61results about How to "Good light extraction efficiency" patented technology

The invention discloses a manufacturing method of a light source module, an optical plate, and a master mould and a sub-mould of the optical plate. The optical plate comprises a substrate, a plurality of first microstructures, a plurality of second microstructures and a plurality of third microstructures. The substrate has a first area, a second area and a third area, and the second area is between the first area and the third area. A plurality of the first microstructures are arranged on a surface of the substrate in the first area at a predetermined spacing. A plurality of the second microstructures are arranged on the surface of the substrate in the second area. A plurality of the second microstructures have paired mutual connection at least, and a connection and the surface of the substrate are coplanar. A plurality of the third microstructures are arranged on the surface of the substrate in the third area, and a plurality of the third microstructures have paired partial superposition at least; wherein, the first microstructures, the second microstructures and the third microstructures have circular arc-shaped tips respectively. The method can help prevent moire generation, provide uniform and concentrated beams and be used for manufacturing a concaved microstructure mould and a convex microstructure mould with circular arc-shaped tips, and the optical plate with high light extraction efficiency.

The invention discloses a low-attenuation high-lighting effect LED lighting device and a preparation method thereof, and relates to a semiconductor LED lighting device and a preparation method thereof. The lighting device comprises a heat dissipation plate is equipped with an aluminum basal plate, a blue LED chip is fived on the aluminum basal plate and the outer cover of the blue LED chip is a transparent cover. The preparation process is as follows: bonding material is filled on the aluminum basal plate; the luminescent material is fixedly positioned on the bonding material of the aluminum basal plate; the bonding material is baked and dried; a gold wire is used to connect the electrode; the transparent cover material and the fluorescent powder are molded to form the transparent cover; the transparent cover is fixed on the aluminum basal plate; the aluminum basal plate is fixed on a heat-dissipating aluminum plate; the filling material is filled into the space between the aluminum basal plate and the transparent cover; the LED lighting device is baked or dried at ambient temperature; The invention can prolong the service life of the LED lighting device, and promote the luminescence efficiency and the consistency of light and color.

The invention discloses a high-efficiency nano-structure light emitting diode (LED) and design and fabrication methods thereof. The design method comprises the following steps of 1) designing a period of a nanopillar array by a Bragg diffraction theory; 2) designing the diameter and the height of a nanopillar by an effective refractive index and enhanced thin film transmittance; and 3) fabricating a nanopillar array structure by nanosphere mark etching or other nanometer technologies. The high-efficiency nano-structure LED is ingenious in design and can be produced at a large scale, and a planar-structure LED chip with high efficiency is fabricated by optimally designing the nanopillar structure. With the design and fabrication methods of the high-efficiency LED, disclosed by the invention, the nanopillar array structure is designed on an ITO layer of a transparent electrode of the LED, and the high-efficiency planar-structure LED is fabricated.

The invention discloses a nano-patterned substrate and a manufacturing method thereof. The nano-patterned substrate is manufactured through sputtering an AlN layer on a sapphire substrate; annealing the AlN layer and then forming a nano-pattern on the annealed AlN layer. The substrate has the characteristics of being simple in manufacturing process and low in cost, the quality of AlN crystal and the light extraction efficiency of a UV-LED (deep ultraviolet light-emitting diode) can be greatly improved, and the nano-patterned substrate is a necessary product for later growth of the deep ultraviolet LED.

The invention discloses a light emitting diode chip and making method thereof, wherein, the chip comprises an external spreading wafer which is formed on a sapphire substrate, an N type zone and a P type zone of the external spreading wafer are covered with a metal electrode layer which comprises a transparent metal layer and a reflection layer and has a metal layer under convex points and metal convex points; a soleplate for flip chip which is provided with a metal line layer and convex points formed on the metal line layer; wherein, the N type zone surrounds the P type zone as large as possible, and the N type zone is communicated with the metal electrode layer covered on the N type zone and P type zone is divided into a plurality of zones by the N type zone and the metal electrode layer. The metal convex points of the P type zone are evenly distributed on a plurality of divided zones. The invention improves the current distribution conditions by optimized design for device electrode so as to improve the performance and life-span of devices. In addition, the flip chip joint point strength on the electrode and thermal conductivity performance of the device are further improved.

The invention provides an organic electroluminescent device, including a light transmission substrate, and a light extraction layer, an anode, an organic luminous functional layer and a cathode which are stacked on the light transmission substrate in sequence. The light extraction layer includes a plurality of oxide layers parallelly arranged on the surface of the light transmission substrate at intervals, a sulfide layer that covers the surfaces of the light transmission substrate and the oxide layers, and a transparent polymer film that covers the surface of the sulfide layer, the oxide layers are in the shapes of long strips, oxides are one or more of titanium dioxide, silicon dioxide and zirconium dioxide, the thickness of the oxide layers is 5 to 10 [mu]m, and the sulfide layer is a continuous thin film layer and has a wave-shaped curved surface structure. According to the organic electroluminescent device, through the arrangement of the light extraction layer, a critical angle of total reflection of an interface of the light transmission substrate is increased, thereby increasing the light extraction efficiency between the light transmission substrate and the anode, and improving the luminous efficiency of the device. The invention also provides a preparation method of the organic electroluminescent device.

