The invention relates to the technical field of
semiconductor manufacturing, in particular to an MEMS device and a preparation method thereof.The MEMS device comprises a substrate, a device layer and a cap sealing layer which are sequentially adjacent in the first direction; the substrate internally comprises cavity grooves and supporting columns which are alternately arranged in the second direction. The cap sealing layer comprises a substrate and a plurality of
semiconductor columns penetrating through the substrate in the first direction, and the
semiconductor columns and the substrate are isolated through isolation rings surrounding the semiconductor columns; the device layer comprises a first driving
electrode, a first movable driving comb tooth, a first beam, a first
anchor point, a second beam, a first movable detection comb tooth and a first detection
electrode which are sequentially arranged along a second direction; the first movable drive comb is connected with the first
anchor point via the first beam. At least one MEMS device which is excellent in
electrical isolation performance, good in thermal matching and high in electromechanical transformation sensitivity can be provided, and
signal crosstalk caused by overlarge stray
capacitance is avoided while vertical
interconnection leading-out of multiple paths of independent signals is achieved.