Light emitting diode chip and method for manufacturing the same

A technology of light-emitting diodes and chips, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of high requirements for uniform distribution, high contact resistance of metal electrode layers, and high working voltage, and achieves improved heat transfer performance and current. distribution, the effect of reducing the operating voltage

Active Publication Date: 2008-04-02
APT ELECTRONICS
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Problems solved by technology

Although the manufacturing process of the metal electrode layer on the gallium nitride epitaxial wafer has been widely used in silicon integrated circuit technology, for high-power LEDs, due to the large input current, the device requires a uniform distribution of current on the metal electrode layer. Therefore, there

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  • Light emitting diode chip and method for manufacturing the same
  • Light emitting diode chip and method for manufacturing the same
  • Light emitting diode chip and method for manufacturing the same

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Example Embodiment

[0038] In this embodiment, a GaN-based epitaxial wafer grown on a transparent alumina single crystal (ie, a sapphire substrate) is used to prepare flip-chip LED chips. The process is shown in FIGS. 3a to 3c. For the LED in this embodiment The chip and its manufacturing process are detailed as follows:

[0039] First, a GaN-based epitaxial wafer is grown on a sapphire substrate 1. According to the design pattern and size of the P-type and N-type regions, an etching process is used to form the P-type region 7 and the N-type region 8 required by the design. Shown in Figure 3a. Those skilled in the art can understand that the design graphics conforming to the concept of the present invention can have many variations. For example, seven graphic designs conforming to the concept of the present invention are shown in FIGS. 2a to 2g. The photolithography mask in the etching process can be made according to relevant parameters and design patterns.

[0040] Next, deposit a transparent metal...

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Abstract

The invention discloses a light emitting diode chip and making method thereof, wherein, the chip comprises an external spreading wafer which is formed on a sapphire substrate, an N type zone and a P type zone of the external spreading wafer are covered with a metal electrode layer which comprises a transparent metal layer and a reflection layer and has a metal layer under convex points and metal convex points; a soleplate for flip chip which is provided with a metal line layer and convex points formed on the metal line layer; wherein, the N type zone surrounds the P type zone as large as possible, and the N type zone is communicated with the metal electrode layer covered on the N type zone and P type zone is divided into a plurality of zones by the N type zone and the metal electrode layer. The metal convex points of the P type zone are evenly distributed on a plurality of divided zones. The invention improves the current distribution conditions by optimized design for device electrode so as to improve the performance and life-span of devices. In addition, the flip chip joint point strength on the electrode and thermal conductivity performance of the device are further improved.

Description

technical field [0001] The invention relates to a structural design of a light-emitting diode (LED) chip and a manufacturing method thereof, in particular to a structural design and a manufacturing method of a light-emitting diode chip of a high-power flip-chip welding structure. Background technique [0002] The electrode metal surface of the traditional light-emitting diode (LED) grain faces upward, and is placed and fixed on a base plate. Using a wire-bonding process, the gold wire is soldered on the electrode metal layer of the die and connected to the bottom plate. In order to improve the current distribution and device performance, on the traditional light-emitting diode die, the positive and negative electrode metal layers cover the entire device, and a wire-bonding pad is prepared on this electrode layer for gold wire bonding. Since the light-emitting layer of the light-emitting diode is below the electrode metal layer, part of the emitted light is absorbed by the e...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/36H01L33/62
CPCH01L2224/11H01L2224/16225
Inventor 肖国伟陈正豪
Owner APT ELECTRONICS
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