The invention discloses an organic light-emitting device. The organic light-emitting device comprises a substrate, and a first electrode, a luminous layer and a second electrode that are stacked on the substrate in sequence; the first electrode comprises an electronic control birefringent material film layer and multiple conductive film layers that are arranged in a laminated manner; and the conductive film layers are partially arranged on the same side of the electronic control birefringent material film layer. The organic light-emitting device provided by the invention can regulate and control the reflectivity of the first electrode through the electronic control birefringent material film layer for regulating and controlling a microcavity length so as to realize high luminous efficiency; a method for regulating and controlling the microcavity length through a multi-layer luminous layer structure in the prior art is also avoided; meanwhile, the device is simple in structure and mature in technology; and the production cost is effectively reduced and the product yield is improved.

Disclosed is a gallium nitride compound semiconductor light-emitting device having high light extraction efficiency and low driving voltage (Vf). Specifically disclosed is a gallium nitride compound semiconductor light-emitting device wherein a light-transmitting conductive oxide film containing a dopant is arranged on a p-type semiconductor layer. In this gallium nitride compound semiconductor light-emitting device, the dopant concentration at the interface between the p-type semiconductor layer and the light-transmitting conductive oxide film is set higher than the bulk dopant concentration of the light-transmitting conductive oxide film, thereby reducing the contact resistance between the p-type semiconductor layer and the light-transmitting conductive oxide film.

The invention is a reflection-type light-projecting device, comprising a light-guiding cover with reflecting characteristic and a directional light source, wherein the light-guiding cover has a reflection surface of Fresnel structure which uses Fresnel lens principle and converts the geometrical reflection surface to an equivalent reflection surface to be a plane, a chamber or a combination, the reflection surface of Fresnel structure is arranged at the bottom of the light-guiding cover, the light source is arranged on the side wall of the light-guiding cover, adjusting the light direction to form a certain engageable angle with the Fresnel structure can make the reflecting light emitted in certain angle from the light-guiding cover, to generate collimated light with high efficiency and high alignment.

The invention provides an organic light emission diode device. The organic light emission diode device comprises a substrate and an anode, a light emission functional layer and a cathode which are sequentially laminated on the substrate, a light matching layer and a light extraction layer are sequentially arranged on the surface of the cathode, the material of the light extraction layer comprises nanoparticles and a polymer material, the nanoparticles are ceramic or high-polymer material particles with the grain size of 50 to 1,500 nanometers, the polymer material is a heat cured polymer or photo cured polymer material, the thickness of the light extraction layer is 10 to 100 micrometers, the material of the light matching layer is a mixed material formed by metal and an organic material, the metal is silver, aluminum or magnesium, and the organic material is N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, copper phthalocyanine or 8- hydroxyquinoline aluminum. The luminous efficiency of the cathode of the organic light emission diode device is high, so that the luminous efficiency of the device is improved. The invention also provides a fabrication method of the organic light emission diode device.

The invention provides a current diffusion electrode, which comprises single crystal film layers and transparent conductive film layers. The single crystal film layers and the transparent conductive film layers are arranged in a complementary manner so as to form a single-layer composite film; the single-layer composite film can be in contact with a p-type nitride layer; and the single crystal film layers are made of transparent conductive oxide. The invention also provides a method for manufacturing the current diffusion electrode, a semiconductor emitting device with the current diffusion electrode, and a method for manufacturing the semiconductor emitting device. The single crystal film layers and the transparent conductive film layers are arranged in the complementary manner so as to form the single-layer composite film; the single-layer composite film can be in contact with the p-type nitride layer; if the single crystal film layers are in contact with a p-type nitride semiconductor, ohmic contact is easy to form, contact resistance is low, current diffusion is uniform, and electric properties of a nitride semiconductor device are improved; and besides, light transmission of the transparent conductive film layers is good, light penetration rate and light emergent efficiency of the transparent conductive film layers are high, and optical properties of the nitride semiconductor device are improved.

The invention provides an organic light emission diode device which comprises a substrate, an anode, a light emission functional layer and a cathode, the cathode comprises a first doping layer and a second doping layer which are sequentially laminated, the material of the first doping is a mixed material formed by organic particles and metal, the mass rate of the organic particles to the metal is (0.6-1.2):1, the grain size of the organic particles is 10 to 100 nanometers, the organic particles are an electron-transmitted organic material, the material of the second doping layer is a mixed material formed by inorganic particles and metal, the mass rate of the inorganic particles to the metal is (0.02-1):1, the grain size of the inorganic particles is 10 to 50 nanometers, the inorganic particles are one or more of silicon monoxide, silicon dioxide, titanium dioxide and tungsten oxide, and the metal is elementary substance of gold, silver, aluminum or magnesium. The luminous efficiency of the cathode of the organic light emission diode device is high, therefore, the luminous efficiency of the device is improved. The invention also provides a fabrication method of the organic light emission diode device.

