Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of tungsten target

A production method and target material technology, which is applied in the field of tungsten target material production, can solve problems such as surface roughness of tungsten target material, influence on sputtering effect of sputtering process, substrate damage, etc., and achieve the effect of improving production efficiency

Active Publication Date: 2017-09-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of processing, due to the stress, the tungsten target blank is prone to corner drop during processing, and the surface of the formed tungsten target is rough, which affects the sputtering effect of the subsequent sputtering process, and even discharges. Damage to the coated substrate
Moreover, due to the high hardness of tungsten, serious tool wear and frequent tool breakage, the production cost of tungsten targets is too high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of tungsten target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In the prior art, ordinary cutting tools are used to process the tungsten target blank. The tungsten target blank is prone to drop corners during the processing, and the surface of the formed tungsten target is rough, which affects the sputtering effect of the subsequent sputtering process, and even Discharge will occur, which will damage the substrate for coating; moreover, the tool loss is serious and the fracture is frequent during the processing, which leads to the high production cost of the tungsten target.

[0035] The present invention uses a diamond grinding wheel as a tool for rough grinding, semi-fine grinding and fine grinding of the tungsten target blank. Due to the high hardness and good wear resistance of diamond, the tungsten target blank is not easy to drop corners during processing, and the formed The sputtering performance of the tungsten target is good. At the same time, the loss of the diamond grinding wheel in the process of processing the tungsten ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a manufacturing method of a tungsten target. The manufacturing method of the tungsten target comprises providing a tungsten target blank, wherein the tungsten target blank comprises a sputtering surface and a back surface; rough-grinding the sputtering surface and the back surface through a diamond grinding wheel; performing accurate semi-grinding on the sputtering surface and the back surface through the diamond grinding wheel; performing accurate grinding on the sputtering surface through the diamond grinding wheel. The manufacturing method of the tungsten target can reduce or avoid edge failure of the tungsten target blank during the machining process to obtain the tungsten target high in dimensional precision, low in surface roughness and capable of meeting the sputtering performance, and meanwhile, can reduce losses of tools during the machining process of the tungsten target blank and further reduce the machining cost of the tungsten target.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten target Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons. Among them, the electrons fly to the substrate, and the argon ions are accelerated under the action of an electric field. Bombard the target, the target is composed of the target and the back plate supporting the target, a large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the substrate The purpose of coating the surface of the sheet. [0003] Large-scale integrated circuits often use tungsten targets for vacuum sputtering. Tungsten has the following mechanical and physical properties: Tungsten is a re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B23P15/00C23C14/34
CPCC23C14/3414
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽龚祖光
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products