Nano generator

A technology of nanogenerators and nanowires, applied in electrical components, circuit devices, electromagnetic wave systems, etc., can solve problems such as high process assembly requirements, short working life of motors, and harsh operating conditions

Inactive Publication Date: 2010-05-19
LIAONING NORMAL UNIVERSITY
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  • Claims
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Problems solved by technology

[0004] In order to solve the problems of harsh operating conditions, short working life of the motor, and high requirements for process assembly in the existing nano-generator technology, the present invention proposes a

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Embodiment Construction

[0020] The semiconductor nanowires described in the present invention can be replaced by semiconductor nanobelts or semiconductor nanorods.

[0021] The metal material of metal film layer or metal nanowire described in the present invention is gold or platinum etc. can combine with ZnO or Ga 2 o 3 or SnO 2 Such N-type semiconductor nanowires form a metal material with Schottky contact characteristics.

[0022] The nano-array A1 of the present invention is composed of semiconductor nano-wires with inverse piezoelectric and electric polarization properties, and is installed on the metal support substrate A3 through subsequent reprocessing technology.

[0023] The principle of power generation of the present invention is as figure 2As shown, under the action of the alternating electromagnetic field 11 of the nanogenerator 14, under the joint action of the inverse piezoelectric and electric polarization effects, the polarization component of the electromagnetic wave must be on ...

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Abstract

The invention discloses a novel nano generator constructed by arrays of semiconductor nanorods, nanowires or nanobelts of ZnO, Ga2O3 or SnO2 and the like with inverse piezoelectric characteristic and electric polarization characteristic. The system comprises two nano arrays A and B, the end parts of the nano arrays are mutually contacted and oppositely placed, the nano array A consists of semiconductor nanowires with inverse piezoelectric characteristic and electric polarization characteristic; and the nano array B consists of metal nanowires which have a Schottky contact characteristic when the metal nanowires are contacted with the nano array A or semiconductor nanowires coated with metal films. The nanowires in the nano arrays generate inverse piezoelectric and electric polarization phenomenon by utilizing various high-frequency alternating electromagnetic signals and electromagnetic microwave radiation signals in the space, and certain positive and negative charge accumulation is formed on the surfaces of the nanowires so as to directly convert the various high-frequency alternating electromagnetic signals and electromagnetic microwave radiation signals in the space into electrical energy to be output in a form of electron flow to drive or control the loads such as an external nanodevice or a micro-electro-mechanical system and the like.

Description

technical field [0001] The invention relates to the technical field of nanometer power generation and power supply, in particular to a nanometer generator constructed by an array of semiconductor nanorods, wires or strips, such as ZnO, having inverse piezoelectric and electric polarization characteristics. Background technique [0002] At present, the power generation methods of the power generation system are mainly hydroelectric power generation, thermal power generation, solar power generation, chemical energy power generation, nuclear fuel power generation, etc. There are a lot of losses in the process, which increases the cost of power generation and electricity consumption. With the gradual popularization and miniaturization of contemporary microelectronics and nanoelectronic products, the scale and power consumption of electronic products are getting lower and lower, and the design scale of batteries is also getting smaller and smaller. In order to solve the problem ...

Claims

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Application Information

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IPC IPC(8): H02J17/00H02J50/00
Inventor 李梦轲张竞姜春华冯秋菊刘玲玲张欢
Owner LIAONING NORMAL UNIVERSITY
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