Epitaxial Growth Method of Current Spreading Layer

Abstract

The invention discloses an epitaxial growth method for a current expansion layer. The epitaxial growth method sequentially comprises the following steps of: processing a substrate, growing a low-temperature buffer layer GaN, growing a non-doped GaN layer, growing a Si-doped N type GaN layer, growing a SiInN / SiAlN super-lattice current expansion layer, growing a light emitting layer, growing a P type AlGaN layer, growing a Mg-doped P type GaN layer, and decreasing the temperature to cool. Conditions for producing the SiInN / SiAlN super-lattice current expansion layer are as follows: the pressure of a reaction chamber is kept at 300-400 mbar; the temperature is kept at 800-900 DEG C; and NH<3>, the flow of which is 30000-60000sccm, TMAl, the flow of which is 100-200sccm, TMIn, the flow of which is 1000-2000sccm, N<2>, the flow of which is 100-130L / min, and SiH<4>, the flow of which is 1-5sccm, are introduced.

Description

technical field

[0001] The present application relates to the technical field of LED epitaxial design application, in particular, to an epitaxial growth method of a current spreading layer. Background technique

[0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ; The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved, and the luminous efficiency, life, anti-aging ability, The antistatic ability and stability will increase with the improvement of the crystal quality of...

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