Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

a technology of supercritical fluid and mems sacrificial layer, which is applied in the direction of chemistry apparatus and processes, cleaning processes and equipment, and electromechanical/electrostrictive/magnetostrictive devices, etc., can solve the problems of high non-polarity of scfs, and affecting the effect of scfs

Inactive Publication Date: 2005-06-02
ADVANCED TECH MATERIALS INC
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Benefits of technology

[0007] The present invention relates to supercritical fluid-based compositions useful in semiconductor manufacturing for the etch...

Problems solved by technology

A major problem with fabricating MEMS structures is that as aqueous based etching of the sacrificial layer proceeds, stiction may occur, wherein the surface adhesion forces are higher than the mechanical restoring force of the microstructure.
However, etching with neat anhydrous HF can require up t...

Method used

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  • Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
  • Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
  • Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

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Embodiment Construction

[0017] The present invention is based on the discovery of supercritical fluid (SCF)-based etching compositions that are highly efficacious for the etching of sacrificial silicon-containing layers from semiconductor substrates. The compositions and methods of the invention are effective for etching sacrificial layers, including silicon and silicon oxide layers, and related post-etch residue removal from patterned wafers.

[0018] Because of its readily manufactured character and its lack of toxicity and negligible environmental effects, supercritical carbon dioxide (SCCO2) is a preferred SCF in the broad practice of the present invention, although the invention may be practiced with any suitable SCF species, with the choice of a particular SCF depending on the specific application involved. Other preferred SCF species useful in the practice of the invention include oxygen, argon, krypton, xenon, and ammonia. Specific reference to SCCO2 hereinafter in the broad description of the invent...

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Abstract

A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.

Description

FIELD OF THE INVENTION [0001] The present invention relates to supercritical fluid-based compositions useful in semiconductor manufacturing for the removal of sacrificial layers, e.g., silicon or silicon oxide, from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers. The compositions also have utility for removing post-ash and post-etch residue. DESCRIPTION OF THE RELATED ART [0002] Micro Electro Mechanical Systems (MEMS) are devices that integrate mechanical and electrical components on a single silicon wafer. The electrical and mechanical components are fabricated using traditional integrated circuit (IC) techniques and “micromachining” processes, respectively. Micromachining is used to produce a number of mechanical devices on the wafer that are able to sense and control the environment, including cantilever beams, hinges, accelerometers, microsensors, microactuators and micromirrors. [0003] The mechanical components on a MEMS wafer are created by de...

Claims

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Application Information

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IPC IPC(8): B08B7/00B81B3/00H01L21/306
CPCB08B7/0021B81C1/00936H01L21/02063B81C2201/117B81C2201/0108
Inventor KORZENSKI, MICHAEL B.BAUM, THOMAS H.GHENCIU, ELIODOR G.
Owner ADVANCED TECH MATERIALS INC
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