Current spreading electrode, semiconductor light emitting device and preparation method thereof

Abstract

The invention provides a current diffusion electrode, which comprises single crystal film layers and transparent conductive film layers. The single crystal film layers and the transparent conductive film layers are arranged in a complementary manner so as to form a single-layer composite film; the single-layer composite film can be in contact with a p-type nitride layer; and the single crystal film layers are made of transparent conductive oxide. The invention also provides a method for manufacturing the current diffusion electrode, a semiconductor emitting device with the current diffusion electrode, and a method for manufacturing the semiconductor emitting device. The single crystal film layers and the transparent conductive film layers are arranged in the complementary manner so as to form the single-layer composite film; the single-layer composite film can be in contact with the p-type nitride layer; if the single crystal film layers are in contact with a p-type nitride semiconductor, ohmic contact is easy to form, contact resistance is low, current diffusion is uniform, and electric properties of a nitride semiconductor device are improved; and besides, light transmission of the transparent conductive film layers is good, light penetration rate and light emergent efficiency of the transparent conductive film layers are high, and optical properties of the nitride semiconductor device are improved.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a current diffusion electrode, a preparation method and a semiconductor light emitting device. Background technique [0002] As wide bandgap materials, group III nitride materials such as gallium nitride (GaN), aluminum gallium nitride (GaAlN), indium gallium nitride (InGaN) and aluminum indium gallium nitride (InAlGaN) have high thermal conductivity, high dielectric Excellent characteristics such as electric constant, high electron saturation migration rate and high chemical stability, these characteristics make this series of materials have great application prospects in short-wavelength light-emitting devices, ultraviolet detectors, high-power microwave devices and high-temperature resistant electronic devices. . [0003] Since the high doping of p-type GaN has not been able to effectively break through, and there is no metal with a work function greater than the wor...

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Problems solved by technology

[0003] Since the high doping of p-type GaN has not been able to effectively break through, and there is no metal with a work function greater than the work function of p-type GaN (7.5eV) in nature, it is difficult to make low-resistance p-type GaN ohmic contacts.

At present, a Ni / Au ohmic contact widely used for p-type GaN can obtain a small low contact resistivity after annealing in air or oxygen; but this traditional p-type Ni / Au ohmic contact electrode has low The light transmittance prevents most photons from escaping from the electrode surface, which affects the light output power and brightness of the light-emitting device.

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