Jet-assisted multi-pulse-width laser peeling method for crystal ingot

Abstract

The invention discloses a jet-assisted multi-pulse-width laser peeling method for a crystal ingot. The jet-assisted multi-pulse-width laser peeling method for the crystal ingot comprises the followingsteps: a laser machining system runs according to a first parameter, and a laser beam of the laser machining system is focused onto a first plane in a crystal ingot in the vertical direction; the laser beam is controlled to move according to a preset processing track until a first modified layer is machined on the crystal ingot by taking the first plane as a center; the laser machining system runs according to a second parameter, and the laser beam of the laser machining system is focused onto a second plane in the crystal ingot in the vertical direction, the laser beam is controlled to moveaccording to a preset processing track, a jet device is started simultaneously, and a fluid is jetted to the second plane of the crystal ingot in the horizontal direction; and the jet device continuesto run, and the crystal ingot is rotated around the central axis of the crystal ingot until a second modified layer is machined on the crystal ingot by taking the second plane as a center. The jet-assisted multi-pulse-width laser peeling method for the crystal ingot mainly solves the problem of dispersion of a crystal ingot peeling procedure; and the machining process is continuous, so that the machining efficiency of crystal ingot peeling is increased.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a jet-assisted multi-pulse width laser crystal ingot stripping method. Background technique [0002] Ingot stripping is the main way to obtain wafers. The quality and efficiency of ingot stripping are crucial factors affecting chip manufacturing. At present, laser processing is the preferred method for ingot stripping. [0003] The publication number is CN109909627A, and the Chinese invention patent titled a laser processing equipment for SiC crystal ingots discloses a typical method of laser processing and cutting crystal ingots. Two lasers are used in the process, and the method of separate processing at two different stations not only results in high hardware costs, but also separates the processes, which increases the equipment footprint and reduces processing efficiency. [0004] The publication number is CN109834858A, and the Chinese invention patent titled peelin...

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Problems solved by technology

[0003] The publication number is CN109909627A, and the Chinese invention patent titled a laser processing equipment for SiC crystal ingots discloses a typical method of laser processing and cutting crystal ingots. Two lasers are used in the process, and the method of separate processing at two different stations not only results in high hardware costs, but also separates the processes, which increases the equipment footprint and reduces processing efficiency

[0004] The publication number is CN109834858A, and the Chinese invention patent titled peeling device first performs laser processing on the crystal ingot, and then transmits ultrasonic waves to the crystal ingot through water to peel the crystal ingot. This method also has the problem of process dispersion and low processing efficiency. good

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