The invention discloses a large-size light guide plate. A plate body is equally divided into four parts. Silk-screen lattice points on the plate body are divided into four point units. The reflecting face of each plate part is divided into an L-shaped area and a large rectangular area. The L-shaped area is located at the connection of the plate part and the adjacent plate body. The large rectangular area is divided into a first right triangle area and a second right triangle area. Each point unit comprises silk-screen graded area in the first right triangle area, a silk-screen snap in the second right triangle area and an invariable area in the L-shaped area. Lattice points in the graded area and the snap area are arrayed and distributed on the light entering direction of two sides; wherein, diameters of the lattice points are increased gradually along the light entering direction of the two sides, and change values of the graded area are smaller than that of the snap area. Diameters of the lattice points in the invariable area are increased gradually on the direction of the light entering direction of the contacting side face of each area, and the diameters of the lattice points are constant on the direction of the light entering direction of the non-contacting side face. By the aid of the large-size light guide plate, light irradiating effect and light irradiating efficiency are guaranteed.

The invention provides a coarsening structure, a coarsening surface and a coarsening layer of an optoelectronic element and a manufacturing method of the optoelectronic element. The optoelectronic element with double-scale coarsening structures is characterized in that: impurities are doped in an extension process of a semiconductor of the optoelectronic element to allow the semiconductor to growa plurality of island bodies; subsequently, the extension temperature is lowered so as to continuously form a plurality of pin holes on the plurality of island bodies, wherein the pin holes are distributed on the top parts and side faces of the island bodies, so the total internal reflectivity of rays in the optoelectronic element is greatly reduced and the light intensity performance of the optoelectronic element is enhanced. Compared with the conventional art, the process of the invention has the advantages of low pollution, simple process, low cost, better light extraction efficiency, bigger effective area of double-scale light scattering surface and the like.

The invention discloses a display apparatus, a backlight module thereof, and a method for assembling the backlight module. The backlight module comprises a pedestal, a light guide plate, and a light source, wherein the light guide plate comprises a corner-lacking portion; the light source can be arranged upon the pedestal in a rotary manner; and one lighting surface of the light source is applied to one light-incoming surface of the corner-lacking portion.

The invention discloses a patterned substrate of an LED chip and an LED chip. Patterns of the substrate consist of a plurality of identically-shaped spherical caps arranged on the surface of the substrate, the height h of each spherical cap is 75-85 percent of the radius R of the sphere corresponding to the spherical cap, and the distance d between the edges of the adjacent spherical caps is 30-50 percent of the radius r of the bottom surface of the spherical caps. Compared with the prior art, the patterned substrate has better light extraction efficiency than a substrate with hemispherical patterns with the same bottom surface radius, is simpler in actual processing and facilitates popularized application.

The invention relates to a light guide plate, a backlight module and a display device thereof. The light guide plate comprises a plate body and an optical microstructure pattern, wherein the optical microstructure pattern is distributed on the surface of the plate body and comprises a plurality of micro concave holes; the periphery of each of the micro concave holes is provided with at least one recessed part having a molten surface; and the depth of each recessed part is smaller than that of each micro concave hole. The invention has the advantages that: the possibility for protrusions at the peripheries of the micro concave holes to fall off to fill the micro concave holes can be reduced or avoided, and the optical guide rotation performance of the optical microstructure is prevented from being degraded after the light guide plate is manufactured. In addition, after the light guide plate is arranged in a display, the joint tightness of the light guide plate and an optical film is improved, the excellent light-extraction efficiency is kept, the optical film is prevented from being broken, and the service life of the product is prolonged.

The invention discloses an optimized light-emitting diode (LED) chip patterned substrate. A Pattern of the LED chip patterned substrate is composed of a plurality of regular hexagonal pyramids with the same shape, the regular hexagonal pyramids are arranged on the surface of the LED chip patterned substrate, dip angles Alpha of the regular hexagonal pyramids are 55 degrees to 60 degrees, and edge distances between regular hexagonal pyramids next to each other are 1.0-1.2 Mum. Compared with the prior art, the LED chip patterned substrate has the advantages that luminous efficiency of the patterned substrate LED chip is greater than that of a ordinary patterned substrate LED chip, available effective light rays are increased greatly, and external quantum efficiency of the LED chip is improved. What is more, the pattern of regular hexagonal pyramids is coincident with a lattice structure of GaN, so the LED chip patterned substrate is beneficial for epitaxial growth of high quality GaN crystals, quality of epitaxy is further improved, and accordingly internal quantum efficiency of the LED chip is improved.

The invention relates to a method for improving the uniform distribution of light sources and a structure thereof. The method for improving the uniform distribution of the light sources and the structure thereof are that through arranging a plurality of light source chips on a base of at least one curved surface, each light beam emitted by each light source chip can be partially superposed and are further mutually compensated in light shape to obtain the uniform and bright light sources. Therefore, through the method, the uniform light sources can be obtained without optical element, so that the cost can be effectively controlled, and good light emitting efficiency can be maintained.