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Single crystal furnace having auxiliary material adding mechanism and application thereof

A single crystal furnace and auxiliary material technology, which is applied in the directions of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of large variation in resistivity at the tail of the crystal ingot and inability to perform real-time control, and reduce the axial direction of the crystal ingot. The magnitude of resistivity fluctuation, the effect of providing quality and utilization, and improving uniformity

Active Publication Date: 2016-01-13
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this technology can alleviate the decrease in resistivity to a certain degree of purity, it cannot be adjusted in real time during the crystal growth process, and the change in resistivity at the tail of the crystal ingot is still relatively large, which cannot completely solve the problem of decrease in resistivity caused by segregation. question

Method used

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  • Single crystal furnace having auxiliary material adding mechanism and application thereof
  • Single crystal furnace having auxiliary material adding mechanism and application thereof

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Experimental program
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Effect test

Embodiment 1

[0029] for the present invention figure 1 The shown single crystal furnace is combined with the auxiliary feeding structure described in the present invention to grow a high resistance N-type single crystal silicon ingot with low axial resistivity fluctuation.

[0030] The Cz method is used to grow 8 inches of N-type single crystal silicon in the direction. Firstly, the coefficient of the load cell is calibrated by the standard weight, so that the weighing deviation is less than 3%. Subsequently, 120 kg of phosphorus-doped polysilicon raw material was put into the quartz crucible at one time. Process a p-type single crystal silicon rod of ? 13 atoms / cm 3 ; At the same time, process a groove at the position of 20mm from the end of the P-type monocrystalline silicon rod, and fix it on the auxiliary material fixture with a bolt after cleaning. Subsequently, close the main chamber 4 and the auxiliary chamber 3, evacuate, vent argon, turn on the power supply of the main heater...

Embodiment 2

[0034] for the present invention figure 1 The shown single crystal furnace is combined with the auxiliary feeding structure described in the present invention to grow N-type single crystal silicon ingots for power devices with ultra-low resistivity and low axial resistivity fluctuation.

[0035] The Cz method is used to grow an 8-inch N-type monocrystalline silicon ingot with direction, and the target resistivity value is 60-100Ω. Firstly, the weighing coefficient of the load cell 30 is calibrated by the standard weight, so that the weighing deviation is less than 3%. Subsequently, 120 Kg of boron-doped polysilicon raw materials were put into the quartz crucible at one time. Process a ?20×200mm Si-Ga alloy rod, the mass ratio of Ga element in the alloy rod is 0.1%, and at the same time process a groove at the position of 20mm from the end of the Si-Ga alloy rod, through cleaning treatment Afterwards, it is fixed on the auxiliary material fixture 34 with a bolt. Subsequentl...

Embodiment 3

[0039] for the present invention figure 1 The single crystal furnace shown in the present invention, in combination with the auxiliary feeding structure described in the present invention, grows a high-resistance P-type monocrystalline silicon ingot for power devices with low axial resistivity fluctuations. Generally, the resistivity is not lower than 50Ω.cm, and the resistivity The change rate requirement is preferably not higher than 15%.

[0040] The CZ method is used to grow 8-inch P-type single crystal silicon rods in the direction. Firstly, the coefficient of the load cell is calibrated by the standard weight, so that the weighing deviation is less than 3%. Subsequently, 120Kg of boron-doped polysilicon raw materials were put into the quartz crucible at one time, and the initial concentration of boron was 1.78E14atoms / cm 3 . Process a Si-P alloy rod with a size of ?20×200mm. The mass ratio of phosphorus in the alloy rod is 0.1%. A groove is processed at a position 20...

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Abstract

The invention provides a single crystal furnace having an auxiliary material adding mechanism and an application thereof. The auxiliary material adding mechanism is installed in the single crystal silicon growth furnace and is provided with an individual weighing device, so that the addition amount of auxiliary materials can be monitored and controlled in real time during auxiliary material addition, thereby achieving accurate control of doping concentration of the single crystal silicon. The single crystal furnace can stabilize axial resistivity of the single crystal silicon and can satisfy crystal ingot growth of the single crystal furnace with special doping requirement.

Description

technical field [0001] The invention relates to a single crystal furnace with an auxiliary feeding structure and its application, in particular to a single crystal silicon pulling furnace with an auxiliary feeding structure that can continuously add auxiliary dopants during the crystal ingot growth process. Background technique [0002] With the development of power electronics technology towards high frequency, energy saving, light weight, and miniaturization, new requirements are put forward for the frequency characteristics, switching characteristics, power capacity, power loss, high reliability, and low cost of power semiconductor devices. The new generation of silicon microwave devices, Schottky devices, field-controlled high-frequency power electronic devices and power integrated circuits require silicon single crystal substrate materials to be ultra-low resistance (1.8×10 -3 Ω·cm). At present, in the resistivity range of 0.002~0.005Ω·cm, heavily arsenic-doped silicon...

Claims

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Application Information

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IPC IPC(8): C30B15/04
Inventor 李秦霖山田宪治刘浦锋宋洪伟陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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