157 results about "Micro electrical mechanical systems" patented technology

The invention provides a symmetrical clamped micro-beam electric power sensing device based on MEMS resonators, and belongs to the technical field of MEMS sensing. The sensing device comprises a sensing assembly. The sensing assembly comprises a vibration beam, an excitation electrode, a tuning electrode and an auxiliary electrode. The two ends of the vibration beam in the axial direction of the vibration beam are connected with the auxiliary electrodes, and the exciting electrodes and the tuning electrodes are arranged at intervals in the length direction of the vibration beam and arranged on the same side of the vibration beam. Excitation voltage is applied to the excitation electrode so that the excitation electrode can excite the vibration beam to generate resonance. Tuning voltage is applied to the tuning electrode so that the tuning electrode can adjust the rigidity of the vibration beam according to the environment temperature, and the thermal power corresponding to the heat source can be inverted. The two sensing assemblies are arranged in a central symmetry mode, so that interference of electrostatic fields generated by the excitation electrodes and the tuning electrodes corresponding to different vibration beams can be weakened mutually. According to the invention, high-precision power inversion in a wide temperature range can be realized.

The invention relates to a micromirror element (200) as it can be used in micro-electro-mechanical systems (100), in particular for use in equipment (1) for semiconductor technology, and to a corresponding micro-electro-mechanical system (100) with at least one micromirror element (200). The micromirror element (200) comprises a mirror substrate (210) and a reflective coating (220) applied to the mirror surface (215) of the mirror substrate (210) which is intended to reflect, wherein at least one intermediate layer (230) is provided between the mirror substrate (210) and the reflective coating (220), wherein the at least one intermediate layer (230) is designed such that the at least one intermediate layer (230) together with the reflective coating (220) can be regarded as a combined layer (240) in relation to the mirror substrate (210) and the combined coefficient of thermal expansion of the reflective coating (220) and the at least one intermediate layer (230) corresponds essentially to the coefficient of thermal expansion of the mirror substrate (210) at least for a predetermined temperature.

The invention relates to a method for producing at least one micromirror element (200) as it can be used in micro-electro-mechanical systems (100), in particular for use in semiconductor technology equipment (1), and to a micro-electro-mechanical system (100) comprising corresponding micromirror elements (200). The process includes the following steps: - Providing a flat, two-sided mirror substrate (210); - Incorporating a predetermined shape at least on the side (215) of the provided mirror substrate (210) intended to be reflective; and - Applying a reflective coating (220) at least to the side (215) of the provided mirror substrate (210) intended to be reflective.

The provided is a design method for all-fused-silica capacitive planarized micro electro-mechanical systems (MEMS) gyroscope, including: determining a configuration of the MEMS gyroscope, including a substrate and a structural layer, the structural layer being a planar structure; forming a recess at one side of the substrate, and providing a boss in a center of the recess; on the structural layer, integrally forming a central anchor point, a support beam, a resonant ring, fixed electrodes, and a peripheral anchor point region in sequence from the center outward; forming a capacitive gap having a high-steepness structural sidewall and a high-aspect ratio between the resonant ring and each of the fixed electrodes; when the substrate and the structural layer are assembled, fixing the boss to the central anchor point, fixing a recess periphery to the peripheral anchor point region, and suspending the support beam and the resonant ring on the recess.

The invention discloses an equivalent verification method for frequency response characteristics of a force balance loop of a micromechanical gyroscope, and belongs to the technical field of micro electro mechanical systems. According to the invention, the low-frequency test signal is injected into the orthogonal suppression electrode, and the hardware symmetry of the I and Q paths is utilized, and the equivalent verification of the angular velocity detection main path is realized through the calibrated mapping relation. According to the method, the dependence of a traditional method on a high-cost angular vibration table is innovatively avoided, convenient and accurate testing of the frequency response characteristic can be directly achieved on the chip or module level, and the method has important significance on improvement of gyroscope performance testing efficiency and reduction of design cost.

