SiC single crystal growth device and liquid phase epitaxy SiC single crystal growth method

Abstract

The invention relates to a SiC single crystal growth device and a liquid phase epitaxy SiC single crystal growth method. According to the SiC single crystal growth device, the top and the bottom of a furnace body of a high-temperature induction heating furnace are correspondingly and coaxially provided with a seed crystal shaft and a rotating shaft which can rotate oppositely and reversely, and the first end of the rotating shaft is fixed to the bottom of a graphite crucible; a first non-carbon crucible is arranged in the graphite crucible, and a second non-carbon crucible is fixed at the first end of the seed crystal shaft; a SiC crystal ingot and Fe powder serving as a cosolvent are respectively accommodated in the first non-carbon crucible from bottom to top; SiC seed crystals are accommodated in the second non-carbon crucible; the temperature of the high-temperature induction heating furnace is raised, argon is loaded when the temperature is raised to 800-1000 DEG C, and then SiC grows in the argon atmosphere of 1500-1700 DEG C; and along with the rise of the temperature, the crystal ingot SiC is dissolved in the molten Fe solvent to form a Fe solution, and then the Fe solution is transmitted to the SiC seed crystal. According to the SiC single crystal growth device provided by the invention, the growth structure and the thermal field distribution can be improved, and the problems of crystal position dislocation and crucible fragmentation are avoided.

Description

technical field [0001] The invention relates to the technical field of SiC single crystal preparation, in particular to a SiC single crystal growth device and a liquid phase epitaxy SiC single crystal growth method based on the device. Background technique [0002] With the maturity of the development of the first-generation silicon semiconductor and the second-generation gallium arsenide semiconductor materials, their device applications are also reaching their limits. Silicon carbide (SiC) single crystal belongs to the third generation of semiconductor materials, that is, band-gap semiconductor materials. It has the advantages of high frequency, high power, high breakdown field, thermal conductivity and good chemical stability. It is expected to be used in low-resistance power devices. get applied. [0003] The methods for preparing SiC single crystal mainly include physical vapor transport method (PVT method), high temperature chemical vapor deposition method (HTCVD meth...

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Problems solved by technology

[0005] The main problem of liquid phase epitaxy SiC single crystal growth under the traditional sandwich structure is that the uneven thermal field will make the position of SiC crystallization usually occur on the inner wall of the crucible and the graphite suspender, and the graphite crucible is extremely fragile under the erosion of solvents. crack

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