1×527×521mm and a density of 19.30g / cm 3 (density 99.7%) hot-rolled tungsten plate, the total hot-rolled deformation is 81.2%; after the hot-rolled tungsten plate is annealed at 1300°C / 150min, it is machined by turning, milling, and grinding. The processing amount is 2.0mm and 2.1mm respectively; Φ500±0.1×8±0.1mm tungsten target is finally processed, and the average grain size of the surface is measured to be 47μm, and the surface grain structure is as follows: imag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
crystal sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a large-sized high purity tungsten target with the diameter of over 400mm for a semiconductor, wherein the purify can be over 99.999%, the compactness is over 99.5% and the grain size is less than or equal to 100 mu m. The preparation method comprises the following steps: uniformly mixing tungsten powder with the purify over 99.999% and the grain size of 2.2-2.6 mu m; compression moulding by isostatic cool pressing at 180-250MPa for 5-10 minutes; carrying out middle frequency induction sintering for 8-12 hours at 2300-2400 DEG C; after annealing for 90-180 minutes at 1450-1550 DEG C, carrying out multi-pass hot rolling to 5-15mm thick, wherein the total deformation of hot rolling is greater than 60%; and then, after annealing for 90-150 minutes at 1300-1400 DEG C and machining, wherein the machining amounts of the upper and lower surfaces are greater than or equal to 1.5mm. Finally, the obtained tungsten target is not only excellent in performance, but also relatively simple in process and low in equipment requirement.

Description

[0001] technical field [0002] The invention relates to a production method of a high-purity tungsten target, which is particularly suitable for the production of large-scale high-purity tungsten targets for semiconductors. technical background [0003] The sputtering method is one of the main technologies for preparing thin film materials. It bombards the target with high-speed moving ions, and the atoms generated are emitted and accumulated on the surface of the substrate to form a coating. The bombarded solid is the raw material for depositing thin films by sputtering. , called the sputtering target. The film deposited by sputtering with the target has the advantages of high density and good adhesion. The rare metal tungsten has been widely used in sputter coating fields such as semiconductor integrated circuits and solar photovoltaics due to its advantages such as high melting point, high strength, low thermal expansion coefficient, low resistivity, and good thermal st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/18
Inventor 魏修宇黄江波龙坚战张外平李光宗夏艳成常理宋立强
Owner ZHUZHOU HARD ALLOY GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap