The invention relates to an LED (
Light Emitting Diode)
chip manufacturing technology, an LED
chip structure and an LED
chip packaging structure. According to the
manufacturing technology, wolfram-
molybdenum-
copper alloy (WMoCu) is used as a substrate. The wolfram-
molybdenum-
copper alloy substrate is a good choice for a high-power LED chip heat dissipation substrate as the wolfram-
molybdenum-
copper alloy substrate has the
thermal conductivity second only to that of a
silicon carbide substrate, the cost of the wolfram-molybdenum-
copper alloy substrate is far lower than that of the
silicon carbide substrate, and meanwhile the wolfram-molybdenum-
copper alloy substrate has the advantages of high
temperature resistance, low
expansion factor, high
specific heat capacity, good mechanical
machining property, easiness in manufacturing of mirror surfaces and the like. An LED chip in the invention sequentially comprises a wolfram-molybdenum-
copper substrate layer, a U-GaN buffer layer and a N-type GaN layer from bottom to top, wherein an InGaN / GaN multiple-
quantum well luminous layer and an N-
electrode are arranged on the surface of the N-type GaN layer, and a P-type AlGaN layer, a P-type GaN layer, a current expanding layer and a P-
electrode are also sequentially arranged above the InGaN / GaN multiple-
quantum well luminous layer. Correspondingly, the LED chip has the advantages that the currents of the LED chip are vertically distributed, the substrate has high
thermal conductivity and high reliability, the back surface of the luminous layer is a
metal reflecting mirror, the surface has a coarsening structure, and the extraction efficiency is high.