Current diffusion electrode, semiconductor emitting device, method for manufacturing current diffusion electrode and method for manufacturing semiconductor emitting device
A technology of current diffusion and light-emitting devices, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that affect the light output power and brightness of light-emitting devices, p-type GaN cannot effectively break through, p-type GaN ohmic contact is difficult, etc. Achieve improved electrical properties, low forward voltage, and low contact resistance
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[0039] Please refer to figure 2 Shown, the present invention also provides a kind of preparation method of current spreading electrode, and described method comprises the following steps:
[0040] S11. Depositing a single crystal thin film layer on the p-type nitride layer by MOCVD method;
[0041] S12. Coating photoresist on the single crystal thin film layer and performing photolithography treatment to obtain a preset photoresist pattern;
[0042] S13. Etching and removing the single crystal thin film layer not protected by the photoresist to obtain a complementary arrangement pattern of the single crystal thin film layer and the p-type nitride layer;
[0043] S14. Depositing a layer of transparent conductive film by low-temperature evaporation on the pattern in which the single crystal thin film layer and the p-type nitride layer are complementary arranged;
[0044] S15 , stripping and stripping, removing the photoresist and the transparent conductive film attached to th...
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