The invention belongs to the technical field of MEMS (Micro Electro Mechanical System) manufacturing, and particularly relates to a deep corrosion method for a back cavity of an MEMS pressure sensor. Comprising the following steps: constructing a'preset reference-gradient rough corrosion-real-time correction-precise fine corrosion 'closed-loop control system: firstly, establishing a precise temperature-corrosion rate corresponding relation through a QC wafer experiment; according to the target depth of the back cavity, multiple rounds of gradient rate coarse corrosion processes are planned, the corrosion depths of all rounds are distributed according to the proportion from large to small, and the corrosion rate is decreased progressively along with the rounds through temperature regulation and control to rapidly approach 80%-95% of the target depth; the depth is detected immediately after each round of corrosion, and targeted correction of'parameter fine adjustment 'or'deviation compensation' is realized based on a double-threshold criterion; and finally, turning to multiple rounds of low-rate fine corrosion, continuing a gradient rate and a real-time correction strategy, and precisely closing a loop to a target depth. According to the invention, submicron level control of the depth of the back cavity is realized, the process stability and adaptability are high, and the performance consistency and the large-scale production yield of the MEMS pressure sensor are effectively improved.

The application relates to the technical field of photographic light source control, and discloses a soft light control method and a mobile terminal, wherein the soft light control method comprises the following steps: constructing a four-dimensional light field harmonic model, decomposing a target light effect into a time-space harmonic combination; decomposing the target light effect into a time-space mapping sequence to form light field microstructure control parameters; combining a micro-electro-mechanical system programmable reflection array and a liquid crystal spatial light modulator, cooperating with a multi-channel LED array to realize sub-millimeter light distribution control and microsecond light field dynamic reconstruction; establishing an accurate synchronization mechanism of a shooting device shutter and light effect change; providing a light effect animation programming interface based on key frames, supporting the definition of a dynamic change sequence of light trajectory, intensity and form; and through the fusion of microstructure light field control and time-space harmonic analysis, four-dimensional dynamic light sculpture is realized, and the technical problem that a traditional soft light control method can only adjust overall brightness and color temperature is solved.

The invention discloses a nonlinear acoustic transducer control method and system based on an Aubry-Mather set, and belongs to the technical field of acoustic transducers. The method comprises the following steps: firstly, based on an Aubry-Mather set theory, constructing a nonlinear vibration model used for describing nonlinear vibration of a transducer diaphragm; secondly, based on a nonlinear vibration model, regional piezoelectric driving and dynamic phase regulation are carried out to simulate a quasi-periodic fluctuation mode; then, on the basis of fluctuation characteristics disclosed by the nonlinear vibration model, a multi-diaphragm collaborative vibration system is constructed, and quasi-periodic superposition of sound waves is realized by optimizing diaphragm space layout; and finally, based on stiffness parameters in the nonlinear vibration model, integrating a micro electro mechanical system (MEMS) process and a nonlinear material, and realizing equivalent nonlinear stiffness on a physical device through gradient polarization design. The dynamic adaptability, the energy transfer efficiency and the high-frequency output performance of the transducer in a broadband range are effectively improved, and the transducer is particularly suitable for ultrasonic imaging and other high-frequency acoustic application scenes.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Disclosed are a MEMS sensor and a preparation method therefor. The sensor comprises a device and a cap, wherein the device comprises a grounding electrode; and a functional layer, wherein the functional layer is electrically connected to the grounding electrode. The cap comprises: a second substrate; a second dielectric layer, which is located on a first surface of the second substrate; and a third conductive layer, which is located on the surface of the second dielectric layer that is away from the second substrate, wherein at least part of the third conductive layer penetrates the second dielectric layer to be electrically connected to the second substrate; and the surface of the third conductive layer that is away from the second dielectric layer is bonded with the functional layer, and the second substrate is electrically connected to the grounding electrode by means of the third conductive layer and the functional layer. By means of the MEMS sensor and the preparation method therefor in the present invention, batch grounding of the MEMS sensor is realized.

The present disclosure provides a kind of overhanging island micro-electro-mechanical system thermoelectric performance testing device and preparation method, which can be applied to the technical field of semiconductor device, the thermoelectric performance testing device includes: substrate;Overhanging island structure includes first overhanging island, center overhanging island, third overhanging island, first overhanging island and second overhanging island are symmetrically suspended on the substrate;A plurality of first metal components are arranged on the first overhanging island, the center overhanging island and the second overhanging island;Wherein, in the case where the target to be measured is placed between the first overhanging island and the center overhanging island, the first signal is obtained by the first metal component corresponding to the first overhanging island, the second signal is obtained by the second metal component corresponding to the second overhanging island, the first signal and the second signal are differentially calculated, and the thermoelectric performance test result of the target to be measured is determined based on the result of differential calculation.

