Tungsten target manufacturing method

Abstract

A tungsten target manufacturing method comprises the steps of providing tungsten powder; placing the tungsten powder in a package sleeve and performing vacuum pumping; adopting a cold isostatic pressing to enable the tungsten powder in the package sleeve to undergo primary densifying processing, and forming primary tungsten target blank; after the primary densifying processing, removing the package sleeve, adopting an induction sintering process to enable the primary tungsten target blank to undergo secondary densifying processing, and forming secondary tungsten target blank; after the secondary densifying processing, adopting a hot isostatic pressing process to enable the secondary tungsten target blank to undergo third-time densifying processing, and forming a tungsten target. The tungsten target with the full density of over 99.4% can be manufactured through the tungsten target manufacturing method; and the uniformity of the internal organizational structure and the grain size of the tungsten target meet a sputtering process with the requirement higher and higher.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten target. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved. [0003] Tungsten targets are often used in the vacuum sputtering process. Early tungsten targets were obtained by melting and casting. However, the density of tungsten targets formed by melting and casting is difficult to control. In order to overcome this problem, p...

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Problems solved by technology

[0006] The problem solved by the present invention is that the density of the tungsten target produced by the existing powder metallurgy process is only about 93%, and it is difficult to achieve a full density of more than 99%. The uniformity and grain size of the internal structure of the tungsten target cannot meet the increasingly demanding sputtering process

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