Gallium nitride compound semiconductor light-emitting device and method for manufacturing same
A light-emitting element and manufacturing method technology, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of increased number of processes, increased manufacturing costs, and damage to the surface of gallium nitride-based compound semiconductors, etc., to reduce contact resistance, The effect of high light extraction efficiency
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no. 1 approach
[0101] Hereinafter, regarding the first embodiment of the gallium nitride-based compound semiconductor light-emitting device of the present invention, reference will be made as appropriate. Figure 1~4 while explaining.
[0102] shown in figure 1 The gallium nitride-based compound semiconductor light-emitting element 101 of this embodiment is schematically configured such that an n-type GaN layer 112 , a light-emitting layer 113 , and a p-type GaN layer (p-type semiconductor layer) 114 are formed on a substrate 111 in this order. On the aforementioned p-type GaN layer 114 of the stacked gallium nitride-based compound semiconductor element, a positive electrode 115 formed of a light-transmitting conductive oxide film containing a dopant is stacked, and the p-type GaN layer 114 and the positive electrode (light-transmitting The dopant concentration at the interface of the conductive oxide film 115 is higher than that of the bulk of the translucent conductive oxide film forming ...
experiment example 1
[0144] image 3 , shows a schematic cross-sectional view of an epitaxial structure produced for use in the gallium nitride-based compound semiconductor light-emitting device of this example. and, in figure 1 and figure 2 , shows a schematic cross-sectional view and a schematic plan view of the gallium nitride-based compound semiconductor light-emitting device of the present invention, and will be described below with appropriate reference.
[0145] (Manufacturing of GaN-based compound semiconductor light-emitting devices)
[0146] The multilayer structure of the gallium nitride-based compound semiconductor light-emitting element 120 is composed of a substrate 121 including a c-plane ((0001) crystal plane) of sapphire, with a buffer layer (not shown) including AlN interposed therebetween. Doped GaN base layer (layer thickness=2 μm) 122, Si-doped n-type GaN contact layer (layer thickness=2 μm, carrier concentration=1×10 19 cm -3 ) 123, Si-doped n-type Al 0.07 Ga 0.93 N c...
experiment example 2-5
[0157] Before the formation of the translucent conductive oxide film layer containing ITO, a translucent conductive oxide film contact layer of about 2 nm was formed, and a gallium nitride-based compound semiconductor light-emitting device was produced in the same manner as in Experimental Example 1.
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