Manufacturing method of tungsten target

A production method and target technology, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of rough surface of tungsten target material, affecting the sputtering effect of sputtering process, substrate damage, etc. To achieve the effect of improving production efficiency

Active Publication Date: 2015-03-18
KONFOONG MATERIALS INTERNATIONAL CO LTD
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AI Technical Summary

Problems solved by technology

However, in the process of processing, due to the stress, the tungsten target blank is prone to corner drop during processing, and the surface of the formed tungsten target is rough, which affects the sputtering effect of the subsequent sputtering process, and even discharges. Damage to the coated substrate
Moreover, due to the high hardness of tungsten, serious tool wear and frequent tool breakage, the production cost of tungsten targets is too high

Method used

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  • Manufacturing method of tungsten target

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Embodiment Construction

[0034] In the prior art, ordinary cutting tools are used to process tungsten target blanks. The tungsten target blanks are prone to corners during the processing, and the surface of the formed tungsten target is rough, which affects the sputtering effect of the subsequent sputtering process, and even Discharge will occur, causing damage to the substrate to be coated; moreover, the tool wear is serious during the processing, and the fracture is more frequent, resulting in the high production cost of the tungsten target

[0035] The present invention uses a diamond grinding wheel as a tool for rough grinding, semi-finishing grinding and fine grinding of tungsten target material blanks. Due to the high hardness and good wear resistance of diamond, the tungsten target material blanks are not prone to drop corners during the processing process. The sputtering performance of the tungsten target is good. At the same time, the diamond grinding wheel has low loss during the processing of t...

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Abstract

Disclosed is a manufacturing method of a tungsten target. The manufacturing method of the tungsten target comprises providing a tungsten target blank, wherein the tungsten target blank comprises a sputtering surface and a back surface; rough-grinding the sputtering surface and the back surface through a diamond grinding wheel; performing accurate semi-grinding on the sputtering surface and the back surface through the diamond grinding wheel; performing accurate grinding on the sputtering surface through the diamond grinding wheel. The manufacturing method of the tungsten target can reduce or avoid edge failure of the tungsten target blank during the machining process to obtain the tungsten target high in dimensional precision, low in surface roughness and capable of meeting the sputtering performance, and meanwhile, can reduce losses of tools during the machining process of the tungsten target blank and further reduce the machining cost of the tungsten target.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a tungsten target Background technique [0002] In vacuum sputtering, electrons collide with argon atoms in the process of accelerating to the substrate under the action of an electric field, and ionize a large number of argon ions and electrons. Among them, the electrons fly to the substrate and the argon ions are accelerated under the action of the electric field. Bombardment of the target, the target is composed of a target material and a back plate supporting the target material. A large number of target material atoms are sputtered. The neutral target material atoms (or molecules) are deposited on the substrate to form a film, and finally reach the substrate The purpose of film surface coating. [0003] Large-scale integrated circuits often use tungsten targets for vacuum sputtering. Tungsten has the following mechanical and physical properties:...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00C23C14/34
CPCC23C14/3414
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽龚祖光
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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