The invention relates to the technical field of MEMS (Micro Electro Mechanical System) sensors, and discloses a cap cilia MEMS vector hydrophone, which comprises cap cilia used for sensing sound to generate vibration for transmission; the center mass block is arranged at the bottom of the cap-shaped cilium, the cap-shaped cilium is located in the center of the top of the center mass block, and the center mass block is used for receiving vibration transmitted by the cap-shaped cilium and diffusing the vibration; the four cantilever beams are fixedly connected to the front face, the rear face, the left face and the right face of the center mass block respectively and used for receiving vibration transmitted by the center mass block and generating deformation. And the square frame is arranged outside the four cantilever beams. The cap-shaped cilia has a larger sound wave receiving area than the traditional cilia, the cap-shaped structure can generate larger on-beam stress on the cantilever beam when receiving sound pressure signals with the same size, so that the piezoresistor generates larger resistance change, the hydrophone is simple and mature in manufacturing process, the cap-shaped cilia does not need secondary integration, and the cost is low. And the consistency of the hydrophone is ensured.

The embodiment of the present application provides a projection device and method, the projection device comprises: a pixel array arranged on a substrate, the pixel array has a light emitting characteristic; a cantilever beam arranged on the substrate, used for fixing a micro-electro-mechanical system (MEMS) mirror piece, the cantilever beam is arranged outside the pixel array, the MEMS mirror piece is used for scanning the pixel array, the cantilever beam and the MEMS mirror piece constitute a MEMS mirror; a driver in communication with the pixel array and the MEMS mirror piece, used for driving the pixel array with the light emitting characteristic to develop color; the driver is also used for controlling the MEMS mirror piece to rotate on the cantilever beam to scan the pixel array to obtain a projection image. The present application can make a small volume projection device provide a projection image with higher resolution, and realize the purpose of optimizing volume and improving resolution.

The invention relates to the technical field of metal materials, and discloses a shape memory alloy film and a preparation method and application thereof. The shape memory alloy film comprises the following components: 50-55 at.% of Ni, 40-45 at.% of Ti, 3-5 at.% of Cu and 2-4 at.% of M, and M is selected from one or more of Zr, Hf and Nb. The shape memory alloy film has remarkable superelasticity, the recoverable strain of the shape memory alloy film can reach 8% or above, meanwhile, the compressive yield stress exceeds 1.5 GPa, and the shape memory alloy film shows excellent cycle stability. The preparation method is simple in process and high in controllability, a new scheme is provided for solving the problem of unstable performance of an existing NiTi-based film, and the preparation method is particularly suitable for high-performance micro devices such as a micro electro mechanical system.

The application belongs to the technical field of micro electro mechanical system sensors, and discloses an acceleration sensor chip with a DLC optimized structure and a preparation method thereof; in the piezoresistive acceleration sensor chip, an SOI substrate is bonded to boron glass through a substrate frame, and a center mass is connected to the substrate frame through four embedded micro-beams arranged in a cross shape; four piezoresistance strips are arranged on the four embedded micro-beams, and the four piezoresistance strips are connected into a Wheatstone full bridge through surface metal leads deposited on the SOI substrate and connected with pads deposited on the SOI substrate; wherein, a DLC film is deposited on the SOI substrate, and the DLC film covers the surface metal leads, the four piezoresistance strips and the area of the SOI substrate except the pads. The application can improve the sensitivity of the sensor while ensuring the strength of the sensitive structure; the protection of the piezoresistance strips is realized, and the reliability of the sensor can be improved.

The invention relates to the technical field of micro electro mechanical system devices, and discloses a low-threshold MEMS inertial switch. A low threshold MEMS inertial switch includes an anchor region, a mass, a holding contact, a switch contact, a drive-support beam. The anchor areas are oppositely arranged at intervals in the x direction; the mass block is arranged between the anchor areas and is spaced from the anchor areas; the holding contact is arranged in the mass block; the switch contact is arranged in the mass block and is separated from the holding contact in the y direction; the driving-supporting beams are distributed on the two opposite sides of the mass block and connected with the anchor area so as to support and drive the mass block to move in the y direction. The switch provided by the invention has the advantages of low threshold triggering, low power consumption, high sensitivity, high switching speed, reliable structure and miniaturization.

