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Tungsten target manufacturing method

A production method and target technology, applied in the field of tungsten target production, can solve difficult problems and achieve the effect of small grain size and uniform internal structure

Active Publication Date: 2014-02-12
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] The problem solved by the present invention is that the density of the tungsten target produced by the existing powder metallurgy process is only about 93%, and it is difficult to achieve a full density of more than 99%. Moreover, the tungsten target produced by the existing powder metallurgy process The uniformity and grain size of the internal structure of the target cannot meet the increasingly demanding sputtering process

Method used

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Embodiment Construction

[0034] The inventors have found and analyzed that the existing powder metallurgy process commonly uses a hot pressing process (Hot Pressing, HP) or a hot isostatic pressing process (Hot Isostatic Pressing, HIP). The hot-pressing process is to put the prepared powder in the peripheral mold, and then place it in a vacuum hot-pressing furnace. Firstly, the powder is compacted, and then vacuumed to the set value, and then pressurized while heating up, until the pressure and temperature are uniform. When the set value is reached, keep the heat and pressure for a period of time, then cool with the furnace and come out of the furnace. The hot isostatic pressing process is to put the prepared powder into a prepared bag, and then degas the powder in the bag at a certain temperature and vacuum degree. After the treatment, the bag containing the powder Put into a hot isostatic pressing furnace for sintering, and then come out of the furnace.

[0035] Tungsten has a high melting point of...

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Abstract

A tungsten target manufacturing method comprises the steps of providing tungsten powder; adopting a hot pressing process to perform sintering forming of the tungsten powder, and forming tungsten target blank; and after sintering forming, adopting a hot isostatic pressing process to enable the tungsten target blank to be subjected to densifying processing to form a tungsten target. The tungsten target with the full density of over 99.4% can be manufactured through the tungsten target manufacturing method; and the uniformity of the internal organizational structure and the grain size of the tungsten target meet a sputtering process with the requirement higher and higher.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten target. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved. [0003] Tungsten targets are often used in the vacuum sputtering process. Early tungsten targets were obtained by melting and casting. However, the density of tungsten targets formed by melting and casting is difficult to control. In order to overcome this problem, p...

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Application Information

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IPC IPC(8): B22F3/16B22F3/04
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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