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SiC-substrate-based perpendicular structural GaN-based ultraviolet LED (Light Emitting Diode) and production method thereof

A vertical structure and substrate technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult substrate peeling, high resistance of n-AlGaN layer, poor current dispersion, etc., to improve light extraction efficiency and good heat dissipation Ability, the effect of solving technical difficulties

Inactive Publication Date: 2014-04-16
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the conventional substrate adopts the flip-chip structure, the electrodes on the same surface are used, and the resistance of the n-AlGaN layer is high, and the current dispersion is not good.
The vertical structure is that UV LEDs can solve this problem, but conventional substrates are difficult to achieve substrate peeling due to various limitations

Method used

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  • SiC-substrate-based perpendicular structural GaN-based ultraviolet LED (Light Emitting Diode) and production method thereof
  • SiC-substrate-based perpendicular structural GaN-based ultraviolet LED (Light Emitting Diode) and production method thereof
  • SiC-substrate-based perpendicular structural GaN-based ultraviolet LED (Light Emitting Diode) and production method thereof

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preparation example Construction

[0026] A method for preparing a GaN-based ultraviolet LED with a vertical structure based on a SiC substrate of the present invention specifically comprises the following steps:

[0027] Step 1: Use metal organic chemical vapor deposition (MOCVD) to epitaxially grow a buffer layer 2, an n-AlGaN layer 3, a UV-luminescent multiple quantum well layer 4, and a p-GaN layer 5 on a SiC substrate 1 in order to obtain a GaN-based UV LED structure, see figure 1 . The ultraviolet light-emitting multiple quantum well layer 4 is composed of one or more of AlGaN containing Al components, AlInN and AlInGaN containing Al and In components capable of emitting ultraviolet light, and the emission wavelength of the ultraviolet light is adjustable.

[0028] Step 2: sequentially prepare the ohmic reflective layer 6 and the metal bonding layer 7 on the p-GaN layer 5, see figure 2 ; The ohmic reflective layer 6 can be made of silver and its compounds, and the metal bonding layer 7 can be made of m...

Embodiment 1

[0033] A method for preparing a GaN-based ultraviolet LED with a vertical structure based on a SiC substrate of the present invention comprises the following steps:

[0034] Step 1: Using metal-organic chemical vapor deposition (MOCVD), AlN is used as a buffer layer 2 on a SiC substrate 1 to epitaxially produce an N-type AlGaN film with a high Al composition, and then grow multiple AlGaN quantum wells and p-GaN in sequence The thin film forms the epitaxial structure of the UV LED.

[0035] Step 2: Evaporate an ohmic reflective layer 6 of Ag / Ti / Au material on the p-GaN layer 5 by using electron beam evaporation equipment, and then evaporate an Au / Sn metal bonding layer 7 .

[0036] Step 3: The device is bonded to the Cu / W alloy substrate 8 with the plating layer as the contact surface through a bonding machine.

[0037] Step 4: Use the substrate thinning technology to thin the SiC substrate 1 to less than 100 microns, and then use ICP to etch the SiC substrate 1 and the buffer...

Embodiment 2

[0040] A method for preparing a GaN-based ultraviolet LED with a vertical structure based on a SiC substrate of the present invention comprises the following steps:

[0041] Step 1: Use metal-organic chemical vapor deposition (MOCVD) to epitaxially form an N-type AlInGaN film with a high Al composition on the SiC substrate 1 with AlN as a buffer layer 2, and then grow AlInGaN multiple quantum wells and p-type GaN films in sequence An LED epitaxial structure is formed.

[0042] Step 2: Evaporate an ohmic reflective layer 6 of Ag / Ti / Au material on the p-GaN layer 5, and then evaporate an Au / Sn metal bonding layer 7.

[0043] Step 3: bonding the above-mentioned epitaxial wafer to the Si substrate.

[0044] Step 4: The SiC substrate 1 and the buffer layer 2 are removed by a combination of physical grinding and plasma etching.

[0045]Step 5: Finally, an n-type electrode is prepared on n-type AlGaN to realize a vertical GaN-based ultraviolet LED.

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Abstract

The invention belongs to the technical field of semi-conductor luminescent devices and production thereof and discloses a SiC-substrate-based perpendicular structural GaN-based ultraviolet LED (Light Emitting Diode) and a production method thereof. The production method of the SiC-substrate-based perpendicular structural GaN-based ultraviolet LED comprises firstly producing a GaN-based ultraviolet LED structure on a SiC substrate; producing an ohm reflecting layer and a metal bonding layer on a p-GaN layer; performing thermocompression bonding on prepared epitaxial wafer and electric and thermal conductive substrate of the metal bonding layer; thinning the SiC substrate and removing the SiC substrate; performing shape photoetching on a n-ALGaN layer, evaporating metal electrodes and producing into the ultraviolet LED. According to the production method of the SiC-substrate-based perpendicular structural GaN-based ultraviolet LED, material growing quality is good due to the fact that the substrate of the ultraviolet LED is made of SiC materials; current distribution of the ultraviolet LED is more uniform due to the fact that the electric and thermal conductive substrate can be served as the p-GaN electrode and can provide support; technological difficulties in epitaxial technology are solved, SiC negative influences to ultraviolet light absorption are avoided and the external quantum efficiency of the devices are improved by a large margin due to the fact that the substrate stripping technology can completely strip the SiC substrate which is strong in function of absorbing the ultraviolet light.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, and in particular relates to a GaN-based ultraviolet LED with a vertical structure based on a SiC substrate and a preparation method thereof. Background technique [0002] At present, the products in the ultraviolet LED market mainly only involve LEDs in the UVA band (320-420nm), and it is difficult to manufacture LEDs in the UVB (275-320nm) and UVC (200-275nm) bands with high efficiency. The reason is that the manufacture of LEDs in both UVB and UVC bands requires an AlGaN epitaxial layer with a high Al composition to achieve the required bandgap width, while several traditional epitaxial substrates such as sapphire and silicon are used in the process of UV LED epitaxial devices. For example, the lattice mismatch between sapphire and AlN buffer layer is large, and the stress caused will cause cracks in the epitaxial layer; and although SiC has o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/0093
Inventor 梁红伟柳阳杜国同申人升夏晓川
Owner DALIAN UNIV OF TECH
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