The invention discloses a method for processing the surface of a cavity on a silicon substrate, which belongs to the technical field of semiconductor manufacturing and micro electro mechanical systems, and comprises the following steps of: forming a central hole distribution area and an edge hole-free area on the surface of a silicon wafer by using a hard mask and an etching process; placing the isolation pad between the edge non-hole areas of the two silicon wafers, and aligning the central hole distribution areas of the two silicon wafers to form a silicon wafer-isolation pad-silicon wafer stacked structure; the isolation pad does not shield the central hole flow channel; and placing the stacked silicon wafers and the isolation pad in a hydrogen atmosphere for annealing treatment to form a uniform cavity. According to the invention, the defects of many surface defects, high roughness and poor process stability of the silicon substrate cavity caused by the edge effect of the hydrogen flow field in the existing SON process are overcome, the optimized hydrogen flow channel is formed through wafer stacking, the hydrogen density distribution is improved, the reaction probability of oxygen atoms and silicon atoms is reduced, and the stable preparation of the high-quality and high-consistency cavity is realized.

The application claims a MEMS frequency accurate tracking and locking method based on a resonant phase-locked loop (R-PLL). The application relates to the technical field of MEMS (micro-electro-mechanical system) resonator control and frequency tracking, and the method takes the output of a voltage-controlled oscillator as an interference signal, takes the physical response (such as weak electromagnetic leakage or acoustic radiation) of a disturbed MEMS device as a feedback signal, compares the phase difference between the feedback signal and a reference signal through a phase detector, adjusts the interference frequency, and forms a closed-loop locking system. The application adjusts the interference source frequency through a phase detector and a filter, can track the target resonant frequency drift caused by factors such as temperature change in real time, makes the MEMS resonator keep in a phase-locked state with the target resonant frequency, and ensures that the interference energy is always efficiently coupled.

The invention belongs to the technical field of micro electro mechanical systems and micro sensors / actuators, and discloses an electrostatic self-excitation cantilever beam device which comprises a potential floating insulation base, a conductive cantilever beam fixed on the potential floating insulation base, parallel electrodes located on the two sides of a free end and an electric brush adjacent to the free end. And self-excited vibration of the conductive cantilever beam under the action of electrostatic force and elastic restoring force is realized. The electrostatic self-excitation micro-beam device based on the new oscillation starting principle is provided aiming at the oscillation starting principle defect of an existing device, and compared with an original oscillation starting principle and device, the electrostatic self-excitation micro-beam device is lower in oscillation starting voltage, avoids interference of micro-beam suspension potential in the oscillation starting stage, and is high in vibration starting efficiency. And during working, the output of mechanical work or electronic signals is more stable, and the practical value is better.

The application provides airtight packaging structure of a cavity device, which comprises a semiconductor substrate, a first semi-open cavity is arranged on the front surface of the semiconductor substrate; a micro-electro-mechanical system layer is arranged above the front surface of the semiconductor substrate, a first region of the micro-electro-mechanical system layer and the first semi-open cavity form a first closed cavity; a displacement sensor is arranged in the first closed cavity; a cover plate is arranged above the micro-electro-mechanical system layer, a second semi-open cavity is arranged on the front surface of the cover plate at the position opposite to the first region of the micro-electro-mechanical system layer, and the second semi-open cavity and the first region of the micro-electro-mechanical system layer form a second closed cavity; and a bonding layer is arranged between the micro-electro-mechanical system layer and the cover plate, which is used for bonding the micro-electro-mechanical system layer and the cover plate together and sealing the second closed cavity. Compared with the prior art, the application can identify abnormal air leakage and air release of the cavity in the MEMS manufacturing process, provide basis for the improvement of the MEMS performance, improve the yield and reduce the cost.

A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity disposed in the supporting substrate, a stopper, and a MEMS structure. The stopper is disposed between the supporting substrate and the cavity, and an inner sidewall of the stopper is in contact with the cavity. The stopper includes a filling material surrounding a periphery of the cavity, and a liner wrapping around the filling material. The MEMS structure is disposed over the cavity and attached on the stopper and the supporting substrate.

The application relates to a tunable vertical cavity surface emitting laser structure, which comprises a vertical cavity surface emitting laser unit, a micro-electro-mechanical system device bonded with the vertical cavity surface emitting laser unit, an independently controllable piezoelectric material structure arranged between the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device, and a control unit connected with the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device, wherein the control unit adjusts the displacement and angle between the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device by controlling the voltage applied to the piezoelectric material structure. The tunable vertical cavity surface emitting laser structure is distinguished from the prior art in function in that coaxial parallel control and bidirectional driving are provided, and the biggest feature of the structure is that a plurality of independently controllable piezoelectric material structures are introduced in the bonding area, so that the preliminary adjustment of the air gap and the coaxial effect of the overall light source device are realized.

Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and / or optical device.

The power relay has an actuator comprising a micro-electromechanical system stator assembly and a plunger assembly that moves along a central longitudinal axis between a first position and a second position, the plunger assembly comprising a plunger including a pair of ferromagnetic plates between which a magnet is located, the first of the pair of ferromagnetic plates being located between a first ferromagnetic layer and a second ferromagnetic layer of the stator assembly, and the second of the pair of ferromagnetic plates being located between a second ferromagnetic layer and a third ferromagnetic layer of the stator assembly. The contacts formed by the ferromagnetic plates and ferromagnetic layers may include an array of micro-machined bends or stabilized liquid-solid electrical contacts.

Provided herein is an apparatus comprising a silicon layer (100) and a spike (103) through the silicon layer (100) to provide an electrical feed-through (104) for a micro-electro-mechanical system (MEMS) resonator. A method of manufacturing the device is also provided herein.

A tactile human-user interface system provides a refreshable tactile display that communicates text and images. The system includes a processor and a set of transducers. The processor receives text and / or image input and defeatures any images in the input to produce a simplified image. The processor translates the input into tactile form, which it converts into a set of electrical signals associated with a set of pixels of a display. Each transducer of the set of transducers corresponds to a respective pixel of the set of pixels. The set of transducers receive, from the processor, the set of electrical signals. The set of transducers generates, in response to the set of electrical signals, tactile outputs, detectable by a finger of a human user, at locations corresponding to the set of pixels.

Provided are a MEMS-based material corrosion electrochemical measurement sensor, a preparation method therefor, and material corrosion electrochemical measurement equipment. The sensor includes a working electrode-auxiliary electrode module including a first silicon substrate, a working electrode and an auxiliary electrode, where the first silicon substrate is provided with a recess portion, and the working electrode, the auxiliary electrode and the recess portion form an accommodation space; and a reference electrode module including a second silicon substrate and a reference electrode, where the reference electrode is disposed on one side of the second silicon substrate and forms a protruding portion, and the second silicon substrate is provided with a through hole. The protruding portion is disposed in the accommodation space, and the first silicon substrate is fixedly connected to the second silicon substrate.

Systems and methods for monitoring batteries in user devices are disclosed. The user devices include mobile phones and laptops, in examples. The system includes a micro-electro-mechanical system (MEMS) ultrasound source, a MEMS ultrasound sensor, a signal drive and acquisition module (SDM), and a processor. The MEMS source and sensor are included within the user device and are disposed against the battery. The SDM configures the MEMS source to transmit an ultrasound pulse into the battery, and the MEMS sensor detects ultrasound reflected by or transmitted through the battery. The SDM collects the detected pulses, and the processor analyzes the detected pulses to determine states of the battery including a state of health, a state of charge and an instantaneous battery thickness measurement. For example, the SDM and the processor can be included within the user device, and / or the SDM and the signal processor can be incorporated into an integrated circuit.

Disclosed are techniques for acoustic limiters for micro-electrical-mechanical systems (MEMS) microphones and other devices. In an aspect, an acoustic limiter comprises a first housing and a second housing separated by a flexible membrane. The membrane has at least one opening to allow air to flow between the housings. The membrane flexes in response to acoustic pressure within the first housing. If the acoustic pressure is above a threshold value, the membrane flexes a distance into the second housing such that the rigid structure completely or partially blocks the one or more openings through the membrane, which limits airflow speed into the second housing, thus limiting the acoustic pressure within the second housing. In an aspect, the acoustic limiter protects a MEMS microphone element mounted to the second housing, the first housing being the microphone input.

The present application belongs to the field of semiconductor manufacturing monocrystalline silicon, and particularly relates to a semiconductor wafer surface treatment method based on selective intervention window. In view of the problem that the traditional process cannot simultaneously consider global uniform treatment and local problem repair, an intelligent closed-loop solution is proposed. The method comprises the following steps: firstly, an in-situ characterization system integrated with a micro-probe array is constructed to collect and decouple multi-dimensional state fingerprint maps reflecting the electrochemical activity and thermal diffusion characteristics of the wafer surface in real time; then, a neural network algorithm optimized by transfer learning is used to identify abnormal areas causing product failure, and the abnormal areas are defined as a dynamic and adaptive selective intervention window; a micro-electro-mechanical system hydraulic field array is driven to realize precise cooperation of ultrasonic micro-polishing contacts, multi-channel micro-nozzles and negative pressure adsorption micro-holes. The present application decouples macro-background treatment and micro-differentiated intervention, improves the processing yield, enhances the process robustness and reduces the comprehensive